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    FERRITE TRANSFORMER 0.14 RATIO PUSH PULL Search Results

    FERRITE TRANSFORMER 0.14 RATIO PUSH PULL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd

    FERRITE TRANSFORMER 0.14 RATIO PUSH PULL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    planar transformer theory

    Abstract: G10 zener diode AN211A MRF175GU MRF175GV VK200 25 ohm semirigid
    Text: Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


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    PDF MRF175GU/D MRF175GU MRF175GV planar transformer theory G10 zener diode AN211A MRF175GU MRF175GV VK200 25 ohm semirigid

    VK200 INDUCTOR

    Abstract: Nippon capacitors
    Text: MOTOROLA Order this document by MRF175GU/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF175GU MRF175GV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


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    PDF MRF175GU/D MRF175GV MRF175GU MRF175GU MRF175GV MRF175GU/D VK200 INDUCTOR Nippon capacitors

    MRF6VP2600H

    Abstract: ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4.1, 6/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


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    PDF MRF6VP2600H MRF6VP2600HR6 100fficers, MRF6VP2600H ATC100B101JT500XT DVB-T Schematic 88-108 an power 88-108 mhz MRF6VP2600HR6 ferrite transformer 0.14 ratio push pull transformer calculator ATC200B103KT50XT Tantalum chip Capacitor 226 20k

    NIPPON CAPACITORS

    Abstract: MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 4, 5/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6VP2600HR6 Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications.


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    PDF MRF6VP2600H MRF6VP2600HR6 NIPPON CAPACITORS MRF6VP2600HR6 application notes Tantalum chip Capacitor 226 20k MRF6VP2600HR6 Nippon chemi

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    PDF MRF141G floatMRF141G

    MRF141G

    Abstract: u 172 954 zener AN211A
    Text: Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    PDF MRF141G/D MRF141G MRF141G u 172 954 zener AN211A

    transistor Electronic ballast "INDUCTION LAMP"

    Abstract: schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D
    Text: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic


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    PDF AN1543/D AN1543 AN1543/D* transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID Motorola, AN1049 MC14046 AN1049 EB407 5000 watts PURE SINE WAVE inverter schematic diagram induction lamp electronic ballast for fluorescent lighting t8 motorola BR480/D

    transistor Electronic ballast "INDUCTION LAMP"

    Abstract: schematic diagram Electronic Ballast HID AN1049 magnetic amplifier saturable core electronic ballast for fluorescent lighting t8 dimmable Fluorescent BALLAST an1543 Saturable Core Square Wave Oscillator induction lamp ballast schematic hid lamp ballast
    Text: AN1543/D Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse http://onsemi.com APPLICATION NOTE ABSTRACT c. Assure that the circuit will remain stable, even under fault conditions.


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    PDF AN1543/D r14525 transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID AN1049 magnetic amplifier saturable core electronic ballast for fluorescent lighting t8 dimmable Fluorescent BALLAST an1543 Saturable Core Square Wave Oscillator induction lamp ballast schematic hid lamp ballast

    arco 403

    Abstract: MRF141G MRF141G data sheet AN211A Nippon capacitors
    Text: MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    PDF MRF141G/D MRF141G arco 403 MRF141G MRF141G data sheet AN211A Nippon capacitors

    schematic diagram of energy saving lamps 25 watts

    Abstract: Motorola, AN1049 ELECTRONIC BALLAST 150 W HID DIAGRAM Motorola Bipolar Power Transistor Data schematic diagram Electronic Ballast HID Motorola, eb407 Basic Halogen Converter EB407 Basic Halogen Converter FT1603A transistor bc557 eb407
    Text: MOTOROLA Order this document by AN1543/D SEMICONDUCTOR APPLICATION NOTE AN1543 Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade Power Semiconductor Applications Engineer Motorola SPS Toulouse ABSTRACT With a continuous growth rate of 20% per year, electronic


