FET DIODE DATE SHEET Search Results
FET DIODE DATE SHEET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CUZ30V |
![]() |
Zener Diode, 30 V, USC |
![]() |
||
CUZ24V |
![]() |
Zener Diode, 24 V, USC |
![]() |
||
CUZ36V |
![]() |
Zener Diode, 36 V, USC |
![]() |
||
CUZ20V |
![]() |
Zener Diode, 20 V, USC |
![]() |
||
CEZ6V8 |
![]() |
Zener Diode, 6.8 V, ESC |
![]() |
FET DIODE DATE SHEET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
K638
Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
|
OCR Scan |
BUK638-1000A/B 0G44744 BUK638 -1000A -1000B K638-1OOOA/B 711Gfi5b 04M74L K638 transistor S52 DIODE 1000a fet 1000A | |
Contextual Info: Philips Components Data sheet status Product specification date of issue March 1991 BUK627-500B PowerMOS transistor Fast recovery diode FET P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a |
OCR Scan |
BUK627-500B | |
K638
Abstract: idm 73
|
OCR Scan |
BUK638-800A/B 711Gfl2b BUKS38 -800A K638-800A/B K638 idm 73 | |
Contextual Info: - P 3 9-/ÎS Data sheet status Preliminary specification date of issue March 1991 BUK638-1000A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a |
OCR Scan |
BUK638-1000A/B 7110fiEb BUK638 BUK638-10OOA/B | |
PMF3800SN
Abstract: 03ab09
|
Original |
PMF3800SN OT323 SC-70) PMF3800SN 03ab09 | |
BUK7C06-40AITEContextual Info: BUK7C06-40AITE N-channel TrenchMOS standard level FET Rev. 04 — 23 June 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using TrenchMOS technology, featuring very low on-state resistance and including |
Original |
BUK7C06-40AITE BUK7C06-40AITE | |
PMV65XPContextual Info: PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 — 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features |
Original |
PMV65XP PMV65XP | |
2N7002FContextual Info: 2N7002F N-channel TrenchMOS FET Rev. 02 — 9 May 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible |
Original |
2N7002F mbb076 2N7002F | |
PHB33NQ20T
Abstract: PHP33NQ20T
|
Original |
PHP/PHB33NQ20T PHB33NQ20T PHP33NQ20T | |
Contextual Info: PMV65XP P-channel TrenchMOS extremely low level FET Rev. 01 — 28 September 2004 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features |
Original |
PMV65XP 003aaa671 771-PMV65XP-T/R PMV65XP | |
1.4944
Abstract: 2N7002E
|
Original |
2N7002E mbb076 1.4944 2N7002E | |
PMWD16UNContextual Info: PMWD16UN Dual N-channel µTrenchMOS ultra low level FET Rev. 02 — 24 March 2005 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. |
Original |
PMWD16UN PMWD16UN | |
PH7030LContextual Info: PH7030L N-channel TrenchMOS logic level FET Rev. 04. — 7 March 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. 1.2 Features |
Original |
PH7030L PH7030L | |
15218
Abstract: 15218 pin details SOT323 FET N PMF3800SN
|
Original |
PMF3800SN OT323 15218 15218 pin details SOT323 FET N PMF3800SN | |
|
|||
PHX18NQ11TContextual Info: PHX18NQ11T N-channel TrenchMOS standard level FET Rev. 02 — 24 March 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a fully isolated plastic package using TrenchMOS™ technology. |
Original |
PHX18NQ11T PHX18NQ11T | |
03aa03
Abstract: 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application
|
Original |
2N7002 mbb076 03aa03 2N7002 SOT23 data sheet transistor 2n7002 philips 2n7002 2n7002 philips equivalent of 2N7002 2n7002-1 "Field Effect Transistor" 2N7002 equivalent 2N7002* application | |
PH16030LContextual Info: PH16030L N-channel TrenchMOS logic level FET Rev. 01 — 24 February 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. |
Original |
PH16030L PH16030L | |
PH3120LContextual Info: PH3120L N-channel TrenchMOS logic level FET Rev. 02 — 20 January 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. |
Original |
PH3120L PH3120L | |
PMV117EN215
Abstract: PMV117EN
|
Original |
PMV117EN mbb076 771-PMV117EN215 PMV117EN PMV117EN215 | |
PHP75NQ08TContextual Info: PHP75NQ08T N-channel TrenchMOS standard level FET Rev. 01 — 13 April 2005 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. |
Original |
PHP75NQ08T PHP75NQ08T | |
PHD 73
Abstract: PHU108NQ03LT phb108nq03lt PHD108NQ03LT PHP108NQ03LT PHB108
|
Original |
PHB/PHD/PHU108NQ03LT PHD 73 PHU108NQ03LT phb108nq03lt PHD108NQ03LT PHP108NQ03LT PHB108 | |
PHP45NQ15T
Abstract: PHB45NQ15T
|
Original |
PHP/PHB45NQ15T PHP45NQ15T PHB45NQ15T | |
PMWD20XNContextual Info: PMWD20XN Dual N-channel µTrenchMOS extremely low level FET Rev. 02 — 26 April 2005 Product data sheet 1. Product profile 1.1 General description Dual common drain N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology. |
Original |
PMWD20XN PMWD20XN | |
PMWD26UNContextual Info: PMWD26UN Dual N-channel µTrenchMOS ultra low level FET Rev. 02 — 19 May 2005 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features |
Original |
PMWD26UN PMWD26UN |