FETS BOOKS Search Results

NEC DIE BONDER

Abstract: die-attach
Contextual Info: USER’S MANUAL NEC USER’S MANUAL FOR MICROWAVE DEVICE CHIP HANDLING [Silicon Transistors, GaAs FETs, H J-FETs, GaAs MMICs] 1. INTRODUCTION In recent years, m iniaturizing the dimensions o f electronic devices and improving device performance have been extensively

Gan transistor

Contextual Info: LM5113 LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs Literature Number: SNVS725D LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs General Description Features The LM5113 is designed to drive both the high-side and the

CAPACITOR 4700

Abstract: C10535E VP15-00-3
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16857 MONOLITHIC 6 channel H-BRIDGE DRIVER DESCRIPTION µPD16857 is monolithic 6 channel H-bridge driver employing power MOS FETs in the output stages. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers

PH41

Abstract: PH-11 PC2100AGF upc2100agf vm22a PH21 PH31 C10535E ph11
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16808 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16808 is a monolithic dual H bridge driver circuit which employing N-channel power MOS FETs for its driver stage. By using the power MOS FETs for the output stage, saturation voltage and power consumption are substantially

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16837 MONOLITHIC QUAD H-BRIDGE DRIVER DESCRIPTION The µPD16837 is a monolithic quad H-bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar

h-bridge n p mos

Abstract: 30-PIN h-bridge p n mos
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16837 MONOLITHIC QUAD H-BRIDGE DRIVER DESCRIPTION The µPD16837 is a monolithic quad H-bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar

30-PIN

Abstract: C10535E
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16837 MONOLITHIC QUAD H BRIDGE DRIVER DESCRIPTION The µPD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD16837 MONOLITHIC QUAD H BRIDGE DRIVER DESCRIPTION The /¿PD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar

PH21

Abstract: C10535E uPC2100 rx 2b
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16803 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage

en11a

Abstract: 5261B 30-PIN C10535E in1418 30-pin plastic SSOP nec nec en2
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16833A MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16833A is a monolithic quad H bridge driver IC which uses power MOS FETs in its driver stage. By using the MOS FETs in the output stage, this driver IC has a substantially improved saturation voltage and power consumption as

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16833A MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16833A is a monolithic quad H bridge driver IC which uses power MOS FETs in its driver stage. By using the MOS FETs in the output stage, this driver IC has a substantially improved saturation voltage and power consumption as

C10535E

Abstract: VP15-00-3 PD16818 8JG 36
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16818 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16818 is a monolithic dual H bridge driver IC which uses N-channel power MOS FETs in its output stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and

C10535E

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16833A MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16833A is a monolithic quad H bridge driver IC which uses power MOS FETs in its driver stage. By using the MOS FETs in the output stage, this driver IC has a substantially improved saturation voltage and power consumption as

20-PIN

Abstract: VP15-00-3
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD16818 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16818 is a monolithic dual H bridge driver IC which uses N-channel power MOS FETs in its output stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and

d16803

Abstract: S1145 S11452
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿ ¿ P D 1 6 8 3 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The /¿PD16803 is a m onolithic dual H bridge driver circuit which uses N-channelpower MOS FETs By em ploying the pow er MOS FETs for the output stage, this driver circuit has a substantially

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿ ¿ P D 16818 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The ¿¿PD16818 is a monolithic dual H bridge driver IC which uses N-channel power MOS FETs in its output stage. By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage and

smd transistor A1 HB

Abstract: omap hs smd driver fets
Contextual Info: LM5113 5A, 100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs General Description Features The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride GaN FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side

D16833A

Abstract: nec en2
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿P D 16833A MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT D E S C R IP T IO N The /¿PD16833A is a monolithic quad H bridge driver IC which uses power MOS FETs in its driver stage. By using the MOS FETs in the output stage, this driver IC has a substantially improved saturation voltage and power consumption as

nec d 882 p

Abstract: NEC 882 p nec en2
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD16833 MONOLITHIC QUAD H BRIDGE DRIVER CIRCUIT D E S C R IP T IO N The /¿PD16833 is a m onolithic quad H bridge driver IC which uses N-channel pow er MOS FETs in its driver stage. By using the MOS FETs in the output stage, this driver IC has a substantially im proved saturation voltage and power

d16808

Abstract: uPC2100
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT _ »PD16808 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT D E S C R IP T IO N The /¿PD16808 is a m onolithic dual H bridge driver circuit which em ploying N-channel pow er MOS FETs for its driver stage. By using the power MOS FETs for the output stage, saturation voltage and pow er consum ption are substantially

TPS54310

Abstract: TPS54610
Contextual Info: Application Report SLVA284 – September 2007 Power for the Virtex -5 Transceiver Using DC/DC Converters With Integrated FETs Jatan Naik . PMP - Portable Power

TPS40041

Contextual Info: Application Report SLVA283 – September 2007 Power for the Virtex -5 Transceiver Using DC/DC Controllers With External FETs Jatan Naik . PMP - Portable Power

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

TPS54610

Abstract: TPS54672
Contextual Info: Application Note SLVA112 – November 2001 Using the TPS54672 Tracking/Termination Synchronous PWM Switcher With Integrated FETs SWIFTTM for DDR and Bus Termination Applications John Tucker High Performance Analog, Power Management Products Introduction