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    FDN338P Price and Stock

    onsemi FDN338P

    MOSFET P-CH 20V 1.6A SUPERSOT3
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    DigiKey FDN338P Digi-Reel 51,795 1
    • 1 $0.51
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    FDN338P Cut Tape 51,795 1
    • 1 $0.51
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    FDN338P Reel 51,000 3,000
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    Avnet Americas FDN338P Reel 435,000 9 Weeks 3,000
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    FDN338P Reel 6,000
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    FDN338P Reel 9 Weeks 6,000
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    FDN338P Reel 6,000
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    Mouser Electronics FDN338P 111,756
    • 1 $0.49
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    Verical FDN338P 48,000 3,000
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    FDN338P 6,000 3,000
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    FDN338P 264 49
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    Arrow Electronics FDN338P 72,000 9 Weeks 3,000
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    FDN338P 6,000 9 Weeks 3,000
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    FDN338P Cut Strips 264 9 Weeks 1
    • 1 $0.281
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    Newark FDN338P Reel 432,000 3,000
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    FDN338P Cut Tape 23,581 5
    • 1 $0.437
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    FDN338P Reel 6,000 3,000
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    Future Electronics FDN338P Reel 594,000 21 Weeks 3,000
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    FDN338P Reel 102,000 21 Weeks 3,000
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    FDN338P Reel 21 Weeks 9,000
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    Onlinecomponents.com FDN338P 48,000
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    Bristol Electronics FDN338P 3,000
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    FDN338P 535 7
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    FDN338P 110
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    Quest Components FDN338P 2,400
    • 1 $0.893
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    FDN338P 428
    • 1 $1
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    FDN338P 331
    • 1 $1
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    TME FDN338P 5,950 1
    • 1 $0.451
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    • 100 $0.213
    • 1000 $0.194
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    Ameya Holding Limited FDN338P 18,000
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    Richardson RFPD FDN338P 6,000
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    Chip 1 Exchange FDN338P 2,157
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    Avnet Asia FDN338P 9 Weeks 9,000
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    Avnet Silica FDN338P 21,000 10 Weeks 3,000
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    EBV Elektronik FDN338P 11 Weeks 3,000
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    Master Electronics FDN338P 48,000
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    New Advantage Corporation FDN338P 687,000 1
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    UMW FDN338P

    20V 1.6A 500MW 115MR@4.5V,1.6A 1
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    DigiKey FDN338P Cut Tape 4,750 1
    • 1 $0.32
    • 10 $0.32
    • 100 $0.1994
    • 1000 $0.15789
    • 10000 $0.15789
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    FDN338P Digi-Reel 4,750 1
    • 1 $0.32
    • 10 $0.32
    • 100 $0.1994
    • 1000 $0.15789
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    FDN338P Reel 3,000 3,000
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    EVVO Semiconductor FDN338P-EV

    MOSFET P-CH 20V 1.6A SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDN338P-EV Reel 3,000 3,000
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    • 10000 $0.12785
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    FDN338P-EV Digi-Reel 3,000 1
    • 1 $0.46
    • 10 $0.309
    • 100 $0.46
    • 1000 $0.14762
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    FDN338P-EV Cut Tape 3,000 1
    • 1 $0.46
    • 10 $0.309
    • 100 $0.46
    • 1000 $0.14762
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    onsemi FDN338P_G

    MOSFET P-CH 20V 1.6A SUPERSOT3
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    DigiKey FDN338P_G Bulk
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    MOSLEADER FDN338P-NL-ML

    P-Channel -20V -1.6A SOT-23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDN338P-NL-ML Reel 200
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    • 1000 $0.03416
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    Find more FDN338P price and stock on Findchips.com

    FDN338P Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDN338P Fairchild Semiconductor P-Channel 2.5V Specified PowerTrench MOSFET Original PDF
    FDN338P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    FDN338P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    FDN338P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDN338P Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    FDN338P_NL Fairchild Semiconductor P-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF

    FDN338P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDN338P

    Abstract: 187M
    Text: FDN338P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.4 A, –20 V.


    Original     		PDF FDN338P FDN338P 187M

    Untitled

    Abstract: No abstract text available
    Text: FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.6 A, –20 V. RDS ON = 115 mΩ @ V GS = –4.5 V


    Original     		PDF FDN338P

    FDN338P

    Abstract: SOIC-16
    Text: December 1997 PRELIMINARY FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDN338P FDN338P SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: FDN338P 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS ON , Vgs@-4.5V, Ids@-1.6A= 115m Ω RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23(PACKAGE)


    Original     		PDF FDN338P OT-23

    Untitled

    Abstract: No abstract text available
    Text: March 1998 FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDN338P OT-23

    iss-400 diode

    Abstract: FDN338P SOIC-16
    Text: March 1998 FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDN338P FDN338P iss-400 diode SOIC-16

    FDN338P T R

    Abstract: No abstract text available
    Text: FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.6 A, –20 V. RDS ON = 115 mΩ @ V GS = –4.5 V


