Untitled
Abstract: No abstract text available
Text: HANBit HFDOM40S3Rxxx 40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S3Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S3Rxxx
40Pin
512MB,
HFDOM40S3Rxxx
HFDOM40S3R-xxx
512MByte
DOM40S3R128
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM44S3Rxxx 44Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S3Rxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM44S3Rxxx
44Pin
512MB,
HFDOM44S3Rxxx
HFDOM44S3R-xxx
512MByte
DOM44S3R128
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TFBGA107
Abstract: ddr flash "ready not busy" BGA bga 10x13 NAND FLASH BGA NAND*N M65KA512AB NAND01G-N NAND01GR3N6 NAND01GR4N5 NAND01G
Text: NAND01G-N 1 Gbit x8/x16 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package PRELIMINARY DATA Features summary • Multi-chip Package – NAND Flash Memory – 512 Mbit or 1 Gbit (x8/x16) Large Page Size NAND Flash Memory
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NAND01G-N
x8/x16)
TFBGA107
ddr flash "ready not busy"
BGA bga 10x13
NAND FLASH BGA
NAND*N
M65KA512AB
NAND01G-N
NAND01GR3N6
NAND01GR4N5
NAND01G
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128Gb Nand flash toshiba
Abstract: THNAT640MBAI 13AH backup file block signal flash ata 16 mb pcmcia THNAT1G53BAI toshiba nand flash 640MB THNAT016MBAI toshiba 128gb nand flash
Text: Preliminary version THNATxxxxBAI Series THNATxxxx THNATxxxxB ATxxxxBAI Series Flash Memory Card ATA OUTLINE The THNAT*BAI series Flash Memory Card ATA is a flash technology based with ATA interface memory card. It is constructed with flash disk controller chip and Toshiba NAND flash memory device. The Flash Memory Card
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128MB,
192MB,
256MB,
320MB,
512MB,
640MB,
768MB,
128Gb Nand flash toshiba
THNAT640MBAI
13AH
backup file block signal flash ata 16 mb pcmcia
THNAT1G53BAI
toshiba nand flash
640MB
THNAT016MBAI
toshiba 128gb nand flash
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TOSHIBA flash memory
Abstract: Toshiba flash 40hor41h
Text: THNIDxxxxBx Series Rev.1.1 NAND Flash Drive - THNIDxxxxBx Series -OUTLINE The NAND Flash Drive THNIDxxxxBx series is Toshiba’s flash memory drive having IDE interface which features a flash disk controller chip and NAND-type flash memory devices. There are two types of form factors,
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128MB,
192MB,
256MB,
320MB,
384MB,
512MB,
640MB,
1024MB,
1536MB
2048MB
TOSHIBA flash memory
Toshiba flash
40hor41h
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AN2365
Abstract: AN1793
Text: AN2365 Application note Migrating from a Chip Enable Care to a Chip Enable Don’t Care NAND Flash memory 1 Introduction Today, all Single Level Cell SLC , Small Page and Large Page NAND Flash memories offered by STMicroelectronics are Chip Enable Don’t Care. They are built-in with the Chip
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AN2365
AN2365
AN1793
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Untitled
Abstract: No abstract text available
Text: HANBit HFDOM44S6Vxxx 44Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S6Vxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM44S6Vxxx
44Pin
128MB
HFDOM44S6Vxxx
HFDOM44S6V-xxx
seri2005)
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377H
Abstract: No abstract text available
Text: HANBit HFDOM40S6Rxxx 40Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Rxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S6Rxxx
40Pin
128MB
HFDOM40S6Rxxx
HFDOM40S6R-xxx
DOM40S6R128
377H
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flash disk
Abstract: SEC130
Text: HANBit HFDOM44S6Rxxx 44Pin Flash Disk Module Min.128MB ~ Max.4G, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM44S6Rxxx series 44Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM44S6Rxxx
44Pin
128MB
HFDOM44S6Rxxx
HFDOM44S6R-xxx
DOM44S6R128
flash disk
SEC130
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2Gbyte NAND flash
Abstract: No abstract text available
Text: HANBit HFDOM40S6Vxxx 40Pin Flash Disk Module Min.128MB ~ Max.3GB, True IDE Interface 1. PRODUCT OVERVIEW GENERAL DESCRIPTION The HFDOM40S6Vxxx series 40Pin Flash Disk Module is a flash technology based with True IDE interface flash memory card. It is constructed with flash disk controller chip and NAND-type Samsung flash memory device. The
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HFDOM40S6Vxxx
40Pin
128MB
HFDOM40S6Vxxx
HFDOM40S3V-xxx
2Gbyte NAND flash
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samsung 8Gb nand flash
Abstract: oneNand onenand xsr eXtended Sector Remapper oneNand flash SRAM-512Mb samsung NAND FLASH BGA NAND FLASH BGA samsung 2GB Nand flash samsung xsr
Text: Samsung OneNAND Flash Fusion Memory Featuring High-Density NAND Flash with a NOR Interface Samsung OneNAND™ Flash What is OneNAND? OneNAND for Handsets Samsung’s OneNAND meets the memory-hungry needs of next-generation devices by providing a single-chip flash
