FET MARKING MT Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package  Overview  Features  Marking Symbol: PK

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627A Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview  Features  Marking Symbol: QK

Contextual Info: MTM861280LBF MTM861280LBF Silicon P-channel MOS FET Unit: mm For switching „ Features y Low drain-source ON-state Resistance:RDS on typ. = 300 mΩ（VGS = -4.0 V) y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) „ Marking Symbol: ML

mtm861270

Abstract: MTM86127 mtm13127
Contextual Info: Doc No. TT4-EA-10304 Revision. 2 Product Standards MOS FET MTM861270LBF MTM861270LBF Silicon P-channel MOSFET Unit : mm For Switching 1.6 0.2 MTM13127 in WSSMini6 type package 0.13 6 5 4 1 2 3 • Features  Marking Symbol : MK 1.4 1.6  Low Drain-source On-state Resistance : RDS on typ = 80 m  (VGS = -4 V)

f101g

Abstract: 362 marking code sot 23-6 sot89 Marking code 2106 MARKING CODE 51 5 fet sot-89 GaAS fet sot89 C5 MARKING CODE SOT-89 SOT89 FET marking 139Q High Dynamic Range FET sot-89
Contextual Info: FP101 The Communications Edge TM Product Information High Dynamic Range FET Product Features x 50 – 3000 MHz x 13.5 dB Gain x +26 dBm P1dB x +37 dBm OIP3 x 2.0 dB Noise Figure x MTTF > 100 years x Lead-free/Green/RoHScompliant SOT-89 Package Product Description

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM76720 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky

Contextual Info: Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF MTMC8E2A0LBF Gate Resistor installed Dual N-Channel MOS Typ Unit: mm 2.9 For lithium-ion secondary battery protection circuit 0.3 8 7 6 5 1 2 3 4 0.16 2.4 2.8 • Features  Low drain-source On-state Resistance

MTM76720

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits M Di ain sc te on na tin nc ue e/ d • Package

marking JE FET

Abstract: MTM86727
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits M Di ain sc te on na tin nc ue e/ d • Package

MTM15624

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM15624 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits • Package  Overview  Code Mini5-G1  Pin Name 1: Cathode 2: Drain

Contextual Info: Doc No. TT4-EA-13636 Revision. 4 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4.0 V)  Low drive voltage: 1.8 V drive

Contextual Info: Doc No. TT4-EA-13115 Revision. 2 Product Standards MOS FET MTM232270LBF MTM232270LBF Silicon N-channel MOS FET Unit : mm For switching MTM13227 in SMini3 type package 2.0 0.3 • Features 0.15 3 1.25 2.1  Low drain-source On-state resistance : RDS on typ = 85 m  (VGS = 4.0 V)

Contextual Info: Doc No. TT4-EA-12901 Revision. 3 Product Standards MOS FET MTM232230LBF MTM232230LBF Silicon N-channel MOS FET Unit : mm For switching 2.0 0.3 • Features 0.15 3 1.25 2.1  Low drain-source On-state resistance : RDS on typ = 20 m  (VGS = 4.0 V)  Low drive voltage: 2.5 V drive

Contextual Info: Doc No. TT4-EA-13636 Revision. 3 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4.0 V)  Low drive voltage: 1.8 V drive

Mtm76320

Abstract: MTM7632
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Package  Overview MTM76320 is the composite MOS FET (N-channel and P-channel MOS

mtm76325

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . MTM76325 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package MTM76325 is the composite MOS FET (N-channel and P-channel MOS

FET MARKING CODE

Abstract: MTM86627A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627A Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Code WSSMini6-F1  Pin Name

Contextual Info: Doc No. TT4-EA-14584 Revision. 2 Product Standards MOS FET MTM131230BBF MTM131230BBF Silicon P-channel MOSFET Unit : mm 2.9 For switching 0.4 0.16 3 • Features 1.5 2.8  Low drain-source ON resistance : RDS on typ. = 40 m  ( VGS = -4.0 V )  Halogen-free / RoHS compliant

8641 6 pin SOT

Abstract: FH1G GL 7837 fh1 sot-89 marking code GaAS fet sot89
Contextual Info: FH1 The Communications Edge TM High Dynamic Range FET Product Features • • • • • • • 50 – 3000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF > 100 years

Contextual Info: Doc No. TT4-EA-12099 Revision. 2 Product Standards MOS FET MTM684100LBF MTM684100LBF Dual P-channel MOSFET Unit: mm 2.9 For switching 0.3 8 7 6 5 1 2 3 4 2.4 2.8 • Features  Low drain-source On-state Resistance RDS on typ. = 32 m (VGS =-4.0 V)  Low drive voltage:1.8V drive

MTM761100L

Contextual Info: Doc No. TT4-EA-10443 Revision. 2 Product Standards MOS FET MTM761100LBF MTM761100LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.2 0.13 6 5 4 1 2 3 • Features 1.7 2.1  Low Drain-source On-state Resistance : RDS on typ. = 30 m (VGS = -4.0 V)

Contextual Info: Doc No. TT4-EA-10241 Revision. 2 Product Standards MOS FET MTM982400BBF MTM982400BBF Silicon N-channel MOSFET Unit: mm 5.0 For switching 0.4 8 7 6 5 1 2 3 4 5.0 6.0 • Features  Low drain-source On-state Resistance RDS on typ = 29 m (VGS = 5.0 V)  Halogen-free / RoHS compliant