Filtres suppresseurs de transitoires
Abstract: zener diode catalogue ISO STANDARDS SHEET METAL ceramique zener diode catalog technologie des diode filtres ceramique
Text: FILTRES SUPPRESSEURS DE TRANSITOIRES TECHNOLOGY Interconnection of multilayer ceramic discoidal capacitors with inductors and Zener diode Tinned metal housing Mounting : threaded ISO I Sealing glass beads (V) Solder tag terminals. TRANSIENT SUPPRESSOR FILTERS
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HT 1000-4
Abstract: condensateur ceramique 104 ET 3005 D3008 capacite 335 ceramique DR3003 3049A 2021E filtres ceramique
Text: Sommaire Summary Filtres cellule en C C type filters FC 030 20 FC 030 Haute température –55°C +175°C FC 030 21 FC 030 Haute température – 55°C +175°C pour microboîtiers FC 030 High temperature –55°C +175°C FC 030 22- 23 FC 030 High temperature
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2021E
HT 1000-4
condensateur ceramique 104
ET 3005
D3008
capacite 335
ceramique
DR3003
3049A
filtres ceramique
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transistor code x1
Abstract: No abstract text available
Text: PI6C3501 Low Power Spread Spectrum Frequency Multiplier Features Description • Produces a 4-time spread spectrum clock signal from input frequency • Operates on 2.5V or 3.3V Power Supply • 12MHz to 30MHz Input frequency range • Frequency Spreading Ratio : -1.2% Typical @ 66MHz output
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PI6C3501
12MHz
30MHz
66MHz
Fin/640
OT-23
PI6C3501
PI6C3501TE
transistor code x1
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RFPA3809
Abstract: cap 18pF 50V 10 0603 X7R RFMD PA LTE fer bead PAF-S05
Text: RFPA3809 RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features High Linearity: OIP3=49dBm 880MHz Low Noise: NF=3.1dB (2140MHz) P1dB>29dBm 400MHz to 2700MHz Operation Thermally Enhanced Slug
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RFPA3809
400MHz
2700MHz
RFPA3809
49dBm
880MHz)
2140MHz)
29dBm
cap 18pF 50V 10 0603 X7R
RFMD PA LTE
fer bead
PAF-S05
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92196a
Abstract: 0603HC-47NXJL
Text: RFPA3809 RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features High Linearity: OIP3=49dBm 880MHz Low Noise: NF=3.1dB (2140MHz) P1dB>29dBm 400MHz to 2700MHz Operation Thermally Enhanced Slug
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RFPA3809
400MHz
2700MHz
2700MHz
49dBm
880MHz)
2140MHz)
29dBm
92196a
0603HC-47NXJL
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umk105cg101jv-f
Abstract: RF transceiver LTE RFPA3809 BLM18EG221SN1D AVX 0402 C0G PAF-S05-008 TAJA106K010R PAF-S05 CG180JV-F PA380X410
Text: RFPA3809 RFPA3809 GaAs HBT 400MHz to 2700MHz Power Amplifier GaAs HBT 400MHz TO 2700MHz POWER AMPLIFIER Package: SOIC-8 Features High Linearity: OIP3=49dBm 880MHz Low Noise: NF=3.1dB (2140MHz) P1dB>29dBm 400MHz to 2700MHz Operation Thermally Enhanced Slug
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RFPA3809
400MHz
2700MHz
2700MHz
49dBm
880MHz)
2140MHz)
29dBm
umk105cg101jv-f
RF transceiver LTE
RFPA3809
BLM18EG221SN1D
AVX 0402 C0G
PAF-S05-008
TAJA106K010R
PAF-S05
CG180JV-F
PA380X410
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SHH-1M1608-121
Abstract: 401J SHU-1H4516-500J 1m1005 1S1005 SHB-1M1005-400 SHB-1M1005-600 SHB-1M1005-800 chipe array 202J
Text: Chip Ferrite Beads. 1. Effective for suppressing noise at high frequency, form several MHz to several hundreds MHz. 2. Chip type is suited for preventing the abnormal oscillation from high frequency amplifying circuits. 3. Terminal electrode has excellent solder heat resistance for soldering.
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instrument15
SHH-1H4516-600J
SHH-1H4516-121J
SHH-1T4516-121J
SHH-1M4516-132J
SHH-1B5432-132J
SHH-1M5759-401J
SHU-1M2012-600J
SHU-1M2012-121J
SHU-1S3216-500J
SHH-1M1608-121
401J
SHU-1H4516-500J
1m1005
1S1005
SHB-1M1005-400
SHB-1M1005-600
SHB-1M1005-800
chipe array
202J
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Untitled
Abstract: No abstract text available
Text: 71M6533-DB Demo Board USER’S MANUAL Page: 1 of 75 ` REV 3 71M6533 3-Phase Energy Meter IC DEMO BOARD 71M6533-DB USER’S MANUAL Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent
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71M6533-DB
71M6533
71M6533-DB
71M6533-DB)
71M6533H
71M6533)
AN-5292
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Untitled
Abstract: No abstract text available
Text: Chip Bead Array Chip Bead Array Type: EXC28B • Features ■ Recommended Applications ● Space saving ● SSOP package 0.5 mm pitch compatibility ● Small size and lightweight ● Small digital equipment such as PCs, printers, HDD, DVD-ROMs, CD-ROMs, LCDs.