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108MB/s
256Mb
BR-06-NAND-001
samsung 8Gb nand flash
oneNand
onenand xsr
eXtended Sector Remapper
oneNand flash
SRAM-512Mb
samsung NAND FLASH BGA
NAND FLASH BGA
samsung 2GB Nand flash
samsung xsr
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tc58nc
Abstract: tc58nc344 TC58NC344CF SmartMedia Logical Format LBA24 DD10 DD11 DD12 DD15 ata commands
Text: TC58NC344CF TC58NC344CF 1Chip Small Flash Disk Controller OUTLINE * TC58NC344CF is a 1chip Small Flash Disk Controller which has PC Card ATA and IDE Interfaces. TC58NC344CF is TM 1 chip small flash disk controller which can connect one 8M to 1G NAND Flash Memory and SmartMedia
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TC58NC344CF
TC58NC344CF
128Mbyte
TC58NC344
tc58nc
tc58nc344
SmartMedia Logical Format
LBA24
DD10
DD11
DD12
DD15
ata commands
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THNCF128MMA
Abstract: THNCF512MMA cf 44 pin to ide 1.8 THNCF064MMA THNCF256MMA THNCF768MMA 44 pin ide to 40 pin ide
Text: THNCFxxxxMA Series Preliminary TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card DESCRIPTION The THNCFxxxxMA series CompactFlash™ card is a flash technology based with ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type 䋨Toshiba䋩 flash memory device. The
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512MB,
768MB
THNCF128MMA
THNCF512MMA
cf 44 pin to ide 1.8
THNCF064MMA
THNCF256MMA
THNCF768MMA
44 pin ide to 40 pin ide
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THNCF064MMA
Abstract: THNCF128MMA THNCF256MMA THNCF512MMA THNCF768MMA SANDISK NAND ID code SANDISK 16bit
Text: THNCFxxxxMA Series Preliminary TENTATIVE TOSHIBA SMALL FORM FACTOR CARD CompactFlash Card DESCRIPTION The THNCFxxxxMA series CompactFlash™ card is a flash technology based with ATA interface flash memory card. It is constructed with flash disk controller chip and NAND-type （Toshiba） flash memory device. The
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512MB,
768MB
THNCF064MMA
THNCF128MMA
THNCF256MMA
THNCF512MMA
THNCF768MMA
SANDISK NAND ID code
SANDISK 16bit
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Untitled
Abstract: No abstract text available
Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage
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EN71SN10F
512-Mbit
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Untitled
Abstract: No abstract text available
Text: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage
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EN71SN10E
256-Mbit
16bit
16bit
32cations.
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Untitled
Abstract: No abstract text available
Text: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage
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EN71SN10E
256-Mbit
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Untitled
Abstract: No abstract text available
Text: EN71SN10E EN71SN10E 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 256-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage
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EN71SN10E
256-Mbit
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nor flash 1.8V
Abstract: PSRAM M36P0R9060E0 M58PR512J
Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M36P0R9060E0
TFBGA107
108MHz,
66MHz
nor flash 1.8V
PSRAM
M36P0R9060E0
M58PR512J
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Untitled
Abstract: No abstract text available
Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 107 balls FBGA Area: 10.5x13 mm; Height: 1.2 mm • Operating Voltage
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EN71SN10F
512-Mbit
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Untitled
Abstract: No abstract text available
Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage
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EN71SN10F
512-Mbit
16bit
16bit
32Down
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S29WS256N
Abstract: S71WS512NE0BFWZZ
Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip
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S71WS512NE0BFWZZ
S71WS512
S29WS256N
54MHz
128Mb
96-ball
S71WS512NE0BFWZZ
S29WS256N
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PSRAM
Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
Text: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory
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M36P0R9060E0
TFBGA107
108MHz,
66MHz
PSRAM
M36P0R9060E0
M58PR512J
M69KB096AM
M58PRxxxJ
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Untitled
Abstract: No abstract text available
Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage
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EN71SN10F
512-Mbit
16bit
16bit
32Down
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