FLE3SB05 Search Results

5gs smd transistor

Abstract: zl ITT zener BTS 732 Zener diode 5.6 itt 410H Zener diode itt 56-4 410E2 AUTO DIODE vow Zener diode itt 150 zener diode ITT
Contextual Info: flE3Sb05 OD^ÔM? SIEM ENS 7ET • PROFEI BTS 410 H2 Smart Highside Power Switch Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current ISO Current limitation * Overload protection * Current limitation * Short circuit protection

Contextual Info: SIEM ENS BAT 14-. D Silicon Schottky Diodes • Beam lead technology • Low dimension • High performance • Medium barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 14-020 D - Q62702-D1259

Contextual Info: ÔSaSbQS D D 3 2 m b 4?E ì> SIEMENS 4 • S IE G SIEMENS AKTIENGESELLSCHAF Token Bus Modem TBM SAB 82511 Advanced Information • • • • • Carrier-band modem fully compatible with IEEE 802.4 and MAP Standard 5 and 10 Mbit/s data rate using phase-coherent FSK modulation

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 53 A • N channel • Enhancement mode Type BUZ 53 A 1000 V /d Ä|js on Package 1> Ordering Code 2.5 A 5.0 n TO-204 AA C67078-A1009-A3 Maximum Ratings Parameter Symbol Continuous drain current r c = 25 'C íí 2.5 Pulsed drain current, Tc = 25 'C

Contextual Info: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and

transistor A4t 45

Abstract: transistor A4t A4t transistor transistor A4t 2d diode a4t transistor A4t 16 A4t 07 C67078-A1307-A3 TRANSISTOR ML5 transistor a4t 15
Contextual Info: SIEMENS BUZ 50 A SIPMOS Power Transistor • N channel • E n h a n ce m e n t m ode Type Vbs <D f f DS on Package Ordering Code BU Z 50 A 1000 V 2.5 A 5 a T O -2 2 0 A B C 6 7 0 7 8-A 1 3 0 7 -A 3 Maximum Ratings Symbol Parameter Drain so u rce v o lta g e

dg7-1

Contextual Info: SIEM ENS 1M X 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM HYB 514400BJ/BT -50/-60/-70 HYB 514400BJL/BTL -50/-60/-70 Advanced Inform ation • 1 048 576 w ords by 4-bit organization 0 to 70 'C operating tem perature • Fast access and cycle tim e RAS access time:

bb 509

Abstract: 235L BSP550 Q67000-S311
Contextual Info: m 0235bOS OOfllbMb 13b SIEMENS BSP 550 M iniSm art • • • • • • • • • • • • H igh-side switch S hort-circuit protection Input protection O vertem perature p rotection w ith hysteresis . O verload protection O ve rvoltage protection S w itching inductive load

NTC 4,7 Siemens

Abstract: HT 1200-4 S041E Q7101-H6615 siemens slic DBM01 qsicos-program S-041 S041 E siemens 58 295 84 pin chip
Contextual Info: S IE M E N S Four Channel Codec Filter SICOFP-4 PEB 2465 Preliminary Data 1.1 CMOS Features or PABX-channels Specification according to rele\ LSSGR recommendations Digital signal processing technique Programmable interface optimizf SLICs and transform er solutions

3tb 50 siemens

Contextual Info: SIEMENS 5-V Low-Drop Fixed Voltage Regulator TLE 4278 G Features • • • • • • • • • • • • Output voltage tolerance < ±2% Very low current consumption Separated reset and watchdog output Low-drop voltage Watchdog Adjustable watchdog activating threshold

Contextual Info: SIEMENS C166-Family of High-Performance CMOS 16-Bit Microcontrollers C163-L Data Sheet C163-L • • • • • • • • • • • • • • 16-Bit Microcontroller High Performance 16-bit CPU with 4-Stage Pipeline - 80 ns Instruction Cycle Time at 25 MHz CPU Clock

SIEMENS rwc 62

Abstract: Q67100-Q1029
Contextual Info: SIEM E N S 4M X 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BJL -50/-60/-70 Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 ”C operating temperature • Fast Page Mode Operation • Performance: -50 -60 ¿RAC

transistor smd bc rn

Abstract: SMD transistor BC RN VEI 005
Contextual Info: SIEMENS Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Preliminary Data Bipolar 1C Features • • • • • • • • • Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable

