FJT1101 Search Results

FJT1101 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FJT1101		Fairchild Semiconductor	Ultra Low Leakage Diodes	Scan	PDF	30.38KB	1
FJT1101		Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	41.36KB	1
FJT1101		National Semiconductor	Silicon Single Junction Diodes	Scan	PDF	110.3KB	1
FJT1101		National Semiconductor	Silicon Single Junction Diodes	Scan	PDF	110.81KB	1
FJT1101		National Semiconductor	Low Leakage Diodes	Scan	PDF	33.05KB	1

FJT1101 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FJT1100 Abstract: FJT1101 BV20 Contextual Info: FAIRCHILD SEMICONDUCTOR ~fl4 D eT\| 3 4 ^ 7 4 F JT1100/FJT1101 r-« '-*f FAIRCHILD •b b ^ b b b i Ultra Low Lfeakage Diodes A Schium berger C o m p an y PACKAGES • Ir . . 1.0 pA MAX @ 5 V (FJT1100) • B V . . . 20 V (MIN) (F JT 1 100) F JT 1 1 0 0 F JT 1 1 0 1	OCR Scan	34tTb7 JT1100/F JT1101 FJT1100) FJT1101 FJT1100 FJT1101 BV20	PDF
fjt1100 Contextual Info: FJT1100 I nternational and S em ico nducto r , I nc . FJT1101 ULTRA LOW LEAKAGE DIODES DIFFUSED SILICON PLANAR :o ABSOLUTE MAXIMUM RATINGS . f SYM BOL vR C H A R A C T E R IS T IC P e a k In ve rse V o lta g e - V „„ lo FJT 11 0 0 FJT1101 R e c tifie d	OCR Scan	FJT1100 FJT1101 FJT1101 DO-35 FJT1100 T00037Ô	PDF
Contextual Info: DIGITRON SEMICONDUCTORS FJT1100, FJT1101 ULTRA LOW LEAKAGE DIODES IR = 1.0 pA max @ 5V (FJT1100) BV = 20 V (min) (FJT1101) MAXIMUM RATINGS Characteristics Value Storage temperature range -55° to +200°C Maximum junction operating temperature +175°C Lead temperature	Original	FJT1100, FJT1101 FJT1100) FJT1101) FJT1100	PDF
fjt1101 Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A Contextual Info: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125	OCR Scan	1N456 DO-35 1N456A 1N457 1N457A 1N458 fjt1101 FJT1102 1N459A FJT1100 1N458A	PDF
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent	PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680	PDF
Contextual Info: Ill _ FEATURES • WIDE SUPPLY RANGE - ±15V to ±225V • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH OUTPUT CURRENT - Up to ±200mA Continuous • LOW BIAS CURRENT - FET Input • PROTECTE D OUTPUT STAGE - Thermal Shutdown • HIGH SLEW RATE- 1000V///S	OCR Scan	200mA 000V///S 200mA. 150KO FJT1101 DE104 150KQ 100pf/200V PA85U	PDF
FJT1100 Abstract: DO-41 package 1N4148 FJT1101 1N463 DO-41 DO-35 DO-7 Contextual Info: Discrete POWER & Signal Technologies Switching Diodes Computer Diodes Device No. Package No. Glass Package VRRM IR (V) (nA) Min Max @ VF VR (V) (V) Min @ Max IF (mA) C trr (pF) (ns) Max Max Test Cond. Process No. 1N914 DO-35 100 25 5000 20 75 1 10 4 4 (Note 2)	Original	1N914 DO-35 1N914A 1N914B 1N916 1N916A FJT1100 DO-41 package 1N4148 FJT1101 1N463 DO-41 DO-35 DO-7	PDF
1S920 Abstract: 1n4150 sot-23 BAY71 MMB0914 1N916 1N916B 1S921 D0-35 FDLL4148 FDLL4448 Contextual Info: h ô L D. • Silicon Single Junction Diodes continued bSOHBG NATL SEMICOND Vrrm (Volts) Min 100 80 75 Device VFM @ IF l«r I rrm (nA) (ns) (Volts) (mA) Max Max Max Package* 1N916 25 1.0 10 4.0 DO-35 1N916B 25 1.0 30 4.0 DO-35 (Volts) Min 75 70 DO-35 200	OCR Scan	bS0113G 1N916 D0-35 1N916B DO-35 1S921 FDLL4148 LL-34* FDLL4448 1S920 1n4150 sot-23 BAY71 MMB0914 D0-35	PDF
1n52408 Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which	OCR Scan	301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC	PDF
FJT1 Abstract: FJT1100 1N456A FJT1102 Contextual Info: Device No. Package No. Glass Package VRRM c VF (V) (nA) Min Max @ VR (V) (V) Min @ Max •f (mA) <pF) Max Process No. 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125 1 7 1N458A	OCR Scan	1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A FDH300 DO-35 FJT1 FJT1100 FJT1102	PDF
BD1501 Contextual Info: •r r m D e v ic e M in 2S0 m 1S0 n A M ax Vfm @ k ( V o lte ) M ax (m A ) Wr Vrrm (n s ) (Vatts) P ackage* ill V RHM ( V o lts ) Diodes Silicon Single Junction Diodes D e v ic e M in M ax 150 VW @ !f (V o lte ) Max Vr (IK ) (m A ) P ackage* M ax 1 IN 4 8 6 B	OCR Scan	1S922 BAS20 BAX16 H300A O-236AB r0-236 LL-34 O-236 DO-35 BD1501	PDF
BAS 20 SOT23 Abstract: BAW62 SOT23 1s920 3BT SOT-23 1n4376 MMBD1201 BAY71 1N916 1S921 FDLL4148 Contextual Info: Vrrm Volts Min 100 80 75 VFM @IF rr (ns) Package* (nA) (Volts) (mA) Max Max Max Ir r m Device 10 4.0 1.0 30 4.0 1.2 200 bsoiiao Düaqsoa 3t.T V RRM (Volts) Min 75 DO-35 Device ilf b fiL D . Silicon Single Junction Diodes (continued) mnscs Vm @lF 1* (ns) Package*	OCR Scan	1N916 DO-35 1N916B 1S921 FDLL4148 LL-34* FDLL4448 BAS 20 SOT23 BAW62 SOT23 1s920 3BT SOT-23 1n4376 MMBD1201 BAY71	PDF
1N4548 Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428 Contextual Info: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A	Original	1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428	PDF

Contextual Info: m m sm m ¡WigÊÊmêSiM FEATURES • • • • • WIDE SUPPLY RANGE - ±15V to ±150V PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH OUTPUT CURRENT - Up to ±150mA LOW BIAS CURRENT - FET Input PROTECTED OUTPUT STAGE - Thermal Shutoff APPLICATIONS • • • •	OCR Scan	150mA	PDF
1N4848 Abstract: 1N4868 1N4828 1N484 1N4858 1N456 1N456A 1N457A 1N458 1N458A Contextual Info: Diode Data NATL SEMICOND DISCRETE H E D [ f c , 5 ai l 3D GQ37QQ1 7 Low Leakage Diodes Glass Package If mA C PF Max Proc No. 1.0 40 10 D2 1.0 100 VF V VRRM V Min •r nA Max DO-35 30 25 25 1N4S6A DO-35 30 25 25 1N457 DO-35 70 25 60 1.0 20 1N457A DO-35 70	OCR Scan	fa501J T-01-01 1N456 DO-35 1N456A 1N457A 1N458 1N4848 1N4868 1N4828 1N484 1N4858 1N458A	PDF