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FUJITSU Limited FLC097WF RF POWER FIELD-EFFECT TRANSISTOR, 1-ELEMENT, C BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	FLC097WF		4			1 $66 10 $62.7 100 $62.7 1000 $62.7 10000 $62.7	Buy Now

FLC097WF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
FLC097WF		Fujitsu	C-Band Power GaAs FET		Original	PDF	92.17KB	4
FLC097WF-E1		Fujitsu	FET: P Channel: ID 0.45 A		Original	PDF	92.17KB	4

FLC097WF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general	Original	FLC097WF FLC097WF	PDF
power dissipation fet 400W Contextual Info: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: hadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general	Original	FLC097WF FLC097WF FCSI0598M200 power dissipation fet 400W	PDF
FLC097WF Contextual Info: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general	Original	FLC097WF FLC097WF	PDF
FLC097WF Contextual Info: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general	Original	FLC097WF FLC097WF FCSI0598M200	PDF
Contextual Info: FLC097WF - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-\|<jB = 28.8dBm Typ. High Gain: G ^ b = 8.5dB(Typ.) High PAE: riadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package	OCR Scan	FLC097WF FLC097WF FCSI0598M200	PDF
Contextual Info: FLC097WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 28.8dBm Typ. High Gain: G1dB = 8.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general	Original	FLC097WF FLC097WF	PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME	PDF