    Original     		PDF FDN338P FDN338P T R

    FDN338P

    Abstract: No abstract text available
    Text: FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.6 A, –20 V. RDS ON = 115 mΩ @ V GS = –4.5 V


    Original     		PDF FDN338P FDN338P

    FDN338P

    Abstract: marking code 10 sot23 CBVK741B019 F63TNR MMSZ5221B on SEMICONDUCTOR MARKING FDN338P T R
    Text: FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.6 A, –20 V. RDS ON = 115 mΩ @ V GS = –4.5 V


    Original     		PDF FDN338P FDN338P marking code 10 sot23 CBVK741B019 F63TNR MMSZ5221B on SEMICONDUCTOR MARKING FDN338P T R

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    OV7690 vga camera module

    Abstract: OV7690 software application note XILINX ft2232 usb jtag OV7690 K350QVG-V1-F VGA ov7690 S29GL064N90TFI04 S29GL064N90TFI XILINX ft2232 schematic diagram of ip camera
    Text: Stellaris LM3S9B96 Development Kit User ’s Manual DK-LM3S9B96 -05 Co pyrigh t 2 009– 201 0 Te xas In strumen ts Copyright Copyright © 2009–2010 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.


    Original     		PDF LM3S9B96 DK-LM3S9B96 OV7690 vga camera module OV7690 software application note XILINX ft2232 usb jtag OV7690 K350QVG-V1-F VGA ov7690 S29GL064N90TFI04 S29GL064N90TFI XILINX ft2232 schematic diagram of ip camera

    5401 DM smd transistor

    Abstract: 5401 DM 5401 DM transistor High Speed CAN Transceiver IC Philips Siliconix Handbook ISP1123 ISP1123BD ISP1123D ISP1123NB LQFP32
    Text: ISP1123 Universal Serial Bus compound hub Rev. 01 — 5 October 1999 Preliminary specification 1. General description The ISP1123 is a compound Universal Serial Bus USB hub device which complies with USB Specification Rev. 1.1. It integrates a Serial Interface Engine (SIE), hub


    Original     		PDF ISP1123 ISP1123 5401 DM smd transistor 5401 DM 5401 DM transistor High Speed CAN Transceiver IC Philips Siliconix Handbook ISP1123BD ISP1123D ISP1123NB LQFP32

    dell motherboard schematic

    Abstract: c2383 equivalent pinout dell battery LA-1221 D3014 C5440 C3679 equivalent c840 dell boe bot schematic diagram SK c3679
    Text: A B C D REV VRM CLOCK CK-408 NORTHWOOD PAGE_36,39,40,41 PAGE_3 1 BATTERY A CONNECTOR VCORE CK-TITAN (56 pin TSSOP) PAGE_37 PAGE_36 478 pin +5VSUS PAGE_6 +3.3VALW +5VALW +12V +5VRUN 11/15/02 PAGE_20 PAGE_20 AC97 MODEM CONNECTOR PAGE_22 I2S DOCK INTERFACE


    Original     		PDF A00-00 CK-408 100MHZ 400MT/S LA-1221 dell motherboard schematic c2383 equivalent pinout dell battery LA-1221 D3014 C5440 C3679 equivalent c840 dell boe bot schematic diagram SK c3679

    6JK3

    Abstract: BC733 bc735 usb common mode choke BC380 BC628 MMDR BC148 pin configuration BC702 Wistron Corporation
    Text: A B C D E D H2 BLOCK DIAGRAMVER.-4 Project Code 4 4,5 3 ICS 94239 M/B D/D LAUNCH CDROM IR 2ND HDD DESKTOP CPU For ENG Willamette For M/P Northwood CLK GEN 6 0.18u 1.3G~1.8G G768D 0.13u 2.0G~2.4G 500mA; 600mA 15 7,8 9,10,11 3 2002/06/06 DDR*2 MCH 15 ATI P6


    Original     		PDF 42Z01 01384-SA ADP3203 150mA G768D 500mA; 600mA 41T01 41T02 41T03 6JK3 BC733 bc735 usb common mode choke BC380 BC628 MMDR BC148 pin configuration BC702 Wistron Corporation

    LPC47N250

    Abstract: max1532 PR317 SiI1362 Maxim MAX1908 alviso-GM U15i Socket AM2 1u040 docking cradle smsc
    Text: A B C D E 1 1 Compal confidential 2 2 Schematics Document Mobile Dothan uFCBGA/uFCPGA with Intel Alviso_GM+ICH6-M core logic 2004-09-09 3 3 REV:06 4 4 Title Compal Electronics, Inc. Cover Sheet THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINSSize


    Original     		PDF ADM1032 ADM1032 MAX6646) LA-2211 LPC47N250 max1532 PR317 SiI1362 Maxim MAX1908 alviso-GM U15i Socket AM2 1u040 docking cradle smsc

    xd card reader

    Abstract: SC22P50V2JN-4GP SCD1U10V2KX-4GP SCD1U10V2KX FDN338P-NL-GP AAT4250IGV-T1-GP 36P1 I0044 C9-R21 SDcd
    Text: 4 3 2 PCB P/N REVISION +3VRUN_CARD CARD READER :07517 : SB 2 +3VRUN_CARD 2 C3 SCD1U10V2KX-4GP 1 C4 SCD1U10V2KX-4GP 2 1 +3VRUN_CARD D U1 1 1 5 C5 SC2D2U6D3V3MX-1-GP D CARD1 3D3V_S0 +3VRUN_CARD 5 DY AAT4250IGV-T1-GP DY 2 74.04250.A3F 2 C6 SC1U6D3V2ZY-GP CARD_EN


