FL23B320 Search Results
FL23B320 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BSP 129 SIPMOS N Channel MOSFET 32E D • fl23b320 GG171Q3 5 « S I R Preliminary Data • • • • • SIEMENS/ SPCL-, SEMICONDS SIPMOS - depletion mode Drain-source voltage Continuous drain current Drain-source on-resistance Total power dissipation Vis = 240V |
OCR Scan |
fl23b320 GG171Q3 Q62702-S510 00A/JUS 00A//JS | |
2907AContextual Info: 3SE m D fl23b320 00171ÔÔ h * SIP PNP Silicon Switching Transistors PZT 2907;PZT 2907A SIEMENS/ S P C L i SEMICONDS _ -1— 3*7- 1*7 Type Marking Ordering code 12-mm tape Package* PZT 2907 ZT 2907 Q62702- Z2028 SOT-223 PZT 2907A ZT 2907A Q62702• Z2025 |
OCR Scan |
fl23b320 12-mm Q62702- Z2028 OT-223 Q62702â Z2025 150Hz 200ns 2907A | |
Contextual Info: r-Q i-Q * Silicon Low Leakage Diode 35E D • fl23b320 0DlbS22 T « S I P ' BAS116 _ SIEMENS/ SPCL-. SEMICONDS • Low Leakage applications • Medium speed switching times • Single diode C Type M arking O rdering co de 8-m m tape P a cka ge BAS116 |
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fl23b320 0DlbS22 BAS116 Q62702-A919 23b320 T-01-09 | |
Contextual Info: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S |
OCR Scan |
fl23b320 Q62702-F964 Q62702-F1021 23b320 | |
Contextual Info: 32E D • fl23b320 0017Eflfi T « S I P PNP Silicon Transistor SMBT A 70 SIEMENS/ SPCL-, SEMICONDS ' *7_ • For AF input stages and driver applications • High current gain • Low coilector-emitter saturation voltage B Type Marking Ordering code for |
OCR Scan |
fl23b320 0017Eflfi | |
Contextual Info: 35E D • fl23b320 0QlbSfi3 ? H S I P Silicon Dual Tuning Diode BB 814 _ SIEMENS/ SPCLi SEMICONDS T-Ol-tf Prelim inary data • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common |
OCR Scan |
fl23b320 T-07-19 | |
Contextual Info: 32E D m fl23b320 0017060 2 H S I P SIPMOS N Channel MOSFET f * ' 5*1 ^ BSP 89 SIEMENS/ SPCL-, SEMICONDS Preliminary Data • SIPMOS - enhancement mode • Draln-source voltage • Continuous drain current • Draln-source on-resistance • Total power dissipation |
OCR Scan |
fl23b320 Q67002-S652 23b320 T-39-05 | |
Contextual Info: 32E D • fl23b320 GG1721S 5 H SIP PNP Silicon High-Voltage Transistors PZTA 92; PZTA 93 SIEMENS/ SP CLi SEMICONDS _ T - 3 3 -* 7 Type Marking Ordering code 12-mm tape Package* PZTA 92 PZTA 92 Q62702-Z2037 SOT-223 PZTA 93 PZTA 93 Q62702-Z2038 |
OCR Scan |
fl23b320 GG1721S 12-mm Q62702-Z2037 OT-223 Q62702-Z2038 300ps; 023b32D QD17S1Ã | |
marking s73Contextual Info: BSE D • Û23b320 G01bS72 S « S I P T - o V - I o! Silicon Tuning Diode B B 515 SIEMENS/ SPCL-, SEMICONDS Cathode • For UHF and VHF TV/VTR tuners Type BB515 Ordering code Q62702-B398 Marking white/S Maximum ratings Reverse voltage Forward current 30 20 |
OCR Scan |
23b320 G01bS72 BB515 Q62702-B398 fl23b320 T-07-19 marking s73 | |
RTM 866 - 485Contextual Info: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions! |
OCR Scan |
023ti32Q BFP93A 62702-F OT-143 RTM 866 - 485 | |
Contextual Info: f w > ' $ - O c! Silicon Switching Diode Array _ 32E D • B A S 28 Ô23b320 GQlbSDb G « S I P SIEMENS/ SPCLi SEMICONDS • For high-speed switching • Electrically Isolated diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape |
OCR Scan |
23b320 Q62702-A163 Q62702-A77 T-03-09 23b320 | |
