FLL600IQ Search Results

Contextual Info: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that

FLL600IQ-2C

Abstract: FET 748
Contextual Info: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
Contextual Info: FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 6 W Average • Easy tuning for Power, WCDMA ACPR and IMD • Over 60 Watts Pout over entire band

FLL600IQ-3

Contextual Info: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that

FLL600IQ-2

Contextual Info: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which

Eudyna Devices power amplifiers

Abstract: FLL600IQ-2 eudyna GaAs FET Amplifier
Contextual Info: FLL600IQ-2 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which

Fujitsu GaAs FET Amplifier design

Abstract: FLL600IQ-2C
Contextual Info: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that

Fujitsu GaAs FET Amplifier design

Abstract: Fujitsu GaAs FET Amplifier fujitsu gaas fet
Contextual Info: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that

FLL600IQ-3

Contextual Info: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that

FLL600IQ-3

Contextual Info: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that

fujitsu l-band power fets

Contextual Info: çO FLL600IQ-3 *"UJI * L-Band Medium & High Power GaAs FETs FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Broad Frequency Range: 2000 to 2700 MHz. High PAE: 43%. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that

Contextual Info: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which

Contextual Info: FLL600IQ-3 - L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation.

FLL600IQ-2

Contextual Info: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which

Contextual Info: FLL600IQ-2 rU JII b U L-Band Medium & High Power GaAs FETs FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design that

FLL600IQ-2C

Contextual Info: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that

L-Band

Abstract: 842 FET
Contextual Info: FLL600IQ-2 L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which

FET 748

Abstract: FLL600IQ-3
Contextual Info: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that

L-Band

Abstract: Eudyna Devices power amplifiers
Contextual Info: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that

Contextual Info: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which

Contextual Info: FLL600IQ-2 FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which

FLL600IQ-2C

Abstract: Fujitsu GaAs FET Amplifier
Contextual Info: FLL600IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 60W Typ. High PAE: 51% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2C is a 60 Watt GaAs FET that employs a push-pull design that

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

FLL57MK

Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.