FET TO251 Search Results

pa1556ah

Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Contextual Info: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3507 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3507 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,

d1593

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3635 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3635 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and

d1333

Abstract: 2SK3113 2SK3113-Z 2SK3113 equivalent
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristic, and 2SK3113

PHU97NQ03LT

Contextual Info: PHU97NQ03LT N-channel TrenchMOS logic level FET Rev. 01 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY

nq03lt

Abstract: PHP101NQ03LT NQ03LT-01 PHU101NQ03LT
Contextual Info: PHP/PHU101NQ03LT N-channel TrenchMOS logic level FET Rev. 03 — 17 November 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.

2SK3113 equivalent

Abstract: 2SK3113 2SK3113-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features PART NUMBER PACKAGE a low gate charge and excellent switching characteristic, and 2SK3113

PHD 73

Abstract: PHD77NQ03T PHU77NQ03T jeita To-252
Contextual Info: PHD/PHU77NQ03T N-channel TrenchMOS FET Rev. 01 — 28 November 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Fast switching

PHD78NQ

Abstract: PHD78NQ03LT PHP78NQ03LT PHU78NQ03LT PHD78NQ03L SOT533 y 546 SOT-533
Contextual Info: PHU/PHD78NQ03LT N-channel TrenchMOS logic level FET Rev. 05 — 27 July 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology.

d1593

Abstract: 2SK3634 2SK3634-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3634 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications

k3113

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2S K 3113 is N-channel DMOS FET device that features a ORDERING INFORMATION Part Number low gate charge and excellent switching characteristics, and

2SK3634-Z

Abstract: D1593
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3634 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications

d1878

Abstract: D1857 2SK4070 2SK4070-S15-AY 2SK4070-ZK-E1-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

2SK4080

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4080 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK4080 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as

D1806

Abstract: 2SK3113B 2SK3113B-S15-AY 2SK3113B-ZK-E2-AY transistor types full 2SK3113B-ZK-E1-AY MP 6102
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4070 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

2SK3113

Abstract: 2SK3113 equivalent 2SK3113-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3113 is N-channel DMOS FET device that PART NUMBER PACKAGE 2SK3113 TO-251 2SK3113-Z TO-252 features a low gate charge and excellent switching

d1878

Abstract: d18785ej2v0ds 2SK4081 2SK4081-S15-AY 2SK4081-ZK-E1-AY 2SK4081-ZK-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4081 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4081 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.

D1637

Abstract: 2SK3712 2SK3712-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3712 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.

2SK3113 equivalent

Abstract: 2SK3113 2SK3113-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3113 is N-channel DMOS FET device that features a ORDERING INFORMATION low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power

D1637

Abstract: 2SK3712 2SK3712-Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3712 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.

D1637

Abstract: 2SK3712 2SK3712-Z 2SK3712Z
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3712 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3712 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.