FET C42 Search Results

NEC uPA 63 H

Abstract: NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 MEL12 UPA672T UPA572T UPA602 nec sc-59 fet
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR ,uPA502T N-CHANNEL MOS FET 5-PIN 2 CIRCUITS The pPA502T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +O.’

Contextual Info: eÊ Stanford Microdevices Product Description SPF-2098 Stanford M icrodevices’ SPF-2098 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 1-23 GHz, Low Noise PHEMT G a As FET

Contextual Info: TetraFET D5011UK METAL GATE RF SILICON FET MECHANICAL DATA A N & D  % C $ ! # " B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 50V – 500MHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D5013UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 500MHz SINGLE ENDED C N typ  B A ! D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

JMK105BJ105KV

Abstract: h-bridge converter JMK212BJ226MG UMK105 poliswitch BD9639MWV Yuden SAW bd96 high side buck driver
Contextual Info: Regulators ICs for Digital Cameras and Camcorders Switching Regulator ICs with Built-in FET 5V BD9639MWV No.11036ECT16 ●Description BD9639MWV is 6ch system switching regulator IC that has built-in FET and Error amp phase compensation for DSC/DVC. The built-in circuit which consist of 2ch Buck-Boost / 2ch Buck / 2ch Boost circuits realize the high efficiency.

NR4018T2R2N

Contextual Info: Regulators ICs for Digital Cameras and Camcorders Switching Regulator ICs with Built-in FET 5V BD9639MWV No.11036ECT16 ●Description BD9639MWV is 6ch system switching regulator IC that has built-in FET and Error amp phase compensation for DSC/DVC. The built-in circuit which consist of 2ch Buck-Boost / 2ch Buck / 2ch Boost circuits realize the high efficiency.

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295

J307 FET

Abstract: AGR19180EF JESD22-A114 agere c8
Contextual Info: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

CLF7045-1R5N

Contextual Info: TPS54295 SLVSB01B – OCTOBER 2011 – REVISED DECEMBER 2011 www.ti.com 2A Dual Channel Synchronous Step-Down Switcher with Integrated FET SWIFT Check for Samples: TPS54295 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • •

J307 FET

Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Contextual Info: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

Contextual Info: TPS54295 SLVSB01B – OCTOBER 2011 – REVISED DECEMBER 2011 www.ti.com 2A Dual Channel Synchronous Step-Down Switcher with Integrated FET SWIFT Check for Samples: TPS54295 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • •

Contextual Info: TPS54295 SLVSB01B – OCTOBER 2011 – REVISED DECEMBER 2011 www.ti.com 2A Dual Channel Synchronous Step-Down Switcher with Integrated FET SWIFT Check for Samples: TPS54295 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • •

A102 A106 A107 C103 C109 C114

Abstract: A114 esh IOR 5B1 mdb25 philips r360 2n3904, itt BAR54 foxconn 82443GX 2D6 SOT-23
Contextual Info: A B C D E Intel 100MHz Pentium R II processor/440GX AGPset Dual-Processor Customer Reference Schematics 4 Revision 1.0 4 PAGE TITLE COVER SHEET 1 BLOCK DIAGRAM 2 SLOT 1 CONNECTOR 3,4,5,6 CLK SYNTHESIZER 7 82443GX 8,9,10 FET SWITCHES 11,12 DIMM SOCKETS 13,14,15,16

Contextual Info: TPS542951 www.ti.com SLVSBI4B – JULY 2012 – REVISED OCTOBER 2013 2A/3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS542951 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • •

Contextual Info: TPS542951 www.ti.com SLVSBI4A – JULY 2012 – REVISED APRIL 2013 2A/3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS542951 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • •

Contextual Info: TPS542951 www.ti.com SLVSBI4A – JULY 2012 – REVISED APRIL 2013 2A/3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS542951 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • •

PS54395

Contextual Info: TPS54395 www.ti.com SLVSBC8A – JUNE 2012 – REVISED MAY 2013 3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS54395 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • • •

PS54395

Contextual Info: TPS54395 www.ti.com SLVSBC8A – JUNE 2012 – REVISED MAY 2013 3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS54395 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • • •

Vo115

Contextual Info: TPS54295 SLVSB01 – OCTOBER 2011 www.ti.com 2A Dual Channel Synchronous Step-Down Switcher with Integrated FET SWIFT Check for Samples: TPS54295 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • D-CAP2™ Control Mode

Contextual Info: TPS54495 www.ti.com SLVSBH0A – JUNE 2012 – REVISED MAY 2013 4A/2A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS54495 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • •

PS54495

Contextual Info: TPS54495 www.ti.com SLVSBH0A – JUNE 2012 – REVISED MAY 2013 4A/2A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS54495 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • •

2n3904, itt

Abstract: 2222n philips r360 A102 A106 A107 C103 C109 C114 foxconn schematic diagram UPS 1060 fet dd51 J241 ND R315
Contextual Info: A 4 B 2 D E Intel 100 MHz Pentium tm II processor/440BX AGPset Dual Processor Customer Reference Schematics Revision 1.0 4 PAGE TITLE 3 C COVER SHEET 1 BLOCK DIAGRAM 2 SLOT 1 CONNECTOR 3,4,5,6 CLK SYNTHESIZER 7 82443BX 8,9,10 FET SWITCHES 11,12 DIMM SOCKETS

J307 FET

Abstract: J307 transistor c35 equivalent IM335
Contextual Info: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for

125C42

Contextual Info: SEMICONDUCTOR CORPORATION Advance Product Information s d h / s o n e t 2.5Gbits/sec VSC7926 Laser Diode Driver Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data Direct Access to Modulation and Bias FET’s