FIB5 Search Results
FIB5 Price and Stock
Vishay Siliconix IRFIB5N65AMOSFET N-CH 650V 5.1A TO220-3 |
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IRFIB5N65A | Tube |
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Vishay Siliconix IRFIB5N50LPBFMOSFET N-CH 500V 4.7A TO220-3 |
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IRFIB5N50LPBF | Tube | 1,000 |
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Vishay Siliconix IRFIB5N65APBFMOSFET N-CH 650V 5.1A TO220-3 |
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IRFIB5N65APBF | Tube |
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IRFIB5N65APBF | 898 |
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Vishay Intertechnologies IRFIB5N65APBFN Channel Mosfet, 650V, 5.1A, To-220Fp; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:5.1A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Vishay IRFIB5N65APBF |
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IRFIB5N65APBF | Bulk | 1,000 |
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IRFIB5N65APBF | Tube | 350 | 50 |
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IRFIB5N65APBF | 1 |
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IRFIB5N65APBF | 3,000 | 143 Weeks | 50 |
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IRFIB5N65APBF | 768 |
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BES Manufacturing FIB522Wisp Head (Now - Glow-in-the-Dark, Durable Plastic) |
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FIB522 | 2 |
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FIB522 | 2 |
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FIB5 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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32P3016-CGT
Abstract: 32P3015-CM DD122 P3015
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32P3015/3016 32P3GT fiB53t Q012574 32P3016-CGT 32P3015-CM DD122 P3015 | |
cd 7522 csContextual Info: K A 7 5 3 1D Industrial ELECTRONICS BALLAST CONTROL 1C 22 SDIP The KA7531X is a ballast control IC improving power-factor.t The following is the features incorporated in it. It includes PFC control block so that the power-factor can be over 0.99 % and the high voltage at lamp driving block |
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KA7531X KA7521 KA7524 KA7531 7531D 00327bfi 22-S0P-300 24-SOP-300 cd 7522 cs | |
RBS 2202
Abstract: BBS 2202 intel 80188 Lucent SLC 96 CI 4048 counter ami c21 SESCO MOTOROLA LSC SR12 SR14
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T7230A RBS 2202 BBS 2202 intel 80188 Lucent SLC 96 CI 4048 counter ami c21 SESCO MOTOROLA LSC SR12 SR14 | |
MAG12M
Abstract: CSP1088 DSP1618 W2020 audi mmi TMS 2708 JL
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July1995 CSP1088 DSP1618 W2020 005002b 100-Pin MAG12M audi mmi TMS 2708 JL | |
xl 1507
Abstract: smd diode s30 lp 13201
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60tiz xl 1507 smd diode s30 lp 13201 | |
Contextual Info: A C O M PA N Y OF MODEL IHB Filter Inductors High Current FEATURES • Printed circuit mounting • Wide range of inductance and current ratings • Pre-tinned leads • Optional insulating covering and printing available at additional cost ELECTRICAL SPECIFICATIONS |
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Contextual Info: SU PE R T E X INC blE D • fl7732tlS a ü G 3 1 Ô M 'iS'î « S T X VN12A f f i S u p e r t e x in c . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices / Order Number / Package R DS ON BVdgs (max) If BV nss |
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fl7732t VN12A VN1204N2 VN1206N2 VN1210N2 O-220 VN1204N5 VN1206N5 VN1210N5 VN1204ND | |
Contextual Info: Preliminary Data Sheet April 1997 m icro e le ctro n ic s group Lucent Technologies Bell Labs Innovations T7903 ISA Multiport Wide Area Connection ISA-MWAC Device Features • Three wide area connection ports. Each port can be configured as a basic rate ISDN TE or NT or as |
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T7903 16-channel 15-bit SN74LS32) SN74LS04) T7903. CY7C199. SN74LS174 005002b | |
Nippon capacitorsContextual Info: H B 5 6 T W 4 3 2 D /H B 5 6 T W 4 3 3 D S e r ie s 16 MB Unbuffered FP DRAM S.O.DIMM 4-Mword x 32-bit, 4 k/2 k Refresh, 1-Bank Module 8 pcs of 4 M x 4 Components HITACHI ADE-203-732B (Z) Rev.2.0 Nov. 1997 Description The HB56TW432D is a 4M x 32 dynamic RAM Small Outline Dual In-line Memory Module |
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32-bit, ADE-203-732B HB56TW432D 16-Mbit HM51W16400) HB56TW433D HM51W17400) HB56TW432D, Nippon capacitors | |