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EXC28B
EXC28BB
EXC28BA
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AH314
Abstract: diode 47 c38 1P603S
Text: Application Note 2.5 – 2.7 GHz AH314 Balanced Amplifier Summary AH314 is a high dynamic range broadband driver amplifier in a surface mount package. This device is targeted for WiMax applications. This application note describes the balanced topology that achieves improved return losses, ruggedness and 3 dB better linearity as compared to
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AH314
diode 47 c38
1P603S
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transistor fp 1016
Abstract: et 1102 EB 1038 diode et 1103 FP-035 1041B-3 57fp FP030
Text: Sommaire Summary Filtres cellule en Pi Pi type filters Modèle / Format Page s Model / Size FP 030 56 - 57 FP 030 FP 035 FP 040 58 - 59 FP 035 FP 040 FP 060 60 - 61 FP 060 FP 100 28,5 VCC 115 V - 400 Hz 115 V - 200 Hz à 1000 Hz FP 100 62 - 65 FP 170 28,5 VCC
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schema UP 5135
Abstract: voltmetre diode catalogue military passive component bridge rectifier Facon v10471 et 1102 EUROFARAD 5027A zx 1052
Text: NOUVELLE EDITION NEW ISSUE Filtres “EMI - RFI” “EMI - RFI” Filters CATALOGUE 029 PRODUCT CATALOG 029 w w w. e u r o f a r a d . c o m certifications ISO 9002 : 001-96 / 005-96 Code OTAN : F 1379 NATO Code : F 1379 S.A.S. au capital de 20 246 400 €
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7014 M
Abstract: 7045-3 7135 LA 7051 7034 LA 7036 7048
Text: Sommaire Summary Filtres cellule en T T type filters Modèle / Format Page s Model / Size FT 100 68 - 69 FT 100 FT 170 70 - 71 FT 170 FT 100 FILTERS T TYPE 28,5 Vcc (Vdc) DIAMETER 10 115 V - 400 Hz TECHNOLOGY Interconnection of multilayer ceramic discoidal capacitor and two inductors
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HFBR-5603
Abstract: HFBR-560 hssdc - db9 HFBR-5609
Text: GBIC Module Design Guidelines for Gigabit Ethernet and Fibre Channel Data Communication Applications Application Note 1158 Overview of Hewlett-Packard GBIC Modules GBIC is an acronym for Gigabit Interface Converter. GBICs are data communication modules that can be hot plugged into operating data
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HDMP-1636
HDMP-1536
5968-2357E
HFBR-5603
HFBR-560
hssdc - db9
HFBR-5609
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AH51
Abstract: BT41 type bb12 and/transistor ah51
Text: v a TÀIYO M • FERRITE CORES/MAGNETS FER R ITE CORES BEAD TYPE gP < .394 in. Part tomber IR A H H B B RING CORES IN CASES and CLAMPS aD > .394 in. 10 mm OD < 394 in. (10 mm) Dimensions In.Amm) 0D L id .024-.118 .098-. 157 .028-.079 (0 6 -3 .0 ) (2.5-4.0)
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Varistor y5s
Abstract: TLF12UA B 102 capacitor Radial Capacitor Y5S tlf25 BB 50-70 capacitor Y5S TLF12UB TLF12U
Text: • LEADED EMC COMPONENTS FER R ITE BEADS AXIAL AND RADIAL LEAD Impedance £2 min Part Number F B A 0 3 B B B -0 0 35 F B A 0 4 O H H -0 0 45-90 Dimensions ln./ mm W ,b D L max D C Resistance Rated Current (A) max (Q ) max 0.01 7.0 .098±.008 (2.5±0.2) .177±.0012
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TLF12
TLF12UA
TLF12UB
TLF25RA
Varistor y5s
B 102 capacitor
Radial Capacitor Y5S
tlf25
BB 50-70
capacitor Y5S
TLF12U
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FBMJ4516
Abstract: FBMH4532 FBMH3225 BK1608H EM 4830 hs111 HM501 HM380
Text: p o r» [TAIYO] «ü a SURFACE MOUNT EMC COMPONENTS FE R R ITE CHIP BEADS BK & BK3216 Array Series: The BK series ferrite beads offer six material types HW, HM, HS, LL, LM, TS and the BK3216 Array series offers three (4M, 4S, 4L) with a wide range of impedance values to provide flexible EMI suppression solutions in
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BK3216
BK1005Ö
BK1608H
BK2125D
BK3216D
HM251
HM501
HM851
HM102
FBMJ4516
FBMH4532
FBMH3225
EM 4830
hs111
HM380
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Untitled
Abstract: No abstract text available
Text: M55339/34-30001 NOTES: 1. MATING: Interface dimensions per Mil-A-55339/TNC Series and Solitron/Microwave MD-108. 2. MATERIALS: All Metal parts except Contacts and Pin:-Contacts : Pin:-Glass Bead: Insulators : O'Ring: - 3. _Stainless Steel per AMS-5640
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M55339/34-30001
Mil-A-55339/TNC
MD-108.
