FET MIXER Search Results
FET MIXER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TRF37C32IRTVT |
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1700M-3800MHz Dual Down Converter Mixer with Integrated IF Amp 32-WQFN -40 to 85 |
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| TRF37C32IRTVR |
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1700M-3800MHz Dual Down Converter Mixer with Integrated IF Amp 32-WQFN -40 to 85 |
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| TRF37B32IRTVR |
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700M-2700MHz dual Down Converter Mixer with Integrated IF Amp & RF Baluns 32-WQFN -40 to 85 |
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| TRF37A32IRTVT |
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400M-1700MHz Dual Down Converter Mixer with Integrated IF Amp & RF Baluns 32-WQFN -40 to 85 |
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| TRF37B32IRTVT |
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700M-2700MHz dual Down Converter Mixer with Integrated IF Amp & RF Baluns 32-WQFN -40 to 85 |
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FET MIXER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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155-0183Contextual Info: HMJ4 High Dynamic Range FET Mixer Product Features Product Description • +36 dBm IIP3 Functional Diagram The HMJ4 is a high dynamic range GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +36 dBm at an LO drive level of +17 |
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18-pin JESD22-C101 1-800-WJ1-4401 155-0183 | |
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Contextual Info: HMJ8 High Dynamic Range FET Mixer Product Features Product Description • +37 dBm IIP3 Functional Diagram The HMJ8 is a high dynamic range GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +37 dBm at an LO drive level of +18 |
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18-pin JESD22-C101 1-800-WJ1-4401 | |
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Contextual Info: HMJ2 High Dynamic Range FET Mixer Product Features Product Description • +37 dBm IIP3 Functional Diagram The HMJ2 is a high dynamic range GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +37 dBm at an LO drive level of +17 |
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18-pin JESD22-C101 1-800-WJ1-4401 | |
JESD22-A114
Abstract: gaas fet marking A
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18-pin JESD22-C101 1-800-WJ1-4401 JESD22-A114 gaas fet marking A | |
ov 2094Contextual Info: SONY 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-nolse amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features |
OCR Scan |
3SK165A 800MHz 3SK165A M-254 ov 2094 | |
SGM2016AM
Abstract: SGM2016AP dual-gate
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SGM2016AM/AP SGM2016AM/AP SGM2016AM SGM2016AP 900MHz M-254 SGM2016AM SGM2016AP dual-gate | |
Sony Semiconductor M-281Contextual Info: SONY GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. |
OCR Scan |
SGM2014AN 900MHz 900MHz M-281 SGM2014AN M-281 Sony Semiconductor M-281 | |
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Contextual Info: SONY GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. |
OCR Scan |
SGM2014AM 900MHz SGM2014AM M-254 | |
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Contextual Info: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. |
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SGM2014AN SGM2014AN M-281 900MHz | |
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Contextual Info: SGM2014AM GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF |
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SGM2014AM SGM2014AM 900MHz M-254 | |
SGM2014AMContextual Info: SGM2014AM GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. |
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SGM2014AM SGM2014AM 900MHz M-254 | |
SGM2014ANContextual Info: SGM2014AN GaAs N-channel Dual Gate MES FET Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. |
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SGM2014AN SGM2014AN M-281 900MHz | |
3SK165A
Abstract: 3SK165A-0 3SK165A-1 nf 820
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3SK165A 3SK165A 800MHz M-254 3SK165A-0 3SK165A-1 nf 820 | |
"GaAs N-channel Dual Gate"
Abstract: SGM2014AN Sony Semiconductor M-281
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SGM2014AN SGM2014AN M-281 900MHz "GaAs N-channel Dual Gate" Sony Semiconductor M-281 | |
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N-Channel, Dual-Gate FET
Abstract: SGM2014AM
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SGM2014AM SGM2014AM 900MHz M-254 N-Channel, Dual-Gate FET | |
SGM2013N
Abstract: transistor frequency 1.5GHz gain 20 dB dual-gate
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SGM2013N SGM2013N M-281 900MHz, transistor frequency 1.5GHz gain 20 dB dual-gate | |
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Contextual Info: HMC216MS8 MICROWAVE CORPORATION GaAs MMIC SMT DOUBLE-BALANCED FET MIXER 1.3 - 2.5 GHz FEBRUARY 2000 Midband Performance General Description IP3 INPUT : +25 dBm @ +11 dBm LO The HMC216MS8 is an ultra miniature doublebalanced FET mixer in an 8 lead plastic surface |
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HMC216MS8 HMC216MS8 | |
SGM2016AN
Abstract: dual-gate
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SGM2016AN SGM2016AN M-281 900MHz dual-gate | |
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Contextual Info: SONY SGM2014AN GaAs N-channel Dual Gate MES FET Preliminary Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF |
OCR Scan |
SGM2014AN SGM2014AN 900MHz M-281 JO-651 | |
3SK165A
Abstract: 3SK165A-1 3SK165A-0
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3SK165A 3SK165A 800MHz M-254 3SK165A-1 3SK165A-0 | |
HMJ7
Abstract: CATV HEADEND JESD22-A114
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22-pin JESD22-C101 1-800-WJ1-4401 HMJ7 CATV HEADEND JESD22-A114 | |
HMC216MS8Contextual Info: HMC216MS8 MICROWAVE CORPORATION GaAs MMIC SMT DOUBLE-BALANCED FET MIXER 1.3 - 2.5 GHz SEPTEMBER 1999 Midband Performance General Description IP3 INPUT : +25 dBm @ +11 dBm LO The HMC216MS8 is an ultra miniature doublebalanced FET mixer in an 8 lead plastic surface |
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HMC216MS8 HMC216MS8 | |
SGM2016AN
Abstract: dual-gate SGM2016 N-Channel, Dual-Gate FET
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SGM2016AN SGM2016AN M-281 900MHz dual-gate SGM2016 N-Channel, Dual-Gate FET | |
dual-gateContextual Info: SONY SGM2016AM/AP GaAs N-channel Dual-Gate MES FET Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-nolse amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, |
OCR Scan |
SGM2016AM/AP SGM2016AM/AP 900MHz SGM2016AM M-254 SGM2016AP M-255 dual-gate | |