FERAM ROHM Search Results

Contextual Info: FEDR44V064A-01 Issue Date: Apr. 22, 2013 MR44V064A 64k 8,192-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

Contextual Info: FEDR45V256A-01 Issue Date: Nov. 12, 2013 MR45V256A 256k 32,768-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V256A is accessed using Serial

taa900

Contextual Info: FEDR44V064A-01 Issue Date: Apr. 22, 2013 MR44V064A 64k 8,192-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

Contextual Info: PEDR45V256A-05 Issue Date: Oct. 17, 2011 MR45V256A 256k 32,768-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V256A is accessed using Serial

MR44V064A

Abstract: PEDR44V064A-05
Contextual Info: PEDR44V064A-05 Issue Date: Oct. 17, 2011 MR44V064A 64k 8,192-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

Contextual Info: FEDR48V256C-01 Issue Date: Nov. 13, 2013 MR48V256C 32,768-Word  8-Bit FeRAM Ferroelectric Random Access Memory GENERAL DESCRIPTION The MR48V256C is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. Unlike SRAMs, this device, whose cells are

Contextual Info: FEDR45V200A-01 Issue Date: Jan. 31, 2014 MR45V200A 2M 262,144-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V200A is a nonvolatile 262,144-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V200A is accessed using

Contextual Info: FEDR45V032A-01 Issue Date: Oct. 23, 2013 MR45V032A 32k 4,096-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V032A is a nonvolatile 4,096-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V032A is accessed using Serial

FeRAM

Contextual Info: PEDR48V256A-06 Issue Date: Oct. 17, 2011 MR48V256A 32,768-Word  8-Bit FeRAM Ferroelectric Random Access Memory GENERAL DESCRIPTION The MR48V256A is a nonvolatile 32,768-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. Unlike SRAMs, this device, whose cells are

Contextual Info: PEDR45V032A-05 Issue Date: Nov. 08, 2011 MR45V032A 32k 4,096-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) SPI GENERAL DESCRIPTION The MR45V032A is a nonvolatile 4,096-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR45V032A is accessed using Serial

ML86V8101

Abstract: ML610Q794G ML7147 ML610Q488 ML98 ML7138 ML7247-001
Contextual Info: Notes 1 The information contained in this document is provided as of october,2013. 2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative as listed below) and verify the

laptops ics and their various functions

Abstract: FeRAM ROHM ushio Rohm LED Lighting RPI-1040 BH1720FVC BA6287F circuit diagram of luminous inverter halogen bulb circuit diagram SH3002-DC80A
Contextual Info: 4 http://www.rohm.com/ei/ Vol. 2009.01 Cover Story 1 Nonvolatile Logic Technology Retain data without a power supply Cover Story 2 Breaking away from silicon Full SiC power modules Cover Story 3 Applying semiconductor technology to the lighting field LED lighting modules

sensor oximeter

Abstract: MSP430U mini clock TP41
Contextual Info: User's Guide SLAU480C – January 2013 – Revised May 2014 AFE4400 and AFE4490 Development Guide This user’s guide describes the characteristics, operation, and use of the AFE44x0SPO2EVM demonstration kit. This demonstration kit is an evaluation module EVM for the AFE4400 and AFE4490

PIC16F72 inverter ups

Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
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