FET A 1412 Search Results

MOSFET 4466

Abstract: 4466 8 pin mosfet pin voltage dual sot363 BF1102 mosfet 1412 dual gate mosfet MGS365 marking code AL mosfet handbook
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single

BF1203

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Preliminary specification 2000 May 29 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102R Dual N-channel dual gate MOS-FET Preliminary specification 2000 Jan 06 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102R PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single

philips power mosfet

Abstract: km 1667 BF1204
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification 2000 Nov 13 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single

63 1826 0441

Abstract: ATF551M4 ATF-551M4 ATF-551M4-BLK ATF-551M4-TR1 ATF-551M4-TR2 pHEMT FET marking A
Contextual Info: ATF-551M4 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Miniature Leadless Package Data Sheet Description Features Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E‑pHEMT GaAs FET housed in a thin miniature leadless package.

PNP transistor 8555

Abstract: transistor TT 2146 TL 2272 -L4 GA 88
Contextual Info: ATF-551M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Description Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E-pHEMT GaAs FET housed in a thin miniature leadless package.

Contextual Info: ATF-551M4 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Miniature Leadless Package Data Sheet Description Features Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E‑pHEMT GaAs FET housed in a thin miniature leadless package.

AV02-0924EN

Abstract: code v MiniPak
Contextual Info: ATF-551M4 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Miniature Leadless Package Data Sheet Description Features Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E‑pHEMT GaAs FET housed in a thin miniature leadless package.

ATF551M4

Abstract: ATF-551M4 ATF-551M4-BLK ATF-551M4-TR1 ATF-551M4-TR2 MuR 826
Contextual Info: ATF-551M4 Low Noise Enhancement Mode ­Pseudomorphic HEMT in a ­Miniature Leadless Package Data Sheet Description Features Avago Technologies’ ATF-551M4 is a high dynamic range, super low noise, single supply E‑pHEMT GaAs FET housed in a thin miniature leadless package.

WD 969

Abstract: BUK753 quick 967 esd
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

BUK9275-100A

Contextual Info: BUK9275-100A TrenchMOS logic level FET Rev. 01 — 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK9275-100A

Contextual Info: BUK9275-100A TrenchMOS logic level FET Rev. 02 — 4 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK9237-55A

Abstract: buk9237
Contextual Info: BUK9237-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK9230-55A

Contextual Info: BUK9230-55A TrenchMOS logic level FET Rev. 02 — 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Contextual Info: BUK9226-75A TrenchMOS logic level FET Rev. 01 — 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK7230-55A

Abstract: IS100
Contextual Info: BUK7230-55A TrenchMOS standard level FET Rev. 01 — 29 September 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK9240-100A

Contextual Info: BUK9240-100A TrenchMOS logic level FET Rev. 01 — 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

buk7240-100a

Contextual Info: BUK7240-100A TrenchMOS standard level FET Rev. 01 — 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK7219-55A

Contextual Info: BUK7219-55A TrenchMOS standard level FET Rev. 01 — 02 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

07584

Contextual Info: BUK7226-75A TrenchMOS standard level FET Rev. 01 — 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

philips sc 201

Abstract: BUK98180-100A SC-73
Contextual Info: BUK98180-100A TrenchMOS logic level FET Rev. 01 — 1 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK7275-100A

Contextual Info: BUK7275-100A TrenchMOS standard level FET Rev. 01 — 25 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK7535-100A

Abstract: BUK7635-100A
Contextual Info: BUK7535-100A; BUK7635-100A TrenchMOS standard level FET Rev. 01 — 02 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Contextual Info: BUK7277-55A TrenchMOS standard level FET Rev. 01 — 1 February 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.