FET CROSSREF Search Results

MARKING code VO SMD fet

Abstract: marking cdm smd 2a 3 PIN fet FET Design Catalog
Contextual Info: INTEGRATED CIRCUITS CBT3125 Quadruple FET bus switch Product data File under Integrated Circuits — ICL03 Philips Semiconductors 2001 Dec 12 Philips Semiconductors Product data Quadruple FET bus switch CBT3125 DESCRIPTION PIN CONFIGURATION The CBT3125 quadruple FET bus switch features independent line

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

LCB114

Abstract: LH136 IL485 ocm246 AC/DC drive PLA114 OCM22A OCMS246 ps7113 OCM243
Contextual Info: 2. OCMOS FET CROSS-REFERENCE 50 GBB-SB-0808 2. OCMOS FET CROSS-REFERENCE 2-1. MATSUSHITA ELECTRIC WORKS MATSUSHITA ELECTRIC WORKS 1 MATSUSHITA ELECTRIC PKG WORKS OUTPUT *1 Type VL IL PT Ron ton/toff (V) (mA) (mW) (Ω) (ms) MAX. MAX. MAX. MAX. MAX. Type Number

transistor smd code marking 561

Abstract: BUK9575-100A Philips transistor guide FET Transistor Guide
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9575-100A BUK9675-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using

FJN598J

Contextual Info: FJN598J FJN598J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic TO-92 1 1. Source 2. Gate 3. Drain Si N-channel Junction FET

Contextual Info: KSK596 KSK596 Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic TO-92S 1 1.Source 2. Gate 3. Drain Si N-channel Junction FET

Contextual Info: SN54CBT16209, SN74CBT16209A 18ĆBIT FET BUSĆEXCHANGE SWITCHES SCDS006O − NOVEMBER 1992 − REVISED NOVEMBER 2004 D Members of the Texas Instruments D D SN54CBT16209 . . . WD PACKAGE SN74CBT16209A . . . DGG, DGV, OR DL PACKAGE TOP VIEW Widebus  Family

Contextual Info: KSK595 KSK595 Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 3 2 1 SOT-23 1.Drain 2. Source 3. Gate Si N-channel Junction FET

Contextual Info: FJZ594J FJZ594J Capacitor Microphone Applications 3 • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-623F 1. Drain 2. Source 3. Gate Si N-channel Junction FET

Contextual Info: SN74CBTLV3857 LOWĆVOLTAGE 10ĆBIT FET BUS SWITCH WITH INTERNAL PULLDOWN RESISTORS SCDS085E − OCTOBER 1998 − REVISED OCTOBER 2003 D Enable Signal Is SSTL_2 Compatible D Flow-Through Architecture Optimizes PCB DBQ, DGV, DW, OR PW PACKAGE TOP VIEW Layout

PHB101NQ03LT

Abstract: "thermal via" PCB D2PAK "thermal via" PCB D-PAK
Contextual Info: PHB/PHD101NQ03LT TrenchMOS logic level FET Rev. 02 — 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB101NQ03LT in SOT404 D2-PAK

5N 3011

Abstract: VID 200-12 cd 4003 nasa group N15Y 1HA 104
Contextual Info: MIL—M—38510/114A 9 November 1979 SUPERSEDING MIL-M-38510/114 25 April 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This specification is approved for use by all Departroents and Agencies of the Department of Defense.

Contextual Info: PHP/PHU101NQ03LT TrenchMOS logic level FET Rev. 02 — 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 TO-220AB

CAPACITOR MICROPHONE

Contextual Info: FJX597J FJX597J Capacitor Microphone Applications 3 • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 Marking: SCH 1. Drain 2. Source 3. Gate Si N-channel Junction FET

2SK2396A

Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The

Contextual Info: SN54CBT16244, SN74CBT16244 16-BIT FET BUS SWITCHES SCDS031I – MAY 1996 – REVISED OCTOBER 2000 D D D D Members of Texas Instruments’ Widebus  Family Standard ’16244-Type Pinout 5-Ω Switch Connection Between Two Ports TTL-Compatible Input Levels

Contextual Info: SN54CBT3383, SN74CBT3383 10ĆBIT FET BUSĆEXCHANGE SWITCHES SCDS003O − NOVEMBER 1992 − REVISED JULY 2004 D 5-Ω Switch Connection Between Two Ports D TTL-Compatible Input Levels SN54CBT3383 . . . JT OR W PACKAGE SN74CBT3383 . . . DB, DBQ, DGV, DW, OR PW PACKAGE

ACEQ100

Contextual Info: DRV3202-Q1 www.ti.com SLVSBJ4A – OCTOBER 2012 – REVISED DECEMBER 2012 3-Phase Brushless Motor Driver Check for Samples: DRV3202-Q1 FEATURES DESCRIPTION • The DRV3202-Q1 device is a field effect transistor FET pre-driver designed for 3-phase motor control

MODEM STU SIEMENS

Abstract: 1017 ad hen nv LM 1875 AUDIO IC Data sheet KT 8275 earthquake Detection systems japan servo KH 56 lm step-down sot-23-5 input LA 7376 Shortform Data and Cross References diode D9816
Contextual Info: Analog Dialogue A forum for the exchange of circuits, systems, and software for real-world signal processing INTEGRATED ANALOG FRONT-ENDS PROCESS SIGNALS FROM CCD CHIPS page 5 X-FET Voltage References: Low Noise, Low Power, Better than Bandgap (page 3)

DRV3202-Q1

Abstract: ACEQ100
Contextual Info: DRV3202-Q1 www.ti.com SLVSBJ4A – OCTOBER 2012 – REVISED DECEMBER 2012 3-Phase Brushless Motor Driver Check for Samples: DRV3202-Q1 FEATURES DESCRIPTION • The DRV3202-Q1 device is a field effect transistor FET pre-driver designed for 3-phase motor control

Contextual Info: DRV3202-Q1 www.ti.com SLVSBJ4A – OCTOBER 2012 – REVISED DECEMBER 2012 3-Phase Brushless Motor Driver Check for Samples: DRV3202-Q1 FEATURES DESCRIPTION • The DRV3202-Q1 device is a field effect transistor FET pre-driver designed for 3-phase motor control

5N 3011

Abstract: PSRI
Contextual Info: MIL-M—38510/114A 9 November 1979 SUPERSEDING MIL-M-38510/114 25 April 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This specification is approved for use by all De­ partments and Agencies of the Department of Defense.

Contextual Info: SN74CBTLV16800 LOW-VOLTAGE 20-BIT FET BUS SWITCH WITH PRECHARGED OUTPUTS www.ti.com SCDS045J – DECEMBER 1997 – REVISED MARCH 2005 FEATURES • • • • • • • DGG, DGV, OR DL PACKAGE TOP VIEW Member of the Texas Instruments Widebus Family

CDFP2-F10

Abstract: M38510/10101 m38510/11401 GDFP1-F10 E43 marking MIL-STD-883 method 5003 macy1-x8
Contextual Info: INCH-POUND MIL-M-38510/114B 20 August 2003 SUPERSEDING MIL-M-38510/114A 09 November 1979 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, BI-FET OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON Reactivated after 20 August 2003 and may be used for either new or existing design acquisitions.