FET LOW NOISE Search Results

MGF1402B

Abstract: MGF1402
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC

MGF1303B

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1303B LOW NOISE GaAs FET MITSUBISHI ELECTRIC

MGF1403B

Abstract: GaAs FET
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET MITSUBISHI ELECTRIC

MGF1302

Abstract: gaas fet "GaAs FET" Low Noise Gaas
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET MITSUBISHI ELECTRIC

amplifiers

Abstract: Low Noise Amplifiers Medium Power Amplifiers power amplifiers
Contextual Info: A m plifier s Contents PAGE Broadband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers Limiting Amplifiers # • ,«11». Narrowband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers . 139 Module GaAs FET Amplifiers

3SK165A

Abstract: 3SK165A-0 3SK165A-1 nf 820
Contextual Info: 3SK165A GaAs N-channel Dual Gate MES FET Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation

6323 GA

Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE

3SK165A

Abstract: 3SK165A-1 3SK165A-0
Contextual Info: 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation

D450 Nchannel

Abstract: C10535E NE76118 NE76118-T1 NE76118-T2 NEC 3536
Contextual Info: DATA DATA SHEET SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS NE76118 is a n-channel GaAs MES FET housed in MOLD package. in millimeters FEATURES 2.1±0.2 1.25±0.1 • Low noise figure PACKING STYLE

mgf1908

Abstract: MGF1908A MGF1303B
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1908A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1908A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and

NEC 3536

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •

MGF1908A

Contextual Info: June/2004 June/2004 June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1908A TAPE CARRIER LOW NOISE GaAs FET MITSUBISHI ELECTRIC June/2004

MGF1907

Abstract: MGF1907A mgf1302 MGF1302 equivalent
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1907A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1907A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and

Contextual Info: GaAs Devices • Hyper FET Hetero Structured InGaAs FET . 6 • Ultra-Low Noise Hyper F E T . 6 ■ RF Integrated • Wide-Band, Low-Noise A m plifiers. 6

MGF1903B

Abstract: MGF1303B 903b mgf1903
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CA RR IER LOW NOISE GaAs FET DESCRIPTION The M G F1903B is a low noise GaAs FET w ith an N-channel Schottky gate, which is designed fo r use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package

fet K 793

Abstract: MGF1402 cdb 838 S22VS MGF1402B Q017 91 569 775 -35 S 30ria
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> • b24tlfl2ti 0017040 b47 ■ MGF1402B LOW NOISE GaAs FET DESCRIPTION OU TLINE DRAWING The MGF1402B low-noise GaAs FET w ith an N-channel Schottky gate is designed fo r use in S to X band ampli­ fiers and oscillators. The hermetically sealed metalceramic

MGF1907A

Abstract: MGF1907
Contextual Info: June/2004 June/2004 June/2004 June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1907A TAPE CARRIER LOW NOISE GaAs FET MITSUBISHI ELECTRIC June/2004

063 793

Abstract: transistor v63
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain

Contextual Info: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A " f C O ^ IflfUUf ^ J-FET INPUT LOW-NOISE OPERATIONAL AMPLIFIER The TA75071P is a J-FET input low-noise operational amplifier with low input bias and offset current, fast slew rate and wide bandwidth.

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

817 CN

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1903B TARE CARRIER LOW NOISE GaAs FET D E S C R IP T IO N The MGF1 9 0 3 B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to X band ampli­ fiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1 902 B is a low noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and