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    FDP030N06B Search Results

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    FDP030N06B Price and Stock

    Rochester Electronics LLC FDP030N06B

    1-ELEMENT, N-CHANNEL, MOS FET
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    DigiKey FDP030N06B Bulk 800 185
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    onsemi FDP030N06B-F102

    MOSFET N-CH 60V 120A TO220-3
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    DigiKey FDP030N06B-F102 Tube 679 1
    • 1 $3.11
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    Avnet Americas FDP030N06B-F102 Tube 4 Weeks 1
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    FDP030N06B-F102 Tube 17 Weeks 800
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    Mouser Electronics FDP030N06B-F102 421
    • 1 $2.55
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    Newark FDP030N06B-F102 Bulk 800
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    Onlinecomponents.com FDP030N06B-F102
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    Rochester Electronics FDP030N06B-F102 100 1
    • 1 $1.17
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    • 100 $1.1
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    Ameya Holding Limited FDP030N06B-F102 784
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    Richardson RFPD FDP030N06B-F102 800
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    Avnet Silica FDP030N06B-F102 18 Weeks 50
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    Chip1Stop FDP030N06B-F102 3,800
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    FDP030N06B-F102 684
    • 1 $7.72
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    EBV Elektronik FDP030N06B-F102 19 Weeks 50
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    Wuhan P&S FDP030N06B-F102 684 1
    • 1 $2.81
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    • 100 $1.8
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    onsemi FDP030N06B

    MOSFET N-CH 60V 120A TO220 - Bulk (Alt: FDP030N06B)
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    Avnet Americas FDP030N06B Bulk 4 Weeks 224
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    Fairchild Semiconductor Corporation FDP030N06B

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    Bristol Electronics FDP030N06B 515
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    Rochester Electronics FDP030N06B 800 1
    • 1 $1.64
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    • 100 $1.54
    • 1000 $1.39
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    FDP030N06B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDP030N06B_F102 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 120A TO-220-3 Original PDF
    FDP030N06B-F102 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO-220-3 Original PDF

    FDP030N06B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FDP030N06B_F102 N-Channel PowerTrench MOSFET 60 V, 195 A, 3.1 mΩ Features Description • RDS on = 2.67 mΩ (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: FDP030N06B_F102 N-Channel PowerTrench MOSFET 60V, 195A, 3.1mΩ Features Description • RDS on = 2.67mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored


    Original     		PDF

    FDP030N06B

    Abstract: No abstract text available
    Text: FDP030N06B_F102 N-Channel PowerTrench MOSFET 60 V, 195 A, 3.1 mΩ Features Description • RDS on = 2.67 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF