FDC633 Search Results

FDC6331L

Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
Contextual Info: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where

FDC633N marking convention

Contextual Info: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

AN1030

Abstract: FDC6331L 125OC
Contextual Info: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where

125OC

Abstract: FDC6332L SUPERSOT - 3
Contextual Info: FDC6332L Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This Load Switch integrates an N-Channel Power MOSFET that drives Common-Source P-Channels and TM in a small SuperSot –6 package. It uses Fairchild’s

FDC6331L

Abstract: 125OC AN1030 CBVK741B019 F63TNR FDC633N TNR 331 28A zener diode .318 SC70-6
Contextual Info: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V RDS(ON) = 100 mΩ @ VGS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where

scw 52 transistor

Contextual Info: F /\IR G H II_ D March 1998 M IC O N D U C T O R tm FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell

fdc6333c

Abstract: FDC6333C SUPERSOT-6 PACKAGE Supersot 6
Contextual Info: FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

fdc6330l

Abstract: FDC6330
Contextual Info: FDC6330L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power

FDC633N

Abstract: SOIC-16
Contextual Info: FAIRCHILD ìm ic d n d u c t o M arch 1998 - r FDC633N N-Channel Enhancement Mode Field Effect Transistor Features General Description This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

FDC6332L

Contextual Info: FDC6332L Common Source Load Switch P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This Load Switch integrates an N-Channel Power MOSFET that drives Common-Source P-Channels and TM in a small SuperSot –6 package. It uses Fairchild’s

marking 333

Abstract: FDC6333C
Contextual Info: FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

MARKING 333

Contextual Info: FDC6333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

SSOT-6

Abstract: CBVK741B019 F63TNR FDC6330L FDC633N 2180r
Contextual Info: FDC6330L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power

Contextual Info: FDC6333C 30V N & P-Channel PowerTrench MOSFETs Features General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior

125OC

Abstract: AN1030 FDC6331L
Contextual Info: August 2001 FDC6331L Integrated Load Switch Features General Description x –2.8 A, –8 V. RDS ON = 55 m: @ V GS = –4.5 V RDS(ON) = 70 m: @ V GS = –2.5 V RDS(ON) = 100 m:@ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where

zener diode 1.5V

Abstract: 125OC AN1030 FDC6331L
Contextual Info: April 2007 tm FDC6331L Integrated Load Switch Features General Description x –2.8 A, –8 V. RDS ON = 55 m: @ V GS = –4.5 V RDS(ON) = 70 m: @ V GS = –2.5 V RDS(ON) = 100 m:@ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where

Contextual Info: F A I R C H I L D M arch 1998 S E M IC O N D U C T O R tm FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell

FDC633N

Abstract: SOIC-16
Contextual Info: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: FDC6330L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power

Contextual Info: June 1997 FAIRCHILD M IC O N D U C T O R m FDC633N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,

CBVK741B019

Abstract: F63TNR FDC6330L FDC633N
Contextual Info: FDC6330L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 3V to 20V input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power

FDC633N

Abstract: SOIC-16
Contextual Info: March 1998 FDC633N N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Q3 TRANSISTOR

Abstract: FDC633N 4TPE150MI X7R TDK MMBT3904 MAX1954 RLF7030-6R8M2R8 C0603C104M8RAC C0603C681M8RAC
Contextual Info: XENPAK APS power: 5V in 0.9V to 1.8V/0.2A to 1.8A out Schematic Vin 4.5V to 5.5V 0.22uF C1 C2 10uF IN D1 HSD BST Q1 FDC633N DH 0.1uF R1 680pF 130k 0.9V-1.8V/ 0.2A-1.8A 6.8uH APS Power LX Q2 COMP MAX1954 C6 DL To 5Vin 150uF C4 18mOhm FDC633N GND CL Load C5

Contextual Info: FDC6330L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 3V •V DROP V = 0.2V @ V = 12V, I =2.5 A. R = 0.08 Ω IN L ON = 0.2V @ V = 5V,I = 1.6 A. R = 0.125 Ω.