FF R 1200 Search Results
FF R 1200 Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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XPN12006NC |
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N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) |
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TPN12008QM |
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MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance |
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FF R 1200 Price and Stock
Samtec Inc FFMD-05-T-12.00-01-N-RRibbon Cables / IDC Cables .050" Tiger Eye(TM) IDC Ribbon Cable Assemblies |
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FFMD-05-T-12.00-01-N-R | 122 |
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Samtec Inc FFMD-04-S-12.00-01-SRRibbon Cables / IDC Cables .050" Tiger Eye(TM) IDC Ribbon Cable Assemblies |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FFMD-04-S-12.00-01-SR | 49 |
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Samtec Inc FFMD-10-S-12.00-01-RWRibbon Cables / IDC Cables .050" Tiger Eye(TM) IDC Ribbon Cable Assemblies |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FFMD-10-S-12.00-01-RW | 28 |
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Samtec Inc FFSD-08-D-12.00-01-N-RRibbon Cables / IDC Cables .050" Low Profile Tiger Eye(TM) IDC Ribbon Cable Assembly |
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FFSD-08-D-12.00-01-N-R | 25 |
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Infineon Technologies AG FF1200XTR17T2P5BPSA1IGBT Modules 1700 V, 1200 A dual IGBT module |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FF1200XTR17T2P5BPSA1 | 24 |
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FF R 1200 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IGBT FF 300
Abstract: eupec FZ 50 A 12 KF FZ 75 eupec FZ 800 R 16 fz 69 eupec FS 25 R 12 KL eupec igbt 400 A FZ200 Eupec fz 1200 r 12 50/R005 FZ
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D0DG122 IGBT FF 300 eupec FZ 50 A 12 KF FZ 75 eupec FZ 800 R 16 fz 69 eupec FS 25 R 12 KL eupec igbt 400 A FZ200 Eupec fz 1200 r 12 50/R005 FZ | |
eupec FZ 50 A 12 KF
Abstract: IGBT FF 300 fz 69 FZ 300 R 06 KL kl 50 eupec FZ 800 R 16 Eupec fz 1200 r 12 FZ15A10KN FF 75 R 1200 kl igbt eupec FS 25 R 12 KL
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D0DG122 eupec FZ 50 A 12 KF IGBT FF 300 fz 69 FZ 300 R 06 KL kl 50 eupec FZ 800 R 16 Eupec fz 1200 r 12 FZ15A10KN FF 75 R 1200 kl igbt eupec FS 25 R 12 KL | |
FS150R12KF4
Abstract: IGBT module FZ 1200 FF 400 R 14 FS200R12KF4 400R12K DIODE e2l IGBT module FZ 1200 R17kf4 igbt F4 400 R 12 KF4 IGBT FZ 800R12kF4 FZ 51
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140x73mm 140x130 140x190 3M03HT 00G2S07 FS150R12KF4 IGBT module FZ 1200 FF 400 R 14 FS200R12KF4 400R12K DIODE e2l IGBT module FZ 1200 R17kf4 igbt F4 400 R 12 KF4 IGBT FZ 800R12kF4 FZ 51 | |
Contextual Info: A12FA 660V Nicht Rückstellende Sicherungen www.schurter.com/pg01_2 Gerätesicherung, 6.3 x 32 mm, Superflink FF, 660 VAC UL 248-14 • 660 VAC · Superflink FF Beschreibung Anwendungen - Hohes Ausschaltvermögen Standards - Halbleiterschutz - Messgeräte |
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A12FA com/pg01 E132506 | |
Contextual Info: A12FA 500V Nicht Rückstellende Sicherungen www.schurter.com/pg01_2 Gerätesicherung, 6.3 x 32 mm, Superflink FF, 500 VAC UL 248-14 • 500 VAC · Superflink FF Beschreibung Anwendungen Standards Referenzen Zulassungen Weblinks - Hohes Ausschaltvermögen |
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A12FA com/pg01 E132506 | |
Contextual Info: A12FA 380V Nicht Rückstellende Sicherungen www.schurter.com/pg01_2 Gerätesicherung, 6.3 x 32 mm, Superflink FF, 380 VAC UL 248-14 • 380 VAC · Superflink FF Beschreibung Anwendungen Standards Referenzen Zulassungen Weblinks - Hohes Ausschaltvermögen |
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A12FA com/pg01 E132506 Lag35 | |
Contextual Info: IBM13M16734BCC 16M x 72 1 Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: 1n \ L _ , -2 6 0 ,-3 6 0 ! \ j. PCJ0° .! Units! i R e g . ! B u ff. • R e g . ; B u ff. ; |
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IBM13M16734BCC 168-Pin 16Mx72 66/100MHz PC100 | |