AMS-5640
QQ-C-530,
Mil-P-19468
L-P-403,
Mil-P-25732,
QQ-P-35A,
Mil-G-45204,
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A500kHz
Abstract: VQE 24 led LU374
Text: LU374 TECHNOLOGY 4 .5 A, 500kHz S tep-D ow n Switching Regulator i€ A TU fi€ S D € S C R IP TIO • Constant 500kHz Switching Frequency ■ Easily Synchronizable ■ Uses Aii Surface Mount Components ■ inductor Size Reduced to 1.8|uH ■ Saturating Switch Design: 0.07a
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LU374
500kHz
20pjA
a500kHzmonolithic
100kHz,
150kHz
LT1076
A500kHz
VQE 24 led
LU374
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Untitled
Abstract: No abstract text available
Text: SPEC No. ISSUE: P R E L I M I MR 9 4 3 1 4 A IAK. 1 1995 N A R Y SPECIFICATIONS Product Type 32Mbit MAS K ROM LHMB 5 Rx x Model No. LH53B 32 RO ON SKThis device specification is subject to change »ithout notice. PRESENTED H. TSDGITA Dept. General lianager
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32Mbit
LH53B
LH53B32R00N
LH53B32ROON
-1-A19
CA0-A19)
D0-D15
A2-A19
D0-D15
Q0-D31)
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F624-19Q1
Abstract: Class E power amplifier, 13.56MHz 13.56Mhz class e power amplifier 13.56Mhz rf amplifier Class B power amplifier, 13.56MHz class e and 13.56MHz F624-19 power amplifier 13.56MHz 13.56MHZ mosfet
Text: ADVANCED W /Æ P o w e r M Te c h n o lo g y • R ARF444 300W 300V 13.56MHz ARF445 300W 300V 13.56MHz THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445. RF OPERATION 1-15MHz POWER MOS IV® N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET T he A R F 444 and AR F445 co m prise a sym m etric pair o f RF pow er transistors designed fo r push-pull scientific,
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ARF444
56MHz
ARF445
56MHz
ARF445.
1-15MHz)
F624-19Q1
Class E power amplifier, 13.56MHz
13.56Mhz class e power amplifier
13.56Mhz rf amplifier
Class B power amplifier, 13.56MHz
class e and 13.56MHz
F624-19
power amplifier 13.56MHz
13.56MHZ mosfet
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500w class d amplifier
Abstract: n-channel 500w RF power mosfet
Text: A dvanced P o w er Te c h n o l o g y ARF450 Common Source Push-Pull Pair >u Advanced Information - OTS 71 RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE 150V 500W 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull
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ARF450
120MHz
ARF450
F-33700
500w class d amplifier
n-channel 500w RF power mosfet
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zd 405-MF
Abstract: indiana general
Text: ADVANCED PO W ER Te c h n o l o g y ARF440 ARF441 125W 50V 13.56MHz 125W 50V 13.56MHz THE ARF440 PIN-OUTS ARE MIRROR IMAGE OF THE ARF441. RF OPERATION 1-15MHz POWER MOS IV« N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET T h e A R F 4 4 0 a n d A R F 4 4 1 c o m p ris e a s y m m e tric p a ir o f R F p o w e r tra n s is to rs d e s ig n e d fo r n a rro w -b a n d p u s h -p u ll
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ARF440
ARF441
56MHz
56MHz
ARF441.
1-15MHz)
F-33700
zd 405-MF
indiana general
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ARF442
Abstract: Class B power amplifier, 13.56MHz 13.56mhz class e power amplifier
Text: ADVANCED PO W ER Te c h n o l o g y ARF442 200W 100V 13.56MHz ARF443 200W 100V 13.56MHz THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443. RF OPERATION 1-15MHz POWER MOS IV« N -C H A NN EL ENHANCEMENT MODE RF POWER MOSFET The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
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ARF442
56MHz
ARF443
56MHz
ARF443.
1-15MHz)
Class B power amplifier, 13.56MHz
13.56mhz class e power amplifier
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