Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FLK017WF Search Results

    FLK017WF Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FLK017WF
    Eudyna Devices X, Ku Band Power GaAs FET Original PDF 108.64KB 4
    FLK017WF-E1
    Fujitsu FET: P Channel: ID 0.09 A Original PDF 103.08KB 4
    SF Impression Pixel

    FLK017WF Price and Stock

    Sumitomo Wiring Systems LTD

    Sumitomo Wiring Systems LTD FLK017WF

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA FLK017WF 11
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    FLK017WF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general


    Original
    FLK017WF FLK017WF PDF

    16GHZ

    Abstract: FLK017WF
    Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general


    Original
    FLK017WF FLK017WF 16GHZ PDF

    Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general


    Original
    FLK017WF FLK017WF PDF

    FLK017WF

    Abstract: fujitsu gaas fet
    Contextual Info: FLK017WF - X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G-j^B = 7.5dB(Typ.) High PAE: r iadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package


    OCR Scan
    FLK017WF FLK017WF FCSI0598M200 fujitsu gaas fet PDF

    Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general


    Original
    FLK017WF FLK017WF FCSI0598M200 PDF

    FLK017WF

    Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general


    Original
    FLK017WF FLK017WF FCSI0598M200 PDF

    Band Power GaAs FET

    Abstract: Flk017wf ku 606 ku 201
    Contextual Info: FLK017WF X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 20.5dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 26%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK017WF is a power GaAs FET that is designed for general


    Original
    FLK017WF FLK017WF Band Power GaAs FET ku 606 ku 201 PDF

    CD 294

    Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
    Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package


    OCR Scan
    FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet PDF

    FLL57MK

    Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
    Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.


    Original
    FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME PDF