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    FDS9412 Price and Stock

    onsemi FDS9412

    MOSFET N-CH 30V 7.9A 8SOIC
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    DigiKey FDS9412 Reel
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    Rochester Electronics LLC FDS9412

    MOSFET N-CH 30V 7.9A 8SOIC
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    DigiKey FDS9412 Bulk 1,110
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    onsemi FDS9412A

    MOSFET N-CH 30V 8A 8SOIC
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    DigiKey FDS9412A Reel
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    Fairchild Semiconductor Corporation FDS9412A

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    Bristol Electronics FDS9412A 40
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    Fairchild Semiconductor Corporation FDS9412

    7900 MA, 30 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET
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    Quest Components FDS9412 6,158
    • 1 $0.5223
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    FDS9412 3,840
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    Rochester Electronics FDS9412 116,238 1
    • 1 $0.26
    • 10 $0.26
    • 100 $0.2444
    • 1000 $0.221
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    Win Source Electronics FDS9412 30,000
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    Find more FDS9412 price and stock on Findchips.com

    FDS9412 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDS9412 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDS9412 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDS9412 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Tra Original PDF
    FDS9412 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDS9412 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDS9412 Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    FDS9412A Fairchild Semiconductor 30V N-Channel PowerTrench MOSFET Original PDF
    FDS9412_NL Fairchild Semiconductor Single N-Channel Enhancement Mode Field Effect Transistor Original PDF

    FDS9412 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS9412 FDS9953A L86Z
    Text: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDS9412 CBVK741B019 F011 F63TNR F852 FDS9412 FDS9953A L86Z

    FDS9412A

    Abstract: No abstract text available
    Text: FDS9412A N-Channel PowerTrench MOSFET 30V, 8A, 21mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switiching PWM controllers. It has been optimized for low gate charge ,low


    Original     		PDF FDS9412A FDS9412A

    Untitled

    Abstract: No abstract text available
    Text: November 1997 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDS9412

    gs 9412

    Abstract: F011 F63TNR F852 FDS9412 L86Z SOIC-16 D1294
    Text: November 1997 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF FDS9412 gs 9412 F011 F63TNR F852 FDS9412 L86Z SOIC-16 D1294

    FDS9412

    Abstract: No abstract text available
    Text: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDS9412 FDS9412

    Untitled

    Abstract: No abstract text available
    Text: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDS9412

    FDS9412

    Abstract: gs 9412 SOIC-16
    Text: November 1997 FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF FDS9412 FDS9412 gs 9412 SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		PDF FDS9412

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    RG82845MP

    Abstract: 103KT2125-1P R53 thermistor compal rf switch s195 EPCOS T251 RG82845M LPC47N254 x71 sot23 mm74hct32m
    Text: 5 4 3 2 1 D D Lindbergh Schematic C C uFCPGA Northwood 2003-03-10 Rev:A01 B B A A Compal Electronics, Inc. Title Cover Sheet Size Document Number Rev A01 ADQ00/LA-1351 Date: 5 4 3 2 Monday,March10,2003 1 Sheet 1 of 52 5 4 3 2 Compal confidential 1 Block Diagram


    Original     		PDF ADQ00/LA-1351 March10 ADM1032 ADQ00 400MHz NV28/ATI 266MHz PC2100 PR612 B540C RG82845MP 103KT2125-1P R53 thermistor compal rf switch s195 EPCOS T251 RG82845M LPC47N254 x71 sot23 mm74hct32m

    sis 962l

    Abstract: 301LV 93lc468 SIS 740 sc728 RT8110 sis962l CMI9739A lc949 CMI9739
    Text: 5 4 3 2 1 Power Now Clock Gen. PAGE 5 AMD Mobile Duron CPU RTC,VCC3,VCC5 PAGE 10 Sideband Bus SYSTEM POWER PAGE 22 PAGE 38 Thermal D D PAGE 2,3,4 Clock Buffer CHARGER &SELECTOR PAGE 11 PAGE 34 S2K Bus CRT North Bridge PAGE 15 BAT.LOW&OVER.T Memory Bus SiS 740


    Original     		PDF MAX1858 301LV MAX1711 ITE8705 ENE3886 LM393 1SS355 LM393 25C--> 55C--> sis 962l 93lc468 SIS 740 sc728 RT8110 sis962l CMI9739A lc949 CMI9739

    dell motherboard schematic

    Abstract: c2383 equivalent pinout dell battery LA-1221 D3014 C5440 C3679 equivalent c840 dell boe bot schematic diagram SK c3679
    Text: A B C D REV VRM CLOCK CK-408 NORTHWOOD PAGE_36,39,40,41 PAGE_3 1 BATTERY A CONNECTOR VCORE CK-TITAN (56 pin TSSOP) PAGE_37 PAGE_36 478 pin +5VSUS PAGE_6 +3.3VALW +5VALW +12V +5VRUN 11/15/02 PAGE_20 PAGE_20 AC97 MODEM CONNECTOR PAGE_22 I2S DOCK INTERFACE


