FET PR 32 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> pRÖ-Vn w>»'5n!>“ * M GFC42V6472A rV .;fvc^'on arS wc 6.4~ 7.2G H z BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION TheM G FC 42V6472Aisan internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2

KGF1607

Abstract: K1607 8958 fet 3773 SMD
Contextual Info: Pr E2Q0041-27-X3 im el in KGF1607 ar y ¡ electronic components KGF1607 ¡ electronic components This version: Jan. 1998 Previous version: Jun. 1996 Power FET Ceramic Package Type GENERAL DESCRIPTION The KGF1607, housed in a SMD type ceramic package, is a discrete GaAs power FET that features

KGF1658

Abstract: IS-54 ACP60 K1658
Contextual Info: E2Q0043-27-X2 Pr im el ar KGF1658 in y ¡ electronic components KGF1658 ¡ electronic components This version: Jan. 1998 Previous version: Jun. 1996 Power FET Ceramic Package Type GENERAL DESCRIPTION The KGF1658, housed in a SMD-type ceramic package, is a discrete GaAs power FET that features

microwave fet

Contextual Info: TGF1350-SCC LOW-NOISE MICROWAVE FET AP PR O VAL 5079 0.5 |am x 300 |am FET 1.5-dB Noise Figure With 11-dB Associated Gain at 10 GHz 2.5-dB Noise Figure With 7-dB Associated Gain at 18 GHz Ail-Gold Metallization for High Reliability Recessed Gate Structure

Contextual Info: Preliminary data SIEMENS BTS611 TWO CHANNEL PRO FET D escrip tion PR O FET R an in telligen t p o w e r switch w ith in tegrated Two independent high-side switches Overtem perature protection for each channel Overload protection for each channel Short circuit protection by overtemperature protection

MGFC36V3742A

Abstract: 42GH 12api
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V3742A pRÔrîî oot^St«SS^,;Cha"9e' 'C-3^' .u îir t C 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET D ESC RIPTIO N O U TLIN E DRAW IN G The MGFC36V3742A is an internally impedance-matched U n it : m illim eters inch e s)

SGM5102F

Abstract: e9024 lD-10mA
Contextual Info: SONY C O R P / C O M P O N E N T PR OD S 0302303 0003101 T « S O N Y MTE D SGM5102F SONY. GaAs N-chanpel Microwave MES FET Description The SGM5102F is an N-channel GaAs ME$ FET designed for low noise amplifiers from C to Ku bands. SGM5102F-T6 is for taping.

Contextual Info: TGS8122-SCC 8- TO 11-GHz SPDT FET SWITCH AP PR O VAL 5074 • 0.9-dB Typical Insertion Loss • 40-dB Typical Isolation at 9 GHz • 1.5:1 Typical Input SWR at Midband, 1.4:1 Typical Output SWR at Midband

T572S

Abstract: tv sony 1435 J50 O 26 dual-gate 17458 3SK147
Contextual Info: 77 SO N Y C O R P / C O M P O N E N T PR O D S DE 1ñ3fl23fl3 OOOOEEfl fl | ~ 0 ^ 3 1 ’* 2 5 GaAs N-channel Dual-Gate MES FET D e scrip tio n : The 3SK147 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise, high gain

3SK164

Abstract: UV 615 TUNER tuner uv 915 e tv sony 1435 tuner uv 915 3sk164-M TA 7332 tuner uv 615 dual-gate 3539 sony
Contextual Info: SONY C O R P / C O M P O N E N T PR OD S IflE D • 0305303 00051^4 3SK164/-M SO N Y GaAs N-Channel Dual-Gate MES FET t P ack a g e O utline Description The 3SK 164 /-M is a G aAs N-channel Dual-Gate M ES FET for low noise U H F amplifiers and mixers. Low noise,

PROFET-. Semiconductor Group

Abstract: Q67060 650P BTS650P Q67060-S6308-A2 INV55
Contextual Info: S IE M E N S PR O FET BTS650P Smart Highside High Current Power Switch Features • • • • • • • • • • • • • Product Sum m ary O vervoltage protection Output clamp Operating voltage On-state resistance Overload protection Current limitation

TL 130 0837

Contextual Info: TGS8250-SCC DC TO 18-GHz SPDT FET SWITCH AP PR O VAL 5026 • 2-dB Typical Insertion Loss • 39-dB Typical Isolation Across Band • 2-ns Rise/Fall Time • 50-|jA Typical Current Consumption With Control Voltage of - 7 V, 0 V • Size: 1,8034x1,2700x0,1016 mm