MT4C1670Contextual Info: MICRON TECHNOLOGY INC 5SE T> • falllSHI DD0HS21 SbT ■ URN MT4C1670/1 L 64K X 16 DRAM MICRON rn TECHNOLOGY INC. DRAM 6 4 K x 1 6 DRAM NEW T -w -zb -n STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH • Industry standard xl6 pinouts, timing, functions and packages |
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DD0HS21 MT4C1670/1 MT4C1670 MT4C1671 225mW----------- DDD4S36 | |
05H12Contextual Info: General Release Specification — MC68HC 7 05H12 List of Sections List of Sections. 1 Table of List of Figures. 13 |
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MC68HC 05H12 52-Pin 01b4272 05H12 | |
Contextual Info: 'Corp. M I6626U S th ru 1N6631US ! Senta Ana 2830 S. Fairview Street, Santa Ana, CA 92704 714 979-8220 • (714) 557-5989 fa x Features • • • • • • • AXIAL AND SURFACE M OUNT CONFIGURATIONS HIGH VOLTAGE WITH ULTRA FAST RECOVERY TIME VERY LOW SWITCHING LOSS AT HIGH TEMPERATURE |
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I6626U 1N6631US MIL-S-19500/590 1IU6626 1N6626 1N6627 1N6628 1N6629 1N6630 1N6631 | |
Contextual Info: P ^ IL O H D IN IÄ I^ Y r i . MX26C51 2 5 'I S K - B I T I B 4 K x B ] C M O S M U L T IP L J E -T IM E -P R O G R A IV IIV /IA B L E R O M FEATURES • 64K x 8 organization O perating current: 3 0 m A S tandby current: 1 0 0 |iA 100 m inim um e rase/prog ram cycles |
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MX26C51 28-PIN | |
Contextual Info: Philips Semiconductors Product specification 16-bit latched transceivers with dual enable 3-State 74ABT16543 74ABTH16543 FEATURES DESCRIPTION • Two 8-bit octal transceivers with D-type latch The 74ABT16543 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high |
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16-bit 74ABTH16543 64mA/-32mA 500mA 74ABT161543 74ABT/H16 500ns | |
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Contextual Info: A S 4 C 2 5 6K 1 6F 0 Il 5V 2 5 6 K x 1 6 C M O S DRAM fast page m ode Features • Organization: 262,144 w ords by 16 bits • High speed - 2 5 /3 0 /3 5 /5 0 ns RAS access time - 12/1 6 /1 8 /2 5 ns column address access time - 7 /1 0 /1 0 /1 0 ns CAS access time |
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AS4C256K16F0-50) 40-pin 40-pin AS4C256K16F0-25JC AS4C256K16F0-30JC AS4C256K16F0-35JC AS4C256K16F0-50JC 40/44-pin AS4C256K16F0-50TC 256K16F0 | |
Contextual Info: SSI 33P3733A M k m s u s k m 8-26.5 Mbit/s Read Channel w/Pit Mark Pulse Qualifier s ' A TDK Group/Company March 1995 DESCRIPTION The SSI 33P3733A device is a high performance BiCMOS single chip read channel 1C that contains all the functions needed to implement a complete zoned |
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33P3733A 33P3733A 64-Lead 33P3733A-CGT 0E53TbS DD123b2 | |
ICX022
Abstract: 63A23
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CXA1065M XA1065M ICX022 63A23 | |
QML-38535
Abstract: 5962-9763101QXA military marking symbols
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5962-E254-98 T0Q470Ã D031SS2 5962-9763101QXA CY7C4271 -15LMB TDD47DÃ QML-38535 military marking symbols | |
mc1 electret microphone
Abstract: 3B159 CSP1088 electret condenser microphone element DSP1618 W2020 GMSK AIS audi mmi Q017b AIS TRANSMITTER GMSK
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July1995 CSP1088 DSP1618 W2020 005002b CSP1088 100-Pin mc1 electret microphone 3B159 electret condenser microphone element GMSK AIS audi mmi Q017b AIS TRANSMITTER GMSK | |
frl 264 relay
Abstract: frl 263 relay
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MTC-3052 125kbits/second frl 264 relay frl 263 relay | |
Contextual Info: Am79M576A Advanced Micro Devices Metering Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • ■ Programmable constant resistance feed ■ Programmable loop detect threshold ■ Two-wire impedance set by single external impedance ■ Ground-key detect |
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Am79M576A 05S7S57 0035L00 00B5L01 | |
Nippon capacitors
Abstract: 0/B526C464EN
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HB526C264EN-10IN, HB526C464EN-10IN 64-bit, ADE-203-737D B526C264EN B526C 464EN B526C264EN 16-Mbit 5216805TT) Nippon capacitors 0/B526C464EN | |
tone decoder ne567
Abstract: NE567 application note equivalent NE567 NE567 567 tone NE567N NE567D FLS2- transistor ci 567 C0807
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NE/SE567 NE567/SE567 711DflSb 100mA 7110fl2fc. tone decoder ne567 NE567 application note equivalent NE567 NE567 567 tone NE567N NE567D FLS2- transistor ci 567 C0807 | |
RXTNB 2Contextual Info: PXB 4220 SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w .7 Features. 9 |
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6235b05 RXTNB 2 |