FET 3205 Search Results

AN1081S

Abstract: AN1081 1081S AN6583
Contextual Info: Panasonic Operational Amplifiers A N 1081, AN1081S, A N 6583 Single J-FET Input Operational Amplifiers • Overview The AN1081, the AN1081S and the AN6583 are single operational amplifiers with input stages consisiting of Pch J-FET adopting the ion implantation process, realizing

Tc-25-t

Abstract: 2SK1330A 2SK1330 VJ640 U0-17 I32O
Contextual Info: Power F-MOS FET 2SK1330, 2SK1330A 2SK1330, 2SK1330A Silicon N-Channel Power F-MOS FET Package Dimensions • Features Unit: mm • Low R EB c,n = 1 . 3 i l (typ.) 5.2max. 15.5max. 6.9min. • High speed switching t(= 120ns (typ.) • Secondary breakdown free

TL 1084

Abstract: 2SK766 1084 fet
Contextual Info: P o w er F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistance R ds on : R ds (on) = 2 .4 fl (typ.) • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage

Contextual Info: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS

2SK766

Contextual Info: Power F-MOS FET 2SK766 2SK766 Silicon N-channel Power F-MOS FET • Package Dimensions ■Features • Low ON resistan ce R ds on : R Ds (on) = 2 .4 f l (ty p .) Unit: mm • High switching rate : tf = 35ns (typ.) • No secondary breakdown • High breakdown voltage

3205 FET

Abstract: FET 3205 transistor c 3205 C 3205 D1210UK
Contextual Info: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS

D1210UK

Contextual Info: TetraFET D1210UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS

FET 3205

Abstract: 3205 FET D1210UK
Contextual Info: TetraFET D1210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1210UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 175MHz SINGLE ENDED A B C 1 2 D 4 3 E M F G FEATURES H I K • SIMPLIFIED AMPLIFIER DESIGN J • SUITABLE FOR BROAD BAND APPLICATIONS

2SK770

Contextual Info: P ow er F-MOS FET 2SK770 2SK770 Silicon N-channel Power F-MOS FET • Features Package Dimensions • Low ON resistan ce RDs on : RDS (on) = 3 .5 il (typ.) • High sw itching ra te : tf= 3 0 n s (typ.) • No secondary breakdow n • High breakdow n voltage

2SK1036

Contextual Info: P o w e r F-MOS FET 2SK10 3 6 2S K 1036 Silicon N-channel Power F-M OS FET P ackage Dimensions • F eatures • Low ON resistance RCs on : RDs (on) = 0.211 (typ.) • High switching rate : tf = 80ns (typ.) • No secondary breakdown Unit: mm Di uvJ i o

2SK1331

Contextual Info: P o w er F-MOS FET 2SK1331 2SK1331 Silicon N-Channel Power F-M O S FET Package Dimensions • Features • Low R r d <o„ = 0 .3 8 ii typ.) Unit: mm 5.2max. . 15.5max. 6.9min. • High speed sw itching t f= 100ns (typ.) • Secondary breakdow n free 3.2

2SK1262

Abstract: 2SK12
Contextual Info: P o w er F-MOS FET 2SK 1262 2SK 1262 Silicon N-channel Power F-M O S FET • Package Dim ensions ■ Features • Low ON resistance R d s on : R Us (on) l = 0.048fl (typ.) • High switching ra te : tf = 190ns (typ.) Unit: mm • No secondary breakdow n

2SK996

Abstract: 1128A FET 1127
Contextual Info: P o w er F-MOS FET 2SK 996 2SK996 Silicon N-channel Power F-M O S FET Package Dim ensions • Features • Low ON resistan ce R ds on : R d s (on) = 1 .2 ii (typ.) • High sw itching ra te : tf = 60ns (typ.) • No secondary breakdown Unit: mm .10 2rr L4m ax

2SK981

Abstract: 2SK981A
Contextual Info: P o w e r F-MOS FET 2SK981, 2SK 981A 2SK981, 2SK981A Silicon N-channel Power F-MOS FET P ackage Dim ensions • Features • Low ON resistan ce R Ds on : RDs (on) = 2. Oil (typ.) Unit: mm • High sw itching ra te : tt = 40ns (typ.) 3.7m ax 7.3max. • No secondary breakdow n

2SK807

Contextual Info: Power F-MOS FET 2SK807 2SK807 Silicon N-channel Power F-MOS FET Package Dimensions • Features • Low ON resistan ce R DS on : RDb (on) = l . l i l (typ.) • High switching ra te : tf= 7 0 n s (typ.) Unit: mm • No secondary breakdow n • High breakdow n voltage, large pow er

2SK1330

Abstract: 2SK1330A
Contextual Info: P o w er F-MOS FET 2SK1330, 2SK1330A 2S K 1330, 2S K 1330A Silicon N-Channel Power F-M OS FET • P ackage Dim ensions ■ Features • Low R rd on =1.3il (typ.) • High speed switching t(= 120ns (typ.) • Secondary breakdow n free • High breakdow n voltage, high pow er

2SK757

Contextual Info: Power F-MOS FET 2SK 757 2SK757 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistan ce R ds on : R ds Unit: mm (on) = 0 .2 2 il (typ.) • High sw itching ra te : tr= 6 0 n s (typ.) • No secondary breakdow n ■ Application

2SK765A

Abstract: 2SK765
Contextual Info: P o w e r F-MOS FET 2SK765, 2SK 765A 2SK765, 2SK765A Silicon N-channel Power F-MOS FET Package Dimensions • Features • • • • Low ON resistance R ds on : R Ds (on) = 0 .5ft (typ.) High switching rate : tf= 9 0n s (typ.) No secondary breakdown High breakdown voltage, large power

Contextual Info: Power F-MOS FET 2SK796, 2SK796A 2SK796, 2SK796A Silicon N-channel Power F-MOS FET Package Dimensions • Features • L ow ON r e s is ta n c e R ds on : R DS (on) = 3 . OH (ty p .) Unit: mm • High sw itch in g r a te : t f = 4 0 n s (ty p .) k 15._5max.

2SK1260

Abstract: JI35
Contextual Info: P o w er F-MOS FET 2SK1260 2S K 1260 Silicon N-channel Power F-M O S FET • Package Dimensions ■ Features • Low ON resistan ce R ds on : R ds (on) l = 0 .3 1 5 ii (typ.) Unit: mm • High switching rate : t f= 3 8 n s (typ.) • No secondary breakdown

2SK769

Contextual Info: P o w er F-MOS FET 2SK769 2SK769 Silicon N-channel Power F-MOS FET • Package D im ensions ■ Features • L ow O N r e s is ta n c e Rui on : R Ds (on) = 0 ,6 5 il (ty p .) Unit: mm • H igh sw itch in g r a te : t f = 9 0 n s (ty p .) 5.2max 15 5max

2SK1036

Contextual Info: Power F-MOS FET 2SK1036 2SK1036 Silicon N-channel Power F-MOS FET Package Dimensions •Features • Low ON r e s is ta n c e R ds on : R ds (on) = 0 . 2 f t (ty p .) Unit: mm • High sw itch in g ra te : ti = 8 0 n s (ty p .) 5 7m ax. • No seco n d a ry breakdow n