Contextual Info: CU R AG RL-2260 Y FET US ENCY AP ED SA O PR V ALL IN ONE POWER TRANSFORMERS This series is manufactured to meet UL, CSA, VDE and This series is manufactured to meet UL, CSA, IEC specifications. Low interwinding capacitance and the VDE and IEC specifications. Low interwinding

Contextual Info: US CU R AG RL-2271 Y FET SA ENCY AP ED O PR V RLD-2271 TWO IN ONE TRIPLE OUTPUT POWER TRANSFORMERS • CHASSIS MOUNT The RL-2271 and RLD-2271 Series Power Transformers have a triple output designed for 5VDC and ±12VDC or ±15VDC regulated power supplies. These transformers with

Contextual Info: TGS8704-SCC DC TO 6-GHz FET SWITCH AP PR O VAL 5026 • Absorptive Topology • 1.2-dB Insertion Loss and 45-dB Isolation at Midband • 1.3:1 Input SWR and 1.2:1 Output SWR at Midband • Greater Than 0.5-W Input Power at 1-dB Compression • Size: 1,092 x 0,990 x 0,152 mm

HMC216MS8

Contextual Info: HMC216MS8 / 216MS8E v02.0705 10 GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC216MS8 / HMC216MS8E is ideal for: Input IP3: +25 dBm @ +11 dBm LO • Base Stations LO Range = +3 to +11 dBm

FT6110D

Abstract: FT6110
Contextual Info: January 1990 Edition 1.1 C P FUJITSU PR O D U C T P R O F IL E - FT6110, FT6110D Power MOS FET Arrays Silicon N-channel Enhancement Mode Power M O S F E T Arrays A B S O L U T E M A X IM U M R A T IN G S Rating <Ta=25°C Drain Source Voltage Value V Dss

Contextual Info: Voltage Regulators AN30210A Power supply control IC for a digital still camera • Overview Unit: mm ■ Features 9.00±0.20 7.00±0.20 48 33 32 64 17 9.00±0.20 y 16 1.40±0.10 1 0.40 0.16+0.10 –0.05 1.00 Seating plane 0.10±0.10 0.15 +0.10 –0.05 (0.50)

TR218

Contextual Info: Voltage Regulators AN30210A Power supply control IC for a digital still camera • Overview Unit: mm ■ Features 9.00±0.20 7.00±0.20 48 33 32 64 17 9.00±0.20 y 16 1.40±0.10 1 0.40 0.16+0.10 –0.05 1.00 Seating plane 0.10±0.10 0.15 +0.10 –0.05 (0.50)

72V32

Abstract: AN30210A MO301
Contextual Info: Voltage Regulators AN30210A Power supply control IC for a digital still camera • Overview Unit: mm 9.00±0.20 7.00±0.20 48 33 32 64 17 0.16+0.10 –0.05 0.15 0.10±0.10 0° to10° 0.50±0.25 LQFP064-P-0707 in • Operating supply voltage range: 1.5 V to 7.2 V

XA008-A

Abstract: FET PR 32 nichicon pr F9312
Contextual Info: Rev.2.1_00 升压 600kHz PWM 控制PWM / PFM 切换控制 内置 FET DC/DC 控制器 多芯片封装 S-83M355/83M356 系列是 由基准电压源、振荡电路、误差放大 器、相位补偿电路、PWM 控制电路(S-83M355)、PWM / PFM 切换 控制电路(S-83M356)等构成的 CMOS 升压 DC/DC 控制器与功率

Contextual Info: MITSUMI Protection for Lithium-Ion/Lithium Polymer Batteries 1 cell MM3099 Series Protection for Lithium-Ion/Lithium Polymer Batteries (1 cell) Monolithic IC MM3099 Series April 26, 2004 Outline ts This is a protection IC developed for use with 1-serial cell lithium-ion/lithium polymer rechargeable batteries.

ENI 409

Abstract: mrc 224 24V to 3.6V opto coupler mrc 520 IRFR120 X80000 X80010 710 opto coupler resistor 10m MRC 450
Contextual Info: X80010/11/12/13 New Industry Features – – – – Programmable Power Sequencing modes Battery backup mode Hardshort retry Quad voltage enable inputs Hot Swap and Power Sequence Controller APPLICATIONS • Hot swap controller — Overvoltage and undervoltage protection

icl7644

Contextual Info: ICL7644, ICL7645 ÌCL7646, ICL7647 H A R R IS S E M I C O N D U C T O R Low Voltage Step-Up Converters May 1992 Features Description • +5V at 40mA From a 1.5V Source The ICL7644, ICL7645 and ICL7646 are low power fixed +5V output step-up DC-DC converters designed for