Untitled
Abstract: No abstract text available
Text: SEC fiPD431009 131,072 X 9-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The ¿/PD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high
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fiPD431009
/PD431009
072-word
/L/PD431009
36-pin
36-pin,
400-mil
jLfPD431009
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IC-3237
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The /¿PD431009 is a high speed, lo w p o w e r, 1 179 072 b its 131 072 w o rd s by 9 b its CMOS sta tic RAM. The ¿iPD431009 is packed in 36-pin p la stic SOJ.
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uPD431009
128K-WORD
PD431009
iPD431009
36-pin
Stan-400A
040-ooos
/JPD431009.
/iPD431009LE:
IC-3237
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Untitled
Abstract: No abstract text available
Text: SEC ¡j PD431009 131,072 x 9-Bit Static CMOS RAM NEC Electronics Inc. October 1992 Description Pin Configuration The /JPD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high
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OCR Scan
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PDF
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PD431009
/JPD431009
072-word
/L/PD431009
iPD431009
36-pin
36-pin,
400-mil
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