FDMC86160 Search Results
FDMC86160 Price and Stock
onsemi FDMC86160ET100MOSFET N-CH 100V 9A/43A POWER33 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMC86160ET100 | Cut Tape | 8,592 | 1 |
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FDMC86160ET100 | Reel | 11 Weeks | 3,000 |
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FDMC86160ET100 | 2,979 |
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FDMC86160ET100 | 3,000 | 3,000 |
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FDMC86160ET100 | Cut Tape | 900 | 1 |
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FDMC86160ET100 | 1 |
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FDMC86160ET100 | 3,000 |
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FDMC86160ET100 | 12 Weeks | 3,000 |
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FDMC86160ET100 | 13 Weeks | 3,000 |
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FDMC86160ET100 | 18,000 |
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FDMC86160ET100 | 1,750 | 1 |
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onsemi FDMC86160MOSFET N CH 100V 9A POWER33 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMC86160 | Cut Tape | 3,055 | 1 |
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FDMC86160 | Reel | 9 Weeks | 3,000 |
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FDMC86160 | 45,684 |
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FDMC86160 | 19,224 | 221 |
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FDMC86160 | 3,000 | 9 Weeks | 3,000 |
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FDMC86160 | Reel | 3,000 |
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FDMC86160 | Reel | 3,000 | 11 Weeks | 3,000 |
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FDMC86160 | 3,000 |
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FDMC86160 | 484 | 3 |
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FDMC86160 | 387 |
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FDMC86160 | 22,349 | 1 |
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FDMC86160 | 1 |
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FDMC86160 | 3,000 |
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FDMC86160 | 9 Weeks | 3,000 |
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FDMC86160 | 10 Weeks | 3,000 |
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FDMC86160 | Cut Tape | 2,796 | 0 Weeks, 1 Days | 1 |
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FDMC86160 | 11 Weeks | 3,000 |
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FDMC86160 | 9,000 |
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FDMC86160 | 3,000 |
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FDMC86160 | 6,000 | 1 |
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FDMC86160 | 25,000 |
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FDMC86160 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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FDMC86160 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 100V 9A POWER33 | Original | 7 | ||||
FDMC86160ET100 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 9A POWER33 | Original | 341.74KB |
FDMC86160 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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2326SContextual Info: FDMC86160 N-Channel Power Trench MOSFET 100 V, 43 A, 14 mΩ Features General Description Max rDS on = 14 mΩ at VGS = 10 V, ID = 9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This |
Original |
FDMC86160 FDMC86160 2326S | |
Contextual Info: FDMC86160 N-Channel Power Trench MOSFET 100 V, 43 A, 14 mΩ Features General Description ̈ Max rDS on = 14 mΩ at VGS = 10 V, ID = 9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This |
Original |
FDMC86160 | |
2326SContextual Info: FDMC86160 N-Channel Power Trench MOSFET 100 V, 43 A, 14 mΩ Features General Description Max rDS on = 14 mΩ at VGS = 10 V, ID = 9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This |
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FDMC86160 FDMC86160 2326S | |
Contextual Info: FDMC86160 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been |
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FDMC86160 FDMC86160 |