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    onsemi FDC3535

    MOSFET P-CH 80V 2.1A SUPERSOT6
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    DigiKey FDC3535 Reel 3,000
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    FDC3535 Digi-Reel 1
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    Newark FDC3535 Bulk 1
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    Avnet Silica FDC3535 143 Weeks 6,000
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    EBV Elektronik FDC3535 143 Weeks 3,000
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    Fairchild Semiconductor Corporation FDC3535

    MOSFET P-CH 80V 6-SSOT / Trans MOSFET P-CH 80V 2.1A 6-Pin TSOT-23 T/R
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    Win Source Electronics FDC3535 8,463
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    Fairchild Semiconductor Corporation FDC3535-NL

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    Win Source Electronics FDC3535-NL 7,830
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    FDC3535 Datasheets (1)

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    FDC3535 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 80V 6-SSOT Original PDF

    FDC3535 Datasheets Context Search

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    FDC3535

    Abstract: marking 535
    Text: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description „ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


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    Abstract: No abstract text available
    Text: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description ̈ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


    Original
    PDF