FET 658 Search Results

sd2t

Contextual Info: THERMAL FET HAF2002 Silicon N Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability HITACHI ADE-208-503 1st. Edition Features This FET has the over temperature shut-dow n capability sensing to the junction temperature. This FET has the built-in over temperature shut-dow n circuit in the gate area. And this circuit

NEC Ga FET marking L

Abstract: NE76184B marking K gaas fet NEC Ga FET marking A nec gaas fet marking NEC Ga FET marking Rf nec 9000 NEC Ga FET marking V NEC Ga FET "marking V" NEC Ga FET
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity.

AN1081S

Abstract: AN1081 1081S AN6583
Contextual Info: Panasonic Operational Amplifiers A N 1081, AN1081S, A N 6583 Single J-FET Input Operational Amplifiers • Overview The AN1081, the AN1081S and the AN6583 are single operational amplifiers with input stages consisiting of Pch J-FET adopting the ion implantation process, realizing

low noise FET NEC U

Abstract: ym 238
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION NE76184B is a N-channel GaAs MES FET housed in ce­ ramic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.

NEC Ga FET marking Rf

Abstract: nec gaas fet marking
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce­ ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 3 B low -rtoise GaAs FET w ith an N-channel S ch o ttky gate is designed fo r use in S to Ku band am pli­ fiers. The herm etically sealed m etal-ceram ic package as­

Contextual Info: b S 4 T Û 2 cî 0017054 131 • MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1423B SM ALL SIGNAL GaAs FET DESCRIPTION The M G F 1 4 2 3 B , low -noise GaAs FET w ith an N -channel S cho ttky ga te, is designed fo r use in S to Ku band am pli­ fiers. FEATURES

Contextual Info: Panasonic Operational Amplifiers AN 1082, AN 1082S, AN6581 Dual J-FET Input Operational Amplifiers • Overview AN1082 The AN1082, the AN1082S and the AN6581 are dual operational amplifiers with input stages consisting of P-ch J-FET adopting the ion implantation process, realizing

MTV25N50E t2

Abstract: AN569 MTV25N50E SMD310
Contextual Info: MOTOROLA Order this document by MTV25N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTV25N50E TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 25 AMPERES 500 VOLTS RDS on = 0.200 OHM N–Channel Enhancement–Mode Silicon Gate

Contextual Info: MOTOROLA Order this document by MTV25N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information M TV25N 50E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 25 AMPERES 500 VOLTS RDS on = 0.200 OHM N-Channel Enhancement-Mode Silicon Gate

BUK7C06-40AITE

Abstract: ua2022
Contextual Info: BUK7C06-40AITE N-channel TrenchPLUS standard level FET Rev. 05 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing

BUK7907-40ATC

Contextual Info: BUK7907-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

C-Band Power GaAs FET

Abstract: FLC057WG
Contextual Info: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general

Contextual Info: BUK9107-40ATC N-channel TrenchPLUS logic level FET Rev. 04 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

Contextual Info: BUK7907-40ATC N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

Contextual Info: BUK9907-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

BUK9907-55ATE

Contextual Info: BUK9907-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

Contextual Info: BUK7105-40ATE N-channel TrenchPLUS standard level FET Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

BUK7C10-75AITE

Contextual Info: BUK7C10-75AITE N-channel TrenchPLUS standard level FET Rev. 03 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing

FLC057WG

Contextual Info: FLC057WG C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 9.0dB(Typ.) High PAE: ηadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general

Contextual Info: BUK7C08-55AITE N-channel TrenchPLUS standard level FET Rev. 02 — 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing

Contextual Info: BUK9907-40ATC N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for

BUK7C06-40AITE

Contextual Info: BUK7C06-40AITE N-channel TrenchMOS standard level FET Rev. 04 — 23 June 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using TrenchMOS technology, featuring very low on-state resistance and including

Contextual Info: BUK9107-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for