Contextual Info: SA 5x20 Nicht Rückstellende Sicherungen www.schurter.com/pg01_2 Gerätesicherung, 5 x 20 mm, Superflink FF, 250 VAC 250 VAC • Superflink FF Beschreibung Referenzen - Hohes Ausschaltvermögen - Keramikrohr Allgemeine Produktinformationen Weblinks Zulassungen, RoHS, CHINA-RoHS, e-Store, Distributor-Stock-Check, |
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com/pg01 | |
Contextual Info: IB M 1 3 M 1 6 7 3 4 B C C Preliminary 16M X 72 1 Bank Registered/Buffered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: | -260,-360 | R e g . ! B u ff, j R e g . i B u ff. |
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168-Pin 16Mx72 66/100MHz PC100 16734BCC | |
superflinkContextual Info: FUSES / SICHERUNGEN NON RESETTABLE / NICHT RÜCKSTELLEND NEW Sub-miniature fuse for surface mounting Type MGA Kleinst-Sicherung für Oberflächenmontage Typ MGA super-quick-acting FF superflink FF NEU Typical Time to Trip at 23˚C/ Typische Auslösezeiten bei 23˚C |
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KF412Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values |
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IC1500Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values |
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Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values |
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Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 7 28 2,5 deep C2 16 40 53 E1 G2 18 44 2,5 deep 57 C2 C2 E1 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values |
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Contextual Info: FF 200 R 12 KL Transistor Transistor Thermische Eigenschaften Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 200 A RthCK lc Thermal properties DC, pro B austein/p e r module DC, pro Baustein /p e r module pro B austein/p e r module |
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LVJ DIODEContextual Info: FF 600 R 12 KF 1 Transistor Transistor Elektrische Eigenschaften Electrica] properties VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro Baustein /p e r module 0,016 DC, pro Z w e ig /p e r arm 0,032 RthCK pro B austein/p e r module |
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31403HR7 LVJ DIODE | |
Contextual Info: FF 300 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 300 A lc Thermische Eigenschaften Rthjc RthCK IC R M tp = 1 ms 600 A Pto t tc = 25°C 1800 W Thermal properties DC, pro Baustein/per module |
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300R12tCF2 | |
7SR10
Abstract: FF75R10KF2 75r10kf2
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FFT5B12KF2 4035T7 7SR10 FF75R10KF2 75r10kf2 | |
7SR10Contextual Info: FF 75 R 12 KF 2 Transistor Transistor Elektrische Eigenschaften Electrical properties Höchstzulässige W erte VcES Maximum rated values 1200 Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,11 DC, pro Z w e ig /p e r arm |
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FFT5B12KF2 34035T7 7SR10 | |
Contextual Info: ff HA-5147 H A R R IS SE MI CO ND UC TO R Ultra-Low Noise Precision High Slew Rate Wideband Operational Amplifier March 1993 Features Description • H ig hspeed . 35V/^s The HA-5147 monolithic operational am plifier features an |
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HA-5147 HA-5147 120MHz 00V/V 002nV/Div. HA-5147, HA-5147A | |
FF50R12KF2
Abstract: FF50R12
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FFSOR12COKF3 FF50R12 50R10KF2/B 34032T7 FF50R12KF2 | |
Contextual Info: FF 75 R 12 KL T h erm isch e Eigenschaften Transistor T ran sistor R thJC Elektrische Eig ensch aften Electrical properties Höchstzulässige W erte Maximum rated values V ces Ic R thC K 1200 V 75 A Therm al properties DC, pro Baustein / per module DC, pro Baustein / per module |
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FF50R12KF2Contextual Info: FF 50 R 12 KF 2 Transistor Transistor Thermische Eigenschaften R th J C Elektrische Eigenschaften Electrical properties Hochstzulässige W erte V ces Maximum rated values R th C K Thermal properties pro Baustein /p e r module D C , pro Zweig / per arm pro Baustein / per module |
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FFSOR12COKF3 FF50R12 50R10KF2/B 34032T7 FF50R12KF2 | |
Contextual Info: FF 50 R 12 KF Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1200 V 50 A Ic Therm ische Eigenschaften Therm al properties Rthjc DC, pro B austein/p e r module 0,155 C/W ’C/W DC, pro Zweig / per arm 0,31 C/W |
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3403ES7 |