FDD10N20LZ Search Results

FDD10N20LZ Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDD10N20LZTM		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 7.6A DPAK-3	Original	PDF		8

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onsemi FDD10N20LZTM MOSFET N-CH 200V 7.6A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDD10N20LZTM	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	FDD10N20LZTM				1	1 $0.94 10 $0.64 100 $0.39 1000 $0.36 10000 $0.36	Get Quote
Fairchild Semiconductor Corporation FDD10N20LZTM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	FDD10N20LZTM		20		3	1 - 10 $1.88 100 $1.22 1000 $1.22 10000 $1.22	Buy Now
Quest Components	FDD10N20LZTM		16			1 $2.50 10 $2.00 100 $1.25 1000 $1.25 10000 $1.25	Buy Now
Win Source Electronics	FDD10N20LZTM		2,500			1 - 10 - 100 $1.29 1000 $0.86 10000 $0.86	Buy Now

FDD10N20LZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
fdd10n20 Contextual Info: FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 m Features Description • RDS on = 300 m(Typ.) @ VGS = 10 V, ID = 3.8 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.	Original	FDD10N20LZ FDD10N20LZ fdd10n20	PDF
FDD10N20LZ Abstract: 200V 200A mosfet Contextual Info: TM UniFET FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description • RDS on = 0.30( Typ.) @ VGS = 10V, ID = 3.8A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS	Original	FDD10N20LZ FDD10N20LZ 200V 200A mosfet	PDF
Contextual Info: TM UniFET FDD10N20LZ N-Channel MOSFET 200V Logic, 7.6A, 0.36 Features Description • RDS on = 0.30( Typ.) @ VGS = 10V, ID = 3.8A • Low Gate Charge ( Typ.12nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS	Original	FDD10N20LZ	PDF
Contextual Info: FDD10N20LZ N-Channel UniFETTM MOSFET 200 V, 7.6 A, 360 mΩ Features Description • RDS on = 300 mΩ (Typ.) @ VGS = 10 V, ID = 3.8 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to	Original	FDD10N20LZ	PDF