FDFME3N311ZT Search Results
FDFME3N311ZT Price and Stock
Rochester Electronics LLC FDFME3N311ZTSMALL SIGNAL FIELD-EFFECT TRANSI |
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FDFME3N311ZT | Bulk | 15,000 | 993 |
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onsemi FDFME3N311ZTMOSFET N-CH 30V 1.8A 6MICROFET |
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FDFME3N311ZT | Reel |
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FDFME3N311ZT | 15,000 | 1,244 |
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FDFME3N311ZT | 15,000 | 1 |
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FDFME3N311ZT | 143 Weeks | 5,000 |
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FAIRCHILD FDFME3N311ZTFDFME3N311ZT |
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FDFME3N311ZT | 140,000 | 1,244 |
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Fairchild Semiconductor Corporation FDFME3N311ZTSmall Signal Field-Effect Transistor, 1.6A, 30V, N-Channel, MOSFET ' |
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FDFME3N311ZT | 595,451 | 1 |
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FDFME3N311ZT Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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FDFME3N311ZT |
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30V Integrated N-Channel PowerTrench MOSFET and Schottky Diode; 6-MicroFET | Original | 341.12KB | 8 |
FDFME3N311ZT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FDFME3N311ZTContextual Info: FDFME3N311ZT Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ Features General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable |
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FDFME3N311ZT FDFME3N311ZT | |
FDFME3N311ZTContextual Info: FDFME3N311ZT Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30 V, 1.6 A, 299 mΩ Features General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable |
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FDFME3N311ZT FDFME3N311ZT | |
FDFME3N311ZTContextual Info: FDFME3N311ZT Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30 V, 1.6 A, 299 mΩ Features General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable |
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FDFME3N311ZT FDFME3N311ZT | |
FET pair n-channel p-channel
Abstract: microfet FDFME3N311ZT 16X16 FDFMA3N109
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FDFME3N311ZT FDMA6023PZT FDFME3N311ZT FDMA620/8 com/pf/FD/FDFME3N311ZT com/pf/FD/FDMA6023PZT FET pair n-channel p-channel microfet 16X16 FDFMA3N109 | |
Contextual Info: FDFME3N311ZT Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30 V, 1.8 A, 299 mΩ Features General Description This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable |
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FDFME3N311ZT | |
FSA642
Abstract: FDMA1024NZ diagram circuit usb mp3 player with radio fm lcd CFL inverter circuit schematic diagram FAN5646 FDC610PZ block diagram 3x3 matrix keypad and microcontroller FDC658AP CFL 12v inverter circuit schematic diagram free pwm DC-DC SC70-5
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led backlight
Abstract: tablet display backlight
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Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com |
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AS3676 AS3676 AS3675, AS3687/87XM AS3689 AS3675. com/AS3676 |