FE2A Search Results

8YV27-200

Abstract: VR300 FEP16GT UFS400 FES16CT FES16DT FES16FT FES16GT FEP30HP/45 FE5B
Contextual Info: LOW CURRENT AXIAL FAST EFFICIENT RECTIFIERS FE1A thru FE1D GI1001 thru GI1004 FE2A thru FE2D BYV27-50 thru BYV27-200 G/1tOI thru G11104 DO-2MAP D0-204AP DO-240AP D0-204AP D0204AP G4 G4 G4 G4 G4 1 1 2 2 2.5 3.0 3.5 5.0 6.0 6.0 VR-50 V FE1A GH 001 FE2A BYV27-50

DO-204AP

Abstract: fe2c
Contextual Info: FE2A to FE2D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

Contextual Info: FE2A . FE2G FE2A . FE2G Superfast Switching Silicon-Rectifiers Superschnelle Silizium-Gleichrichter Version 2005-11-08 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ±0.05 50.400 V Plastic case Kunststoffgehäuse

Contextual Info: FE2A THRU FE2D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current -2 .0 Amperes FEATURES « y DO-2Q4AP T 0.034 0.86 0.0 2 8 (0.71) 1.0 (25 .4) DIA. ♦ ♦ ♦ ♦ ♦ MIN. a t I I I 0 .150 (3 .8) I 0.2 4 0 (6 . 1)

Contextual Info: FE2A . FE2G FE2A . FE2G Superfast Switching Silicon Rectifier Diodes Superschnelle Silizium-Gleichrichterdioden Version 2012-05-14 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50.400 V Plastic case Kunststoffgehäuse

fe2c

Contextual Info: FE2A THRU FE2D MINIATURE GLASS PASSIVATED FAST EPITAXIAL RECTIFIER Voltage - 50 to 200 Volts Current - 2.0 Amperes FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Glass passivated cavity-free junction Superfast recovery times-epitaxial construction Low forward voltage, high current capability

fe2c

Contextual Info: FE2A thru FE2D Vishay Semiconductors formerly General Semiconductor Glass Passivated Ultrafast Rectifier DO-204AP 0.034 0.86 0.028 (0.71) DIA. 1.0 (25.4) MIN. *Features d e nt e t Pa • High temperature metallurgically bonded construction • Cavity-free glass passivated junction

DO-204AP

Abstract: fe2c
Contextual Info: FE2A / 2B / 2C / 2D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

DO-204AP

Abstract: fe2c
Contextual Info: FE2A THRU FE2D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 2.0 Amperes * FEATURES D TE N DO-204AP TE A P 0.034 0.86 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. ♦ High temperature metallurgically bonded construction

Contextual Info: FE2A . FE2G FE2A . FE2G Superfast Switching Silicon Rectifier Diodes Superschnelle Silizium-Gleichrichterdioden Version 2013-10-15 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ±0.05 50.400 V Plastic case

Contextual Info: FE2A . FE2G FE2A . FE2G Superfast Switching Silicon-Rectifiers Superschnelle Silizium-Gleichrichter Version 2005-07-20 Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ±0.05 50.400 V Plastic case Kunststoffgehäuse

DO-204AP

Contextual Info: FE2A thru FE2D Glass Passivated Ultrafast Rectifier DO-204AP 0.034 0.86 0.028 (0.71) DIA. d* e t en Features t a P Reverse Voltage 50 to 200V Forward Current 2.0A • • • • • High temperature metallurgically bonded construction Cavity-free glass passivated junction

DO-204AP

Abstract: fe2c
Contextual Info: FE2A THRU FE2D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 2.0 Amperes * FEATURES D TE N DO-204AP TE A P 0.034 0.86 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.240 (6.1) MAX. 0.150 (3.8) 0.100 (2.5) DIA. ♦ High temperature metallurgically bonded construction

fe2c

Contextual Info: FE2A / 2B / 2C / 2D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

DO-204AC

Abstract: 2A09
Contextual Info: FE2A . FE2G FE2A . FE2G Superfast Switching Silicon Rectifier Diodes Superschnelle Silizium-Gleichrichterdioden Version 2005-11-08 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 50.400 V Plastic case Kunststoffgehäuse

Contextual Info: FE2A … FE2G Superfast Silicon Rectifiers Superschnelle Silizium Gleichrichter Version 2004-10-01 Nominal current Nennstrom ±0.05 6.3 ±0.1 Type 62.5 ±0.5 Ø3 2A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…400 V Plastic case Kunststoffgehäuse

fe2c

Contextual Info: FE2A / 2B / 2C / 2D VISHAY Vishay Semiconductors Ultra Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Superfast recovery time for high efficiency • Low forward voltage, high current capability

fe2b

Contextual Info: TH97/10561QM FE2A ~ FE2G TW00/17276EM IATF 0060636 SGS TH07/1033 SUPER FAST RECTIFIERS DO-15 PRV : 50 - 400 Volts Io : 2.0 Amperes * * * * * * Superfast recovery time for high efficiency High surge current capability High current capability Low leakage current

DO-204AC

Contextual Info: FE2A . FE2G FE2A . FE2G Superfast Switching Silicon-Rectifiers Superschnelle Silizium-Gleichrichter Version 2005-11-08 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ±0.05 50.400 V Plastic case Kunststoffgehäuse

Contextual Info: FE2A THRU FE2D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Voltage 50 to 200 Volts - Current -2 .0 Amperes FEATURES ♦ ♦ ♦ ♦ D0-2Q4AP .034 .86 .028 (.71) ♦ ♦ ♦ ♦ 1.0(25.4) 2 .0 240 ¿ • à ♦ (6.1 (6 .1 ) L .150(3.8) .100(2.5) I MAX. MflX

Contextual Info: FE2A THRU FE2D GLASS PASSIVATED FAST EFFICIENT RECTIFIER Reverse Voltage - 50 to 200 Volts Forward Current - 2.0 Amperes FEATURES ♦ ♦ ♦ ♦ ♦ DO-2Q4AP 0.028 0 71', DiA f i - T 1 0.240/1 I MA} High temperature metallurgicaliy bonded construction Glass passivated cavity-free junction

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

advantages of microcontroller

Abstract: Microcontroller advantages of AT89C51 rcd12 CRC-16 CRC-32 541GCI
Contextual Info: Am186 CC/CH/CU Microcontrollers Register Set Manual Order #21916B 1998 Advanced Micro Devices, Inc. All rights reserved. Advanced Micro Devices, Inc. "AMD" reserves the right to make changes in its products without notice in order to improve design or performance characteristics.