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    FDP12 Price and Stock

    Rochester Electronics LLC FDP120AN15A0

    MOSFET N-CH 150V 2.8A/14A TO220
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    DigiKey FDP120AN15A0 Tube 9,998 251
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    onsemi FDP120N10

    MOSFET N-CH 100V 74A TO220-3
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    DigiKey FDP120N10 Tube 206 1
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    Avnet Americas FDP120N10 Tube 9 Weeks 800
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    • 10000 $0.9984
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    Mouser Electronics FDP120N10 432
    • 1 $2.92
    • 10 $2.46
    • 100 $1.43
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    Verical FDP120N10 800 213
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    Newark FDP120N10 Bulk 800
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    Onlinecomponents.com FDP120N10
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    Rochester Electronics FDP120N10 843 1
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    Richardson RFPD FDP120N10 800
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    Avnet Silica FDP120N10 1,600 10 Weeks 50
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    EBV Elektronik FDP120N10 200 11 Weeks 50
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    New Advantage Corporation FDP120N10 150 1
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    onsemi FDP12N50

    MOSFET N-CH 500V 11.5A TO220-3
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    DigiKey FDP12N50 Tube 1,000
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    Verical FDP12N50 672 240
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    Rochester Electronics FDP12N50 672 1
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    onsemi FDP12N50NZ

    MOSFET N-CH 500V 11.5A TO220-3
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    DigiKey () FDP12N50NZ Tube
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    Newark FDP12N50NZ Bulk 1
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    onsemi FDP12N60NZ

    MOSFET N-CH 600V 12A TO220-3
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    Flip Electronics FDP12N60NZ 1
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    FDP12 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    FDP120AN15A0
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 14A TO-220AB Original PDF 12
    FDP120AN15A0
    		Fairchild Semiconductor Original PDF 189.5KB 11
    FDP120N10
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 74A TO-220 Original PDF 8
    FDP12N35
    		Fairchild Semiconductor 350V N-Channel MOSFET Original PDF 375.88KB 10
    FDP12N50
    		Fairchild Semiconductor N-Channel MOSFET 500V, 11.5A, 0.65 Ohm Original PDF 343.29KB 10
    FDP12N50F
    		Fairchild Semiconductor N-Channel MOSFET 500V, 11.5A, 0.7 Ohm Original PDF 663.38KB 10
    FDP12N50NZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11.5A TO-220 Original PDF 10
    FDP12N60NZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 12A TO-220 Original PDF 10

    FDP12 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDPF12N50T

    Abstract: FDP12N50
    Contextual Info: UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS on = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP12N50 FDPF12N50T FDPF12N50T PDF

    Contextual Info: UniFETTM FDP12N50F / FDPF12N50F tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDP12N50F FDPF12N50F FDPF12N50F PDF

    Contextual Info: WAVEGUIDE DUMMY LOAD Waveguide Low Power Load P/N Freq. Range GHz Waveguide Power Handling (W) VSWR Flange Material 975LPLW 0.75-1.12 WR975 2 1.05 FDP9/FDM9 Al 770LPLW 0.96-1.45 WR770 2 1.05 FDP12/FDM12 Al 650LPLW 1.12-1.70 WR650 2 1.05 FDP14/FDM14 Al 510LPLW


    Original     		975LPLW WR975 770LPLW WR770 FDP12/FDM12 650LPLW WR650 FDP14/FDM14 510LPLW WR510 PDF

    FDPF*12n50ut

    Abstract: FDPF12N50UT
    Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDP12N50U FDPF12N50UT FDPF12N50UT FDPF*12n50ut PDF

    Contextual Info: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDP12N50U FDPF12N50UT PDF

    Contextual Info: UniFET-IITM FDP12N50NZ / FDPF12N50NZ tm N-Channel MOSFET 500V, 11.5A, 0.52 Features Description • RDS on = 0.46 ( Typ. ) @ VGS = 10V, ID = 5.75A These N- Channel enhancement mode power field ef fect transistors are pr oduced using Fa irchild’s pr oprietary, planar


