FIG12 Search Results

Contextual Info: REV. 1.1 FS6611-DS-11_EN Datasheet FS6611 Energy Metering IC with Impulse Output SEP 2006 FS6611 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

CI 3060 elsys

Abstract: rs 3060 cj KS0090 KS* I2C driver LCD driver KS KS0090I SEG60
Contextual Info: Pre! iminary K S0090 26C O M /64SEG DRIVER & CONTROLLER FO R STN LCD Rev. 7.0 1. INTRODUCTION DOT MATRIX LCD CONTROLLER & DRIVER K S 0090/90-I K S 0090 / K S0090I is a d o t matrix LC D driver & controller LSI w hich is fabricated by low p o w e r C M O S technology. It can display 2 or 3 lines with 5 x 8 dots form a t.

Contextual Info: Preliminary LC5830K DATA SHEET LC5830K DATA SHEET Rev.0.3 Rev.0.3 The contents in this data sheet are preliminary, and are subject to changes without notice. SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp Copy Right: SANKEN ELECTRIC CO., LTD. Page.1

SON2017-6

Abstract: TK64629AM5 MARK E31 SOT23-5
Contextual Info: APPLICATION MANUAL High RR, Fast Response, Low Noise 200mA CMOS LDO Regulator IC With Sleep Mode TK646xxAM5/S2 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS

TK10203AM9

Contextual Info: アプリケーションマニュアル 1.5ch定電流HブリッジドライバICのご紹介 TK10203AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5. PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

CM105B104K25A

Abstract: CT21X5R105K25A TK10202AM9 AP-478
Contextual Info: アプリケーションマニュアル 1ch定電流HブリッジドライバICのご紹介 TK10202AM9 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS

marking n35

Abstract: Toko 10mm SON2017-6 GC3-M021A TK68115AMF MARKING CODE B25 SOT23-5
Contextual Info: APPLICATION MANUAL Capacitor-less, Ultra Small Package, Low IQ 200mA CMOS LDO Regulator IC TK681xxAMF/M5/S2 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS

MUN2216

Abstract: MUN2211 MUN2212 MUN2213 MUN2214 MUN2215 MUN2230 MUN2231 MUN2232 0425-c
Contextual Info: MUN2211 Series NPN Silicon Bias Resistor Transistor 3 R1 R2 1 2 SC-59 WEITRON http://www.weitron.com.tw Rev.A 23-Jan-09 MUN2211 Series ELECTRICALCHARACTERISTICS T A = 25 C unles s otherwis e noted Characteristic Symbol Min Typ Max Unit C ollector-B as e C utoff C urrent (V C B = 50 V, I E = 0)

TK63133

Abstract: TK63115B marking code C33 CM05B TK63118B TK63128B TK63130B TK631xxB TOKO 10K SON2017-6
Contextual Info: APPLICATION MANUAL CMOS LDO Regulator IC TK631xxB/H/S CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TEST CIRCUIT 10 . TYPICAL CHARACTERISTICS

KHB7D5N60F1

Abstract: KHB7D5N60F KHB7D5N60P1 KHB7D5N60F2 tjc3 D 92 M - 02 DIODE VDD-300V
Contextual Info: SEMICONDUCTOR KHB7D5N60P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N60P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KHB5D0N50F

Abstract: KHB5D0N50P KHB5D0N50F2
Contextual Info: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and

KHB019N20F1

Abstract: KHB019N20F2 KHB019N20P1
Contextual Info: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters

Contextual Info: PD - 97043B IRF6648 DirectFET™ Power MOSFET ‚ RoHs Compliant Containing No Lead and Bromide  l Low Profile <0.7 mm l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Optimized for Synchronous Rectification for 5V

FS-1133

Contextual Info: PCS3P73Z01BW Wide Frequency range TimingSafe Peak EMI reduction IC General Features 1x , LVCMOS Timing-Safe™ Peak EMI Reduction Input frequency: 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V Output frequency Timing-Safe™ : 12MHz - 150MHz @ 2.5V 15MHz - 175MHz @ 3.3V

td1513

Contextual Info: Techcode DATASHEET 2A 380KHz 20V PWM Buck DC/DC Converter General Description TD1513 Features The TD1513 is a 380 KHz fixed frequency monolithic z 2A Constant Output Current step down switch mode regulator with a built in internal z 140mΩ RDSON Internal Power PMOSFET Switch

D 92 M - 02 DIODE

Abstract: D 92 M - 03 DIODE KF60N06P c 92 M - 02 DIODE
Contextual Info: SEMICONDUCTOR KF60N06P TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

KMB2D0N60SA

Contextual Info: SEMICONDUCTOR KMB2D0N60SA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment.

kf12n60

Abstract: kf12n60f kf12n60 equivalent KF12N60P *2n60P
Contextual Info: SEMICONDUCTOR KF12N60P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF12N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

047N08P

Abstract: 047N08
Contextual Info: SEMICONDUCTOR KU047N08P TECHNICAL DATA N-ch Trench MOS FET General Description A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,

BYW100-100

Abstract: CFL lamp 100NF 630V L6569 L6569A L6569AD L6569D irf 146 diode 1N4006 specifications PTC 15 T 630V
Contextual Info: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY INTERNAL BOOTSTRAP DIODE STRUCTURE 15.6V ZENER CLAMP ON VS DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA

KHB8D8N25F

Abstract: 352AL D 92 M - 02 DIODE KHB8D8N25F2 KHB8D8N25P
Contextual Info: SEMICONDUCTOR KHB8D8N25P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB8D8N25P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters

KHB7D0N65F1

Abstract: RL46 KHB7D0N65F KHB7D0N65F2 KHB7D0N65P1
Contextual Info: SEMICONDUCTOR KHB7D0N65P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB7D0N65P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

khb*2D0N60P

Abstract: KHB2D0N60F KHB2D0N60P khb*2d0n60f KHB2D0N60F2 KHB2D0N60F equivalent
Contextual Info: SEMICONDUCTOR KHB2D0N60P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB2D0N60P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode

on line ups circuit diagrams

Abstract: M30260F8AGP c21214
Contextual Info: THE NEW VALUE FRONTIER No. C0502-05002-001 Jan.11.2005 KYOCERA KINSEKI CORPORATION CRYSTAL UNITS DEPARTMENT Consideration for crystal oscillation circuits You will find typical data with regard to” the result of matching study of oscillation circuits and crystal units