    Original     		PDF A00-00 CK-408 100MHZ 400MT/S LA-1221 dell motherboard schematic c2383 equivalent pinout dell battery LA-1221 D3014 C5440 C3679 equivalent c840 dell boe bot schematic diagram SK c3679

    6JK3

    Abstract: BC733 bc735 usb common mode choke BC380 BC628 MMDR BC148 pin configuration BC702 Wistron Corporation
    Text: A B C D E D H2 BLOCK DIAGRAMVER.-4 Project Code 4 4,5 3 ICS 94239 M/B D/D LAUNCH CDROM IR 2ND HDD DESKTOP CPU For ENG Willamette For M/P Northwood CLK GEN 6 0.18u 1.3G~1.8G G768D 0.13u 2.0G~2.4G 500mA; 600mA 15 7,8 9,10,11 3 2002/06/06 DDR*2 MCH 15 ATI P6


    Original     		PDF 42Z01 01384-SA ADP3203 150mA G768D 500mA; 600mA 41T01 41T02 41T03 6JK3 BC733 bc735 usb common mode choke BC380 BC628 MMDR BC148 pin configuration BC702 Wistron Corporation

    fet B20 p03

    Abstract: u7620 DCD-1530 BC148 pin configuration wistron docking foxconn WISTRON power sequence FW82807A Wistron Corporation SC 3062
    Text: ÌÓíêð Ð ±¶»½¬ ½±¼»æ çïòìëÍðïòððï ÐÝÞ ÐñÒæìèòìëÍðïòÈÈÈ ÎÛÊxÍ×ÑÒæ óï Ó±¾•´» ÝÐË Ôîæ ÙÒÜ Ì«¿´¿¬·² ÝÔÕÙÛÒò ×Ó× Ýçèîé í ÷ Ôíæ Í·¹²¿´ î øÝÔÕ ÝÎÌ ÝÑÒÒ


    Original     		PDF SLCX32 TSLCX32 TSLCX74 TSAHC14 TSAHC08 TSHC4066 TM360 fet B20 p03 u7620 DCD-1530 BC148 pin configuration wistron docking foxconn WISTRON power sequence FW82807A Wistron Corporation SC 3062

    panasonic inverter dv 700 manual

    Abstract: RJ45 specification winbond w39v040fap LP150E02-A2P1 Phoenix BIOS specification GWA-4040N hitachi lcd tft 2 VGA to mini dvi CABLE CONNECTION DIAGRAM BTP-60A1 KBC-M38857
    Text: Acer Aspire 1610 Series Service Guide PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on Aspire 1610 service guide. Date II Chapter Updates Copyright Copyright 2004 by Acer Incorporated. All rights reserved. No part of this publication may be reproduced,


    Original     		PDF

    SB315

    Abstract: gd2 ec16 BC327 C327 DVD remote controL HDT SCD22U vt8237 16-2-2C STM-M50FW040 24C256 foxconn
    Text: A B C D Gannet Block Diagram 3 CLK GEN AMD CPU 11,12,13 UNBUFFERED DDR SODIMM Athlon 64 4 11,12,13 UNBUFFERED DDR SODIMM 31 1394 Conn 32 RICOH R5C554 Power Switch 5532V PCMCIA 2 SLOTS Support TypeIII 8,9,10 VGA VIA 2* Slot Cardbus + 2* 1394 Ports K8T800 AGTL+ CPU I/F


    Original     		PDF CY28331-2 200-PIN 16b/8b DDR-SDRAM17 K4D263238A-GC36 R5C554 K8T800 GND18 42P26 GND26 SB315 gd2 ec16 BC327 C327 DVD remote controL HDT SCD22U vt8237 16-2-2C STM-M50FW040 24C256 foxconn

    C2P1

    Abstract: foxconn VT1617A VT1617 VIA vt8237 DY-SE220U2VDM-6 WISTRON power sequence HP connectors Wistron Corporation Wistron Corporation Egret
    Text: A B C D E EGRET Block Diagram 200-PIN DDR SODIMM CLK GEN ICS ICS950405 4 AMD CPU DDR 3 33/400 DDR x2 Claw Hammer K8 PCB Layer Stackup 8,9,10 3 L1: Signal 1 L2: GND L3: Signal 2 L4: Signal 3 L5: VCC L6: Signal 4 4,5,6,7 TV Encoder VIA VT1623M HyperTransport