    Original     		FDP12N50NZ FDPF12N50NZ FDPF12N50NZ PDF

    Contextual Info: FDP120N10 N-Channel PowerTrench MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS on = 9.7 mΩ ( Typ.)@ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDP120N10 PDF

    fdp12n50nz

    Abstract: fdpf12n50nz
    Contextual Info: FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m Features Description • RDS on = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		FDP12N50NZ FDPF12N50NZ FDPF12N50NZ PDF

    fdpf12n60

    Abstract: FDP12N60NZ
    Contextual Info: UniFET-II TM FDP12N60NZ / FDPF12N60NZ N-Channel MOSFET 600V, 12A, 0.65 Features Description • RDS on = 0.53 ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 26nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDP12N60NZ FDPF12N60NZ fdpf12n60 PDF

    FDP120N10

    Contextual Info: FDP120N10 N-Channel PowerTrench 100V, 74A, 12mΩ tm MOSFET Features Description • RDS on = 9.7mΩ ( Typ.)@ VGS = 10V, ID = 74A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP120N10 O-220 FDP120N10 PDF

    350v mosfet nchannel

    Abstract: FDP12N35 FDPF12N35
    Contextual Info: UniFET TM FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 12A, 350V, RDS on = 0.38Ω @VGS = 10 V


    Original     		FDP12N35 FDPF12N35 O-220 FDPF12N35 350v mosfet nchannel PDF

    FDPF12N50NZ

    Abstract: FDP12N50NZ
    Contextual Info: UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52Ω Features Description • RDS on = 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP12N50NZ FDPF12N50NZ FDPF12N50NZ PDF

    Contextual Info: UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDP12N50F FDPF12N50FT FDPF12N50FT PDF

    Contextual Info: UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS on = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP12N50 FDPF12N50T PDF

    Contextual Info: FDP120N10 N-Channel PowerTrench MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS on = 9.7 mΩ ( Typ.)@ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDP120N10 PDF

    FDPF12N60NZ

    Abstract: fdpf12n60 FDP12N60NZ FDP12N60 12a650
    Contextual Info: FDP12N60NZ / FDPF12N60NZ N-Channel UniFETTM II MOSFET 600 V, 12 A, 650 m Features Description • RDS on = 530 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		FDP12N60NZ FDPF12N60NZ FDPF12N60NZ fdpf12n60 FDP12N60 12a650 PDF

    FDP120N10

    Contextual Info: FDP120N10 N-Channel PowerTrench MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS on = 9.7 mΩ ( Typ.)@ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDP120N10 FDP120N10 PDF

    Contextual Info: UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52Ω Features Description • RDS on = 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A • Low gate charge ( Typ. 23nC ) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		FDP12N50NZ FDPF12N50NZ PDF

    Contextual Info: FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m Features Description • RDS on = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		FDP12N50NZ FDPF12N50NZ PDF

    Contextual Info: STRAIGHT WAVEGUIDE 0. 75GH z – 100GH z 975STW-500 Freq. Range GHz 0.75-1.12 770STW-500 0.96-1.45 WR770 1.05 500 FDP12/ FDM12 Al Al 650STW-500 1.12-1.70 WR650 1.05 500 FDP14/ FDM14 Al 510STW-500 1.45-2.20 WR510 1.05 500 FDP18/ FDM18 Al 430STW-500 1.70-2.60


    Original     		100GH 975STW-500 770STW-500 WR770 FDP12/ FDM12 650STW-500 WR650 FDP14/ FDM14 PDF

    Contextual Info: FDP120N10 N-Channel PowerTrench MOSFET 100 V, 74 A, 12 mΩ Features Description • RDS on = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDP120N10 PDF

    Contextual Info: FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 mΩ Features Description • RDS on = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		FDP12N50 FDPF12N50T PDF

    Contextual Info: UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		FDP12N50F FDPF12N50FT FDPF12N50FT PDF

    FDP120AN15A0

    Abstract: FDD120AN15A0 marking 2E9 marking m062
    Contextual Info: FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench MOSFET 150V, 14A, 120mΩ Features Applications • r DS ON = 101mΩ (Typ.), VGS = 10V, ID = 4A • DC/DC Converters and Off-line UPS • Qg(tot) = 11.2nC (Typ.), V GS = 10V • Distributed Power Architectures and VRMs


    Original     		FDP120AN15A0 FDD120AN15A0 O-252AA FDD120AN15A0 marking 2E9 marking m062 PDF