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    PDF AN1543/D AN1543 AN1543/D* schematic diagram of energy saving lamps 25 watts Motorola, AN1049 ELECTRONIC BALLAST 150 W HID DIAGRAM Motorola Bipolar Power Transistor Data schematic diagram Electronic Ballast HID Motorola, eb407 Basic Halogen Converter EB407 Basic Halogen Converter FT1603A transistor bc557 eb407

    transistor Electronic ballast "INDUCTION LAMP"

    Abstract: schematic diagram Electronic Ballast HID MC14046 vogt m4 MJE18605D2 schematic diagram of energy saving lamps 25 watts vogt toroid siemens 230 gas discharge tube induction lamp ballast an1543
    Text: AN1543/D Electronic Lamp Ballast Design Prepared by: Michaël Bairanzade http://onsemi.com APPLICATION NOTE ABSTRACT With a continuous growth rate of 20% per year, electronic lamp ballasts are widely spread over the world. Even though the light out of a fluorescent tube has a discontinuous


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    PDF AN1543/D transistor Electronic ballast "INDUCTION LAMP" schematic diagram Electronic Ballast HID MC14046 vogt m4 MJE18605D2 schematic diagram of energy saving lamps 25 watts vogt toroid siemens 230 gas discharge tube induction lamp ballast an1543

    MRF141G

    Abstract: 954 zener CO-AX TOROIDS Design Considerations AN211A Nippon capacitors
    Text: MOTOROLA Order this document by MRF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this


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    PDF MRF141G/D MRF141G MRF141G 954 zener CO-AX TOROIDS Design Considerations AN211A Nippon capacitors

    accessories

    Abstract: 185E28 6l6gc 230v to 12v step down transformer schematic diagram inverter 12v to 115v 400 hz princeton speaker protection circuit ic 1620a 17 PENTODE EL34 bridge rectifier to convert 240V AC into 48v dc 230v to 9v step down transformer
    Text: Quick Tab -Transformer Locator Power: 2-44 Power Chokes: 45-54 Chokes Line: 55-68 Line Audio: 69-78 Audio Guitar Amp: 95-98 Tube Audio Guitar Amp Tube Audio: 79-94 Class 2: 99-102 Class 2 Pulse: 103-106 Pulse Instrument: 107-110 Instrument Power Power A.C. Secondary Voltage - Selection Guide


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    PDF 117/234V accessories 185E28 6l6gc 230v to 12v step down transformer schematic diagram inverter 12v to 115v 400 hz princeton speaker protection circuit ic 1620a 17 PENTODE EL34 bridge rectifier to convert 240V AC into 48v dc 230v to 9v step down transformer

    Power Semiconductor Applications Philips Semiconductors

    Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
    Text: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management


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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS


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    PDF MRF275G

    mallory capacitor fp 150

    Abstract: lt1072 mallory capacitor fp tapped inductor boost converter LT1070 MALLORY CAPACITORS sx 6W Buck Topology EX 0045 bm diode zener frequency and duty cycle control lt1070ct LM308 pin configuration
    Text: Application Note 19 June 1986 LT1070 Design Manual Carl Nelson INTRODUCTION Three terminal monolithic linear voltage regulators appeared almost 20 years ago, and were almost immediately successful for a variety of reasons. In particular, there were relatively few engineers capable of designing a good


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    PDF LT1070 O-220) an19fc AN19-80 mallory capacitor fp 150 lt1072 mallory capacitor fp tapped inductor boost converter MALLORY CAPACITORS sx 6W Buck Topology EX 0045 bm diode zener frequency and duty cycle control lt1070ct LM308 pin configuration

    IC 92112 Q101

    Abstract: Ferroxcube 3C8 Ferrite 3c8 flyback 24v primary center tapped buck and boost power HV Flyback TRANSFORMERS toroid ferrite smps inductor FERRITE TRANSFORMER 20khz toroid pin diagram of LM308 Op Amp IC Self Oscillating Flyback Converters LT1070
    Text: Application Note 19 June 1986 LT1070 Design Manual Carl Nelson INTRODUCTION Three terminal monolithic linear voltage regulators appeared almost 20 years ago, and were almost immediately successful for a variety of reasons. In particular, there were relatively few engineers capable of designing a good