Contextual Info: SIEM ENS Multipoint Switching and Conferencing Unit MUSAC PEB 2245 Preliminary Data 1 CMOS 1C Features Switching • Time/space switch for 2048-, 4096- or 8192-kbit/s PCM systems • Switching of up to 512 incoming PCM-channels to up to 256 outgoing PCM channels

IC 24c08

Abstract: 24C08 24c16 EEPROM 24c16 wp IC 24c08 contain sla 24c eeprom 24C16 5 pin MEMORY EEPROM 24C08 Q67100-H3520 24C08 WP
Contextual Info: S IE M E N S m fl23SbDS DQC,fiCiô6 b77 8/16 K bit 1024/2048 x 8 bit Serial C M O S E E P R O M s, I 2C S yn ch ro no u s 2-W ire Bus, Page Protection Mode SLx 24C 08/16/P Preliminary Features • Data EEPROM internally organized as 1024/2048 bytes and 64/128 pages x 16 bytes

m43of

Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
Contextual Info: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version

KBP 2060

Abstract: ugse2 Siemens PEB 2040 T7G "direct replacement" ic marking code 2041 G0522 siemens RS 2041 j
Contextual Info: t SIEMENS AKTIENGESELLSCHAF bSE D • ÖS3SbDS 00 52 1 7 4 7fl=î * S I E 6 SIEMENS ICs for Communications PEB 2041 Memory Time Switch Replacement MTSR Rev. 1.0 Technical Manual 12.91 SIEMENS AKTIENGESELLSCHAF bSE j> m fi2 3SbDS Q0S2175 b l S « S I E G

ssl 110 sn

Abstract: sda 9205 DG533 ELLS 110
Contextual Info: bSE T> m ÖS3SbüS DG53351 130 « S I E G SIEM ENS SIEMENS AKT IENG ES ELLS CH AF Triple 8-Bit Analog-to-Digital Converter SDA 9205 CMOS 1C Preliminary Data Features • Three equivalent CMOS A/D converters on chip • 30-MHz sample rate • 8-bit resolution

MARKING CODE SMD IC s111

Abstract: smd marking KD vj6t afq1 235L AEP02151 Q67006-A9309 S111 TLE4470 MARKING CODE SMD S111
Contextual Info: SIEM ENS fl23Sb05 G G tlb72ti 4^2 D ual Low -D rop V o ltage R egu lato r TL E 4 470 Target Data Sheet Features Wide operation range: 6 V to 40 V Stand-by output 50 mA; 2 % accuracy Adjustable reset switching threshold Main output 300 mA; 2 % accuracy Main output tracked to the stand-by output

BSP350

Abstract: S227 siemens 350 98 GPS05581 Q67000-S227 BSP 350
Contextual Info: SIEM EN S Mini Smart Preliminary data • • • • • • • • • BSP 350 High-side Switch Short-circuit protection Overtem perature protection Overload protection Reverse battery protection Switching inductive load Clam p of negative output voltage with inductive loads

MIP211

Abstract: LSC series Microcontroller by MOTOROLA 007011 siemens Motorola LSC microcontroller ITP05590 siemens modules GR 60 48 V 120 A dtmfgenerator B2M marking Q67100-H6458 converter siemens modules GR 60 48 V 120 A
Contextual Info: SIEMENS Audio Ringing Codec Filter Featuring Speakerphone Function ARCOFI -SP PSB 2163 Preliminary Data BICMOS-IC 1 • • • • • • • • • • • • • • • • • • • • Features Applications in digital terminal equipment featuring voice

smd code book transistor

Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE 5c smd transistor c015 P-T0252-3-1 D 92 M - 02 DIODE SMD TRANSISTOR MARKING 5c all transistor book SMD TRANSISTOR MARKING fq smd code book KO
Contextual Info: BSP 92 Infineon t « c h n o l o g i •* SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Pin 1 Type ^bs b BSP 92 -240 V -0.2 A Type BSP 92 Ordering Code Q62702-S653 Pin 2 °D S (on) Package

BTS113-A

Contextual Info: SIEMENS TEMPFET BTS113A Features • • • • • N channel Logic level Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab Pin Type BTS113A v DS 60 V h 11.5 A ^DS on 0.17 i i 1 2 3 G D S

Contextual Info: FS: 11/92 Page A . 1 SIEMENSAG preliminary DATA-SHEET TUA 4300 Table of Contents ONE CHIP CAR RADIO Differences to the last edition Page O.b Table of Contents Page A.1 Functional Description, Application Page B .2. B.3 Circuit Description Page C .4. C.5