Contextual Info: 35E D • 823b32Q QGlb'ìbS T « S I P NPN Silicon RF Transistor BFQ 81 SIEMENS/ SPCLi SEMICONDS _ • For low-noise amplifiers up to 2 GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 to 20 mA. |
OCR Scan |
823b32Q 62702-F1049 OT-23 | |
Contextual Info: 35E D • fl23b32Q GG1722S ö M S I P PNP Silicon Switching Transistors SIEM ENS/ S P C L i • • • SMBT2907 SEMIC0N] S ' High DC current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: SMBT 2222, SMBT 2222 A NPN) C Type |
OCR Scan |
fl23b32Q GG1722S SMBT2907 Q68000-A4336 Q68000-A4337 Q68000-A6501 Q68000-A6474 1/CE-20V 23b32Q A23b32G | |
lge 673
Abstract: TRANSISTOR cq 802
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053b3E0 017Q3C 62702-F1218 OT-23 01-1-1-7O lge 673 TRANSISTOR cq 802 | |
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BF993 siemensContextual Info: T Silicon N Channel MOSFET Tetrode 3 SE D • fl2 3 fc» 3 2 0 - Q Q l b 7 tì S 2 / - ¿ S ' BF 993 Q H S IP SIEMENS/ SPCLi SEMICONDS • • High gain, low distortion For VHF TV and FM mixer and Input stages Type Marking Ordering code for versions In bulk |
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62702-F899 62702-F1018 200MHZ 100MHz BF993 siemens | |
Contextual Info: BSE D • Ö23b32ü OOlbbOS 2 H S I P Silicon Switching Diode Array _ S IE M E N S / S P C Li SMBD 6100 S E M IC O N D S _ 1 2 ^ 2 ^ 2 3 • For high-speed sw itching applications • Comm on cathode Type M a rk in g O rd e rin g c o d e fo r |
OCR Scan |
23b32Ã 23L32Q SMBD6100 T-03-09 fl23b320 | |
BFR92PContextual Info: 3 S E D • ö5 3b3 EG 0G17GQ2 T W ËSI P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS BFR92P _ 7_ • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 0.5 to 20 mA. C £ CECC-type available: CECC 50002/254. |
OCR Scan |
0G17GQ2 BFR92P OT-23 BFR92P | |
Contextual Info: • SIP 32E D ■ 023b32G QQlbö?^ PNP Silicon High-Voltage Transistors B F N 37; B F N 39 _ SIEMENS/ SPCLi SEMICONDS T - 33-/7 Suitable lor video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage |
OCR Scan |
023b32G 12-mm Q62702- F1304 OT-223 F1305 8FN39 fl23ti32Q | |
35Z diodeContextual Info: 32E D • ISIP Ô23ta320 0Q17143 b BSS87 SIPMOS N Channel MOSFET f SIEMENS/ SPCL-, SEMICONDS - s s - • SIPMOS - enhancement mode • Drain-source voltage Vis = 240V • Continuous drain current I o = 0.29A • Drain-source on-resistance • Total power dissipation |
OCR Scan |
23ta320 0Q17143 BSS87 Q62702-S506 S53ti350 35-Z5 35Z diode | |
Contextual Info: irr BAS 19 BAS 21 Silicon Switching Diodes 32E D • Ö 23 b32 0 QQlb5Q2 3 M S I P SIEMEN S/ SPCLi SEMICONDS # High-speed, high-voltage switch Type Marking BAS 19 BAS 20 BAS 21 JP JR JS Ordering code for versions in bulk Q62702-A242 Q62702-A707 Q62702-A708 |
OCR Scan |
Q62702-A242 Q62702-A707 Q62702-A708 Q62702-A95 Q62702-A113 Q62702-A79 3AS19 fl23b320 | |
Contextual Info: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for |
OCR Scan |
023b3S0 001731e T-35-11 | |
Contextual Info: 35E D • 023b3SG NPN Silicon RF Transìstor 0Q lbflñ3 & « S IP BFP 81 _SIEMENS/ SPCLi SEMICONDS f-3<- 1*7_ • For low-noise amplifiers up to 2 GHz at collector currents from 0.5 to 25 mA. S CECC-type In preparation: CECC 50002/. ESD : Electrostatic discharge sensitive device, observe handling precautions! |
OCR Scan |
023b3SG 62702-F1 OT-143 -J250 |