    Original     		PDF 20mil SCD1U10V2KX-4GP SW-CONN12A-2-GP SC22P50V2JN-4GP 39R2J-L-GP 4T901 xd card reader SC22P50V2JN-4GP SCD1U10V2KX-4GP SCD1U10V2KX FDN338P-NL-GP AAT4250IGV-T1-GP 36P1 I0044 C9-R21 SDcd

    sil1364

    Abstract: PZ4782K am4825p ITE8512F fds8884 G784P81U IT8305E G545B1P8U Inventec M11D Santa Rosa
    Text: 5 4 3 2 1 D D Inventec Corporation R&D Division C C Board name : Mother Board Schematic Project : M11D Santa Rosa Version : 0.1 Initial Date : March 22 , 2007 B B A A Inventec Corporation <OrgAddr4> Inventec Buliding,66 Hou-Kang Stree Shin-Lin District, Taipei 111, Taiwan


    Original     		PDF 120ohm 200mA 15ohm 20mil 10mil sil1364 PZ4782K am4825p ITE8512F fds8884 G784P81U IT8305E G545B1P8U Inventec M11D Santa Rosa

    SN0608098

    Abstract: schematic lcd inverter dell BQ70a EMC4002 LA-4041P B30 C350 mec5035 ECE5028 5 pin vga camera pinout suyin sn060809
    Text: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : JAL20 PCB NO : LA-4041P DA800009Y1L BOM NO : 43153231L01(TPM) 43153231L02 (Non TPM) 1 M09 Maybach UMA uFCPGA Mobile Penryn Intel Cantiga GM + ICH9M 2 2 2008-06-16 REV : 1.0(A00) @ : Nopop Component 3@ : disable TPM


    Original     		PDF JAL20 LA-4041P DA800009Y1L) 43153231L01 43153231L02 DA800009Y1L LA-4041P SD03415830L SD03415838L ADP3209 SN0608098 schematic lcd inverter dell BQ70a EMC4002 B30 C350 mec5035 ECE5028 5 pin vga camera pinout suyin sn060809

    78u30

    Abstract: oz9981 temic 0675 c9 temic 0675 d4 BC555 oz9983 oz99 temic 0675 d6 BC148 pin configuration foxconn
    Text: Jan. 11 2002 C-Note 2 Block Diagram Mobile CPU 3 HOST BUS LCD 13 CH70011 Almador-M 133MHz 10 12 To P.R. 7,8,9 MIC IN AC'97 CODEC HUB I/F . X I 66MHz AD1881A 24 PCI BUS Line Out OP AMP CARDBUS PWR SW TI 1410A TPS2211A AC-Link O C 11 DVO BUS / 66MHz GMCH Final version


    Original     		PDF 133MHz CH70011 133MHz 66MHz AD1881A 66MHz TPA0202 TSB43AB21 TPS2211A 47R27 78u30 oz9981 temic 0675 c9 temic 0675 d4 BC555 oz9983 oz99 temic 0675 d6 BC148 pin configuration foxconn

    FDN338P

    Abstract: SOIC-16 FDN338P T R
    Text: March 1998 FAIRCHILD ì m ic o n d u c t o r FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF FDN338P FDN338P SOIC-16 FDN338P T R

    Untitled

    Abstract: No abstract text available
    Text: March 1998 F/\IRCHII_ID M ICDNDUCTO R tm FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's


    OCR Scan     		PDF FDN338P FDN338P

    Untitled

    Abstract: No abstract text available
    Text: ^ ¡ 2 s e m ic £ S ü n d u ! t E S tS June 1997 r a d v a n c e in f o r m a t i o n FDN338P P-ChannelLogic Level Enhancement Mode Field Effect Transistor G eneral Description Features SuperSOT™ -3 P-Channel logic level enhancem ent mode pow er field effect transistors are produced using F a irc h ild 's


    OCR Scan     		PDF FDN338P FDN338PR

    Untitled

    Abstract: No abstract text available
    Text: March 1998 F A I R C H I L D SEM ICONDUCTO R T M FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features SuperS Q T -3 P -C hannel logic level en hancem ent m ode po w e r field effe ct transistors are produced using Fairchild's


    OCR Scan     		PDF FDN338P

    Untitled

    Abstract: No abstract text available
    Text: 400mA SmartLDO jpf'jsEIX/ITEOH TM SC1534 Today’s Results.Tor PRELIMINARY - September 3, 1999 T E L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SC1534 is designed to maintain a glitch-free 3.3V output when at least one of two inputs, 5V VIN and


    OCR Scan     		PDF 400mA SC1534 L805-498-2111 SC1534 O-263,