FLE35T Search Results
FLE35T Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Semiconductor Group Siemens AG Consumer Electronics MOS Edition Target Specification Document number: V66100-M692-X-1 -7659 Date: 08.11.94 flE35tiDS D07c1blb 02=1 11.94 Page: ii Target Specification SDA 5650 Contents 1 General D es c rip tio n .5 |
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V66100-M692-X-1 flE35tiDS 0235hDS | |
AF139
Abstract: OOQ405 mz 1540
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OOQ405Ã AF139 Q60106-X139 200MHz- A800MHZ- AF139 10lHHz OOQ405 mz 1540 | |
cn/A/U 237 BGContextual Info: SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM Microcontroller for external ROM • Fast 32-bit division, 16-bit 2 multiplication, |
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80C517/80C537 80C517 80C537 32-bit 16-bit 80C515 cn/A/U 237 BG | |
Contextual Info: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and |
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P-DSO-28-1 | |
Contextual Info: SIEM ENS Super Multi ARGUS LED High-Current, 3 mm T1 LED, Non Diffused LSG K372, LSP K372 Besondere M erkmale • farbloses, klares Gehäuse • Kunststoffgehäuse mit spezieller Formgebung • antiparallel geschaltete Leuchtdiodenchips • besonders geeignet bei hohem Um feldlicht durch erhöhten |
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pulsfest90 | |
Contextual Info: SIEMENS BFP182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F= 1.2dB at 900MHz VPS05178 ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration |
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BFP182 900MHz 2-F1396 OT-143 2565b fiE35bD5 | |
SMD MARKING CODE E2H
Abstract: SMD MARKING CODE E4H marking code C1H SMD Q67120-C991 SAB-C501-L24N Siemens SAB-C501 siemens sm2 c947 smd marking b4h C501
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16-bit P-DIP-40, P-LCC-44 P-MQFP-44 SAB-C501 SAF-C501 256x8 C501-1R MCA01762 C501-L/C501-1R SMD MARKING CODE E2H SMD MARKING CODE E4H marking code C1H SMD Q67120-C991 SAB-C501-L24N Siemens SAB-C501 siemens sm2 c947 smd marking b4h C501 | |
Q729
Abstract: 16-DRAM Q67100-Q727
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16-Bit 514171BJ-60/-70/-80 514171BJL-60/-70/-80 6235b05 005S372 514171BJ/BJ L-60/-70/-80 16-DRAM Q729 16-DRAM Q67100-Q727 | |
Contextual Info: SIEMENS 8M x 32-Bit EDO-DRAM Module Small Outline Memory Module HYM 32V8045GD L -50/-60 Advanced Information • 72-Pin Small Outline Dual-in-Line Memory Module • 2 bank 8M x 32-bit organization • Hyper Page Mode (EDO) Operation • Performance: -50 -60 |
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32-Bit 32V8045GD 72-Pin 32V8045GDL a235bD5 01S344Ö GLD05961 fiE35t | |
Contextual Info: SIEMENS BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kfl JZL LÜ XLs UPON INQUIRY 1 =B Package o BCR 569 Pin Configuration II CO Marking Ordering Code liJ HI II |
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OT-23 | |
Siemens SLE 4442Contextual Info: SIEMENS Intelligent 256-Byte EEPROM with Write Protect Function SLE 4432 Intelligent 256-Byte EEPROM with Write Protect Function and Programmable Security Code PSC SLE 4442 Features • • • 256 x 8-bit EEPROM organization Byte-wise addressing Irreversible byte-wise write protection of lowest |
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256-Byte 23ShG5 DD5570ti GTM05362 00SS7Ã 6235b05 D0S57D6 Siemens SLE 4442 | |
q1257
Abstract: D1557 MARKING DIAGRAMS sob 214 intel schematics 150N150A intel 80386 SL MARKING CODE CKQ TI e7f01 J027 TDA 2035
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MUNICH32 1536-Kbit/s 24-channel 32-channel q1257 D1557 MARKING DIAGRAMS sob 214 intel schematics 150N150A intel 80386 SL MARKING CODE CKQ TI e7f01 J027 TDA 2035 | |
Contextual Info: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I2C Bus and Write Protection SDA 3586-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus) |
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Q67100-H5102 E1414 023SbG5 |