FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYP Search Results

TEST88

Contextual Info: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools

TPC8A01

Contextual Info: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 Unit: mm DC-DC CONVERTER Notebook PC Portable Machines and Tools

TPC8A01

Abstract: MARKING 3AB
Contextual Info: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •

TPC8A01

Contextual Info: TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U－MOSⅢ Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools •

3N128

Contextual Info: Order this document by 3N128/D MOTOROLA M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTOR N-CHANNEL MOS FIELD-EFFECT TRANSISTOR . . . designed for VHF amplifier and oscillator applications in com­ munications equipment.

TPC8A01

Abstract: MARKING J1A 4X25 pdii
Contextual Info: T O S H IB A TPC8A01 01:TOSH IBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U—MOS DI 0 2:INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE( U - M O S M ) TENTATIVE TPC8A01 DC-DC CONVERTER NOTE BOOK PC PORTABLE MACHINES AND TOOLS

3SK231

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)

NEC k 1760

Abstract: UAA 146 3SK230 UAA 2001
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBµ (TYP.) @f = 470 MHz, GR = −30 dB

3SK134B

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • High Power Gain Gps = 23.0 dB TYP. @ = 900 MHz • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)

3SK230

Abstract: U1A marking
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBm (TYP.) @f = 470 MHz, GR = -30 dB

3SK231

Contextual Info: DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain Gps = 17.5 dB TYP. (@ = 900 MHz)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz • High Power Gain G ps = 17.5 dB TYP. (@ = 900 MHz)

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES Low Noise Figure NF = 2.0 dB TYP. @ = 900 MHz High Power Gain Gps PACKAGE DIMENSIONS (Unit: mm) = 17.5 dB TYP. (@ = 900 MHz)

TPCP8401

Contextual Info: TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSⅣ / N Channel U-MOSⅢ TPCP8401 2.9±0.1 0.3 +0.1／−0.05 0.025 M 8 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating P Channel N Channel 0.24＋0.10 −0.09

2u55

Abstract: 3SK134B
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES V Gate1 to Source Voltage VG1S ±8 Gate2 to Source Voltage VG2S ±8 ±10 *1 V Gate1 to Drain Voltage

3SK135A

Abstract: of 8404
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK135A RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES in millimeters • Suitable for use as RF amplifier in UHF TV tuner. 4 1 –0.06 0.16 +0.1

3SK131

Abstract: 3SK131-T2-A V12 P12449EJ2V0DS00 TC1508
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage

3SK245

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK245 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain G ps = 23.0 dB TYP. @ = 900 MHz • Low Noise Figure NF = 2.4 dB TYP. (@ = 900 MHz)

P10-58

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. Unit: mm CM = 108 dB // (TYP.) @ f = 470 MHz, G r = -3 0 dB

TRANSISTOR D 2398

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK134B RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS = 23.0 dB TYP. @ = 900 MHz • High Power Gain G Ps • Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK245 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • High Power Gain G • Low Noise Figure NF = 2.4 dB TYP. @ = 900 MHz ps = 23.0 dB TYP. (@ = 900 MHz)

tpc8405

Contextual Info: TPC8405 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type P Channel U−MOS IV/N Channel U-MOS III TPC8405 Lithium Ion Secondary Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Low drain-source ON resistance

3SK131

Abstract: P12449EJ2V0DS00
Contextual Info: DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS FEATURES • Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0 .0 5 pF T Y P .