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    PDF LT1070 O-220) an19fb AN19-80 IC 92112 Q101 Ferroxcube 3C8 Ferrite 3c8 flyback 24v primary center tapped buck and boost power HV Flyback TRANSFORMERS toroid ferrite smps inductor FERRITE TRANSFORMER 20khz toroid pin diagram of LM308 Op Amp IC Self Oscillating Flyback Converters

    Ferroxcube 3C8

    Abstract: AN19-16 LT1070 Ferrite 3c8 flyback 6W Buck Topology kelvin 1102 tesla 516 12CM32 TRANSISTOR 22W UG AN-1910
    Text: Application Note 19 June 1986 LT1070 Design Manual Carl Nelson INTRODUCTION Three terminal monolithic linear voltage regulators appeared almost 20 years ago, and were almost immediately successful for a variety of reasons. In particular, there were relatively few engineers capable of designing a good


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    PDF LT1070 Switc65) O-220) AN19-80 an19fa Ferroxcube 3C8 AN19-16 Ferrite 3c8 flyback 6W Buck Topology kelvin 1102 tesla 516 12CM32 TRANSISTOR 22W UG AN-1910

    Nippon capacitors

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz


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    PDF MRF275G/D MRF275G MRF275G/D Nippon capacitors

    mrf275g

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz N–CHANNEL MOS BROADBAND


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    PDF MRF275G/D MRF275G MRF275G MRF275G/D

    planar transformer theory

    Abstract: w4-20 MRF275G AN211A VK200
    Text: MOTOROLA Order this document by MRF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. 150 W, 28 V, 500 MHz


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    PDF MRF275G/D MRF275G planar transformer theory w4-20 MRF275G AN211A VK200

    Series 5000 Chip Data Book

    Abstract: echelon FT-x3 echelon FT-x2 echelon FT-x3 14255R abstract on mini ups system abstract on mini ups system circuit design schematic diagram offline UPS eePROM 2832 FCC-801-M3-16A neuron 5000
    Text: Series 5000 Chip Data Book 0 0 5 - 0 1 9 9 - 0 1B Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, LNS, ShortStack, LonMaker, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. 3170 and FTXL are trademarks of


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    PDF TPT/XF-1250 Series 5000 Chip Data Book echelon FT-x3 echelon FT-x2 echelon FT-x3 14255R abstract on mini ups system abstract on mini ups system circuit design schematic diagram offline UPS eePROM 2832 FCC-801-M3-16A neuron 5000

    J360

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power FSeld-Effect Transistors MRF175GU M RF175GV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using push pull circuits at frequencies to 500 MHz. The high power, high gain and broadband


    OCR Scan
    PDF MRF175GV MRF175GU MRF175GU RF175GV MRF175G MRF175GV J360

    BMF 11A

    Abstract: r02f 16V7K MALLORY CAPACITOR CATALOG 20h inductor TOTALLY ISOLATED CONVERTER 630fl IL393 K895 LG TV flyback transformer
    Text: urm ECHNOLOGY Application Note 19 June 1986 LT1070 Design Manual Carl Nelson INTRODUCTION Three terminal monolithic linear voltage regulators appeared almost 20 years ago, and were almost immediately success­ ful for a variety of reasons. In particular, there were relatively


    OCR Scan
    PDF LT1070 O-220Type LT1070MK, LT1070HVMK LT1070CK, LT1070HVCK LT1070CT, LT1070HVCT BMF 11A r02f 16V7K MALLORY CAPACITOR CATALOG 20h inductor TOTALLY ISOLATED CONVERTER 630fl IL393 K895 LG TV flyback transformer