FDPF190N15A Search Results
FDPF190N15A Price and Stock
onsemi FDPF190N15ATrans MOSFET N-CH 150V 27.4A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FDPF190N15A) |
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FDPF190N15A | Tube | 11 Weeks | 1,000 |
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FDPF190N15A | 6,130 |
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FDPF190N15A | Bulk | 981 | 1 |
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FDPF190N15A |
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FDPF190N15A | 1 |
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FDPF190N15A | 1,000 |
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FDPF190N15A | 12 Weeks | 50 |
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FDPF190N15A | 5,800 | 13 Weeks | 50 |
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FDPF190N15A | 2,000 |
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FDPF190N15A | 1,000 |
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FDPF190N15A | 4,650 | 1 |
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onsemi VESFDPF190N15ATrans MOSFET NCH 150V 274A 3Pin3Tab TO220F Rail (Alt: FDPF190N15A) |
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VESFDPF190N15A | 21 Weeks | 50 |
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Fairchild Semiconductor Corporation FDPF190N15ATransistors |
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FDPF190N15A | 1,251 |
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FDPF190N15A Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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FDPF190N15A |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 27.4A TO-220F | Original |
FDPF190N15A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDPF190N15A N-Channel PowerTrench MOSFET 150 V, 27.4 A, 19 mΩ Features Description • RDS on = 14.7 mΩ (Typ.) @ VGS = 10 V, ID = 27.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining |
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FDPF190N15A O-220F | |
Contextual Info: FDPF190N15A N-Channel PowerTrench MOSFET 150V, 27.4A, 19mΩ Features Description • RDS on = 14.7mΩ ( Typ.)@ VGS = 10V, ID = 27.4A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDPF190N15A FDPF190N15A O-220efinition | |
Contextual Info: FDPF190N15A N-Channel PowerTrench MOSFET 150V, 27.4A, 19mΩ Features Description • RDS on = 14.7mΩ ( Typ.)@ VGS = 10V, ID = 27.4A • Low Gate Charge ( Typ. 30nC) • Low Crss ( Typ. 56pF) This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been |
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FDPF190N15A | |
FDPF190N15AContextual Info: FDPF190N15A N-Channel PowerTrench MOSFET 150 V, 27.4 A, 19 mΩ Features Description • RDS on = 14.7 mΩ ( Typ.)@ VGS = 10 V, ID = 27.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
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FDPF190N15A FDPF190N15A O-220F |