    Original     		PDF 200-PIN ICS950405 16b/8b TPS2224AP VT1623M K8N800 VT1631 MAX1645BEEI 66MHZ C2P1 foxconn VT1617A VT1617 VIA vt8237 DY-SE220U2VDM-6 WISTRON power sequence HP connectors Wistron Corporation Wistron Corporation Egret

    ICS9112BM-17

    Abstract: asus bc458 BC148 pin configuration bc482 BC451 foxconn SC15P nds0610 bc305
    Text: Falcon2.2 CLK GEN. CY2285-2 Mobile PIII PAGE:3 PCB LAYER 00205-1 L1:COMPONENT Project code :91.44G01.001 PCB P/N = 48.41J01.001 REVISION : 1 L2:GND L3:SIGNAL CLK L4:VCC Celeron SDRAM CLK BUFFER L5:SIGNAL(CLK) verson : A2 or A3 ICS-9112-17 DIMM*2 L8:COMPONENT


    Original     		PDF CY2285-2 44G01 41J01 ICS-9112-17 M1621 MIC2563 M1535 OZ6933 BCX27 ICS9112BM-17 asus bc458 BC148 pin configuration bc482 BC451 foxconn SC15P nds0610 bc305

    sis661fx

    Abstract: GS1117Y ICS952013 d7677 LM393R hitachi ha md50 sis 963l SRP11 M661MX sis 741gx
    Text: 5 4 3 321 V.1.0 2 Clock Gen. Pentium-M / Celeron-M CPU Sideband Bus RTC,VCC3,VCC5 PAGE 9 1 DC_IN Select PAGE 26 PAGE 30 Thermal D D PAGE 2,3,4 Clock Buffer PAGE 10 ECVCC/+5VAUX 400M/533M PAGE 31 CRT Memory Bus North Bridge PAGE 13 SiS M661GX / FX LVDS Board


    Original     		PDF 400M/533M 266M/333M M661GX MAX1907A 302ELV 533M/1G MAX1858 ITE8705 GS1117Y ENE3910 sis661fx ICS952013 d7677 LM393R hitachi ha md50 sis 963l SRP11 M661MX sis 741gx

    BC518

    Abstract: acer battery pinout ATI RAGE mobility m1 acer 15.6 pinout BC505 R2501a BC466 rdn27 asus BC370
    Text: CLK GEN. ICS9248-61 Acer B-NOTE CPU COPPERMINE PAGE:3 V1.5 PCB LAYER TOP L1 : SIGNAL1 L2 : SIGNAL2 L3 : GND L4 : SIGNAL3 L5 : SIGNAL4 L6 : VCC L7 : SIGNAL5 L8 : SIGNAL6 BOTTOM PAGE:4,5,6 Geyserville SDRAM CLK BUF ICS9112-17 PAGE:6 HOST BUS PAGE:3 MEM BUS DIMM*2


    Original     		PDF ICS9248-61 ICS9112-17 440BX MAX1627 MAX1711 ES1946 BC241 BC510 BC511 BC436 BC518 acer battery pinout ATI RAGE mobility m1 acer 15.6 pinout BC505 R2501a BC466 rdn27 asus BC370

    RP11A

    Abstract: AX6648 s 9412 W83L950 elitegroup computer C286-2 MB3887 15-F44-01 elitegroup nel d32 43
    Text: 5 4 3 2 1 SOCKET 479 Banias/Dothan 478 uFCPGA G553 PAG E 2,3,4 D D HOST BUS 100MHZ 4X LCD DISPLAY NORTH BRIDGE P A GE 12 DDR DRAM 100/133M/166MHz 2X 855GM/GME MCH-M CRT DISPLAY P A GE 12 SYS POWER P A GE 9,10 REGULAR VCCP VCCA VCC_MCH P A G E 5,6,7,8 CHARGER


    Original     		PDF 100MHZ 855GM/GME 100/133M/166MHz CH7011 66MHZ 14MHZ G553-1-4-01 5-F44-010010 5-F44-011000 5-F44-013000 RP11A AX6648 s 9412 W83L950 elitegroup computer C286-2 MB3887 15-F44-01 elitegroup nel d32 43

    cfw SOT23

    Abstract: No abstract text available
    Text: November 1997 F /\IR G H II_ D M lC O N D U C T O R FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor GeneralDescription Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF FDS9412 cfw SOT23

    Untitled

    Abstract: No abstract text available
    Text: November 1997 F A IR C H IL D S E M IC O N D U C T O R tm FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Descri ption Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell


    OCR Scan     		PDF FDS9412 FDS9412

    FDS9412

    Abstract: SOIC-16
    Text: S E M IC O N D U C T O R TM FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Descri ption Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF FDS9412 OT-23 FDS9412 SOIC-16