FIGURE15 Search Results

TRANSISTOR mcr 100-8

Contextual Info: MOTOROLA MC33389 SEMICONDUCTOR TECHNICAL DATA SBC System basis chip Advance Information Automotive System Basis Chip The MC33389 is a monolithic integrated circuit combining many functions frequently used by automotive ECUs. It incorporates a low speed fault

Contextual Info: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX3 Series ●General The PWM type DC/DC converter BM2PXX3 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX3 supports both isolated and non-isolated

MIMMG150DR120UZA

Contextual Info: MIMMG150DR120UZA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG150DR120UA

Contextual Info: MIMMG150DR120UA 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG75SR060UK

Contextual Info: MIMMG75SR060UK 600V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module

MIMMG200DR120UZA

Contextual Info: MIMMG200DR120UZA 1200V 200A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG40H120XB6TN

Abstract: 1 phase igbt 1200V 40A module inverter circuit diagram
Contextual Info: MIMMG40H120XB6TN 1200V 40A PIM Module RoHS Compliant FEATURES □ High level of integration—only one power semiconductor module required for the whole drive □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current

MIMMG150DR120UK

Abstract: AC welder circuit diagram
Contextual Info: MIMMG150DR120UK 1200V 150A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor GD Series Module

MIMMG75SR120B

Contextual Info: MIMMG75SR120B 1200V 75A IGBT Module RoHS Compliant FEATURES • Ultra Low Loss · High Ruggedness · High Short Circuit Capability · Positive Temperature Coefficient · With Fast Free-Wheeling Diodes APPLICATIONS · Invertor · Convertor · Welder GS Series Module

pin configuration of 7486 IC

Abstract: pin DIAGRAM OF IC 7486 Schottky B 1045 TRW PT 3154 D pin DIAGRAM OF IC 7486 datasheet pin configuration OF IC 7486 pin configuration of ic 7448 6232 RAM DIAGRAM OF IC 7106 IC 7486
Contextual Info: S6B33A2 128 RGB Segment & 129 Common Driver For 4,096 Color STN LCD Sep. 06. 2002. Ver. 1.3 Contents in this document are subject to change without notice. No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose,

SL1925E

Abstract: DS4955 SL1925 1T379 BB831 Capacitance Varactor Diode KV 4 way rf splitter ic fc-146 4-WAY L-band active splitter
Contextual Info: SL1925 Satellite Zero IF QPSK Tuner IC Preliminary Information DS4955 Issue 3.0 Features ● ● ● ● ● ● ● ● ● Single chip system for direct quadrature down conversion from L-band High signal handling capability for minimum external component count application, requires

ba1s

Contextual Info: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data

SAMSUNG K9F1208U0B

Abstract: K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D
Contextual Info: K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Aug. 24th 2003 Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

K4R271669E

Contextual Info: Preliminary Direct RDRAM K4R271669E 128Mbit RDRAM E-die 256K x 16 bit x 32s Banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary Direct RDRAM™ K4R271669E Change History Version 1.4 ( July 2002 ) - Preliminary - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

Contextual Info: XRP9710 and XRP9711 Dual 6A Programmable Power Module Rev. 1.0.1 January 2014 GENERAL DESCRIPTION FEATURES The XRP9710 and XRP9711 are programmable step down power modules providing two 6A outputs. The module package contains the switching controller, power

1T379

Abstract: BB811 DS4955 SL1925
Contextual Info: SL1925 Satellite Zero IF QPSK Tuner IC Preliminary Information DS4955 Features ● ● ● ● ● ● ● ● ● Single chip system for direct quadrature down conversion from L-band High signal handling capability for minimum external component count application, requires

HFBR-2522

Contextual Info: Versatile Link Family Application Note 1035 Introduction Optical fiber technology has changed data communication transfer especially in the industrial environment, where data must be transferred between machines rapidly while still ensuring high reliability. Optical fiber is typically fabricated

IS43LR16640A

Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
Contextual Info: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted

Contextual Info: TO SHIBA TMP47P400V CMOS 4-BIT MICROCONTROLLER TMP47P400VN TMP47P400VF The 47P400V is the system evaluation LSI of 47C200B/400B with 32K bits one-time PROM. The 47P400V programs/verifies using an adapter socket to connect with PROM programmer, as it is in TMM2764AD.

TXM RX 28 Receiver

Contextual Info: TLV320AD16 3.3-V INTEGRATED ADSL CODEC SLWS107 – JUNE 2000 D D D D D D Complete Discrete Multitone-Based Asymmetric Digital Subscriber Line Coder/Decoder Supports Full Rate ADSL and G.Lite Application in Both Echo Cancellation or FDM Modes Integrated 14-Bit Converter for

15w audio amplifier circuit diagram

Abstract: mosfet driver marking he sot23-6 MD4101 MO-178 2x500pF 1F MARKING SOT23-6 VA-2230A
Contextual Info: MD4101 1.5W Filterless Class-D Mono Audio Amplifier General Description Features The MD4101 is a single supply,high efficiency P O at 10% THD+N, VDD = 5V 1.5W class-D audio amplifier. A low noise, RL = 8 Ω filterless PWM architecture eliminates the output

MP-25

Abstract: NP88N055CLE NP88N055DLE NP88N055ELE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CLE, NP88N055DLE, NP88N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.

pks607

Abstract: ee25 transformer PKS603-607 pks606 PKS603 PX 1N4007
Contextual Info: PKS603-607 PeakSwitch Family Enhanced, Energy-Efficient, Off-Line Switcher IC With Super Peak Power Performance Product Highlights EcoSmart – Extremely Energy-Efficient • Standby output power ≥0.6 W for 1 W input high line • Sleep mode power ≥2.4 W at 3 W input (high line)

da53

Abstract: uPD488385FB-C60-53-BF1 uPD488385FB-C80-40-BF1 uPD488385FB-C80-45-BF1 uPD488385FB-C80-50-BF1
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD488385 72 M-bit 256K x 18 x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where