FET 500V 10A Search Results
FET 500V 10A Datasheets Context Search
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Contextual Info: 2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit |
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2SK1278 | |
mosfet 500v 10A
Abstract: diode 500v 10A mosfet 10a 500v power diode 500v 10A 2SK1278
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2SK1278 mosfet 500v 10A diode 500v 10A mosfet 10a 500v power diode 500v 10A 2SK1278 | |
2SK2640-01MRContextual Info: 2SK2640-01MR N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - |
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2SK2640-01MR 2SK2640-01MR | |
2SK2641-01
Abstract: mosfet 500v 10A
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2SK2641-01 2SK2641-01 mosfet 500v 10A | |
2SK2641-01Contextual Info: 2SK2641-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - |
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2SK2641-01 2SK2641-01 | |
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Contextual Info: FU JI 2SK2640-01MR N-channel MOS-FET FAP-IIS Series 500V 0,9Q 10A 50W > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - |
OCR Scan |
2SK2640-01MR 0004tbl | |
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Contextual Info: 2SK2641-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - |
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2SK2641-01 | |
2SK2640-01MRContextual Info: 2SK2640-01MR N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - |
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2SK2640-01MR 2SK2640-01MR | |
mosfet 500v 10A
Abstract: 2sk2640 2SK2640 equivalent 2SK2640-01MR power diode 500v 10A
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2SK2640-01MR mosfet 500v 10A 2sk2640 2SK2640 equivalent 2SK2640-01MR power diode 500v 10A | |
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Contextual Info: 2SK2757-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators |
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2SK2757-01 | |
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Contextual Info: 2SK2757-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators |
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2SK2757-01 | |
2SK2213-01LContextual Info: 2SK2213-01L,S N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2213-01L | |
2SK1981-01Contextual Info: 2SK1981-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK1981-01 2SK1981-01 | |
2SK1936-01
Abstract: 2sk1936
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2SK1936-01 2SK1936-01 2sk1936 | |
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Contextual Info: 2SK1981-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK1981-01 | |
2SK2223Contextual Info: 2SK2223-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2223-01 2SK2223 | |
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Contextual Info: 2SK1936-01 N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 100W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK1936-01 | |
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Contextual Info: 2SK2213-01L,S N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2213-01L | |
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Contextual Info: 2SK2758-01L,S N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications |
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2SK2758-01L | |
2SK2757-01Contextual Info: 2SK2757-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators |
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2SK2757-01 2SK2757-01 | |
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Contextual Info: 2SK2223-01R N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2223-01R | |
2SK2223-01RContextual Info: 2SK2223-01R N-channel MOS-FET FAP-IIA Series 500V > Features - 0,76Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
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2SK2223-01R 2SK2223-01R | |
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Contextual Info: 2SK2758-01L,S N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications |
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2SK2758-01L | |
2sk2641Contextual Info: F U JI 2SK2641-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Q 10A 100W Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated > Applications |
OCR Scan |
2SK2641-01 v-10A 2sk2641 | |