FLOOR DRAIN Search Results
FLOOR DRAIN Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TC75S59F |
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Comparator, 1.8V to 7.0V, IDD=100μA, Open-drain output, SOT-25/SOT-353 |
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TC75S58F |
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Comparator, 1.8V to 7.0V, IDD=10μA, Open-drain output, SOT-25/SOT-353 |
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TCTH011BE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type |
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TCTH022BE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function |
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TCTH021BE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type |
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FLOOR DRAIN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TECHNICAL BULLETIN TB-3057 Statguard Floor Mat Cleaner Application Instructions Made in the United States of America Description Desco’s Statguard® Floor Mat Cleaner is a non-hazardous, silicone free liquid used to remove dust, grease, grime, shoe prints, and other contaminates from ESD floor mats to |
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TB-3057â TB-3057 | |
Contextual Info: HMC905LP3E v01.0414 FREQUENCY DIVIDERS & DETECTORS - SMT 4 6 GHz LOW NOISE PROGRAMMABLE DIVIDER N = 1 to 4 Typical Applications Features The HMC905LP3E is ideal for: • LO Generation with Low Noise Floor Low Noise Floor: -164 dBc/Hz at 10 MHz Offset for N = 4 |
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HMC905LP3E HMC905LP3E | |
Contextual Info: DESCO INDUSTRIES INC. Technical Bulletin TB-7042 Statguard Static Dissipative Floor Finish Application Instructions & MSDS Made in the United States of America General Guidelines Statguard® Floor Finish eliminates triboelectric generated charges above 100V before costly damage |
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TB-7042 TB-7042 | |
HMC860LP3EContextual Info: HMC905LP3E v00.0310 6 GHz LOW NOISE PROGRAMMABLE DIVIDER N = 1 to 4 FREQUENCY DIVIDERS & DETECTORS - SMT 4 Typical Applications Features The HMC905LP3E is ideal for: Low Noise Floor: -164 dBc/Hz at 10 MHz Offset for N = 4 • LO Generation with Low Noise Floor |
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HMC905LP3E HMC905LP3E HMC860LP3E | |
Contextual Info: HMC794LP3E v01.0612 Frequency Dividers & Detectors - SMT 2 GHz LOW NOISE PROGRAMMABLE DIVIDER N = 1 to 4 Typical Applications Features The HMC794LP3E is ideal for: Low Noise Floor: -163 dBc/Hz at 10 MHz offset and -160 dBc/Hz at 100 kHz offset • LO Generation with Low Noise Floor |
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HMC794LP3E HMC794LP3E | |
HMC794LP3E
Abstract: R4727 MABACT0065 hmc794
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HMC794LP3E HMC794LP3E R4727 MABACT0065 hmc794 | |
Contextual Info: HMC905LP3E v00.0310 Frequency DiviDers & Detectors - sMt 4 6 GHz LOW NOISE PROGRAMMABLE DIVIDER N = 1 to 4 Typical Applications Features the HMc905LP3e is ideal for: Low noise Floor: -164 dBc/Hz at 10 MHz offset for n = 4 • Lo Generation with Low noise Floor |
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HMC905LP3E HMC905LP3E | |
HMC905LP3E
Abstract: HMC860LP3E HMC860LP3
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HMC905LP3E HMC905LP3E HMC860LP3E HMC860LP3 | |
HMC794LP3E
Abstract: MABACT0065 microwave meter schematic diagram
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HMC794LP3E HMC794LP3E MABACT0065 microwave meter schematic diagram | |
Contextual Info: HMC794LP3E v01.0612 Frequency DiviDers & Detectors - sMt 2 GHz LOW NOISE PROGRAMMABLE DIVIDER N = 1 to 4 Typical Applications Features the HMc794LP3e is ideal for: Low noise Floor: -163 dBc/Hz at 10 MHz offset and -160 dBc/Hz at 100 kHz offset • LO Generation with Low Noise Floor |
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HMC794LP3E HMC794LP3E | |
ASTM-F-150
Abstract: SS-T-312B manufacturing process calcium chloride e648 101B F1066-99 vinyl tiles ASTMF-150 sd 8405 tile adhesive 109
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FL 210 transistor
Abstract: LF2805A 1000 MHz transistor 5W RF TRANSISTOR 1 WATT transistor 5w
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LF2805A L-560 FL 210 transistor LF2805A 1000 MHz transistor 5W RF TRANSISTOR 1 WATT transistor 5w | |
FTMS 101B
Abstract: STM 97.2 STM 97.1 TB-2083 SA6524
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TB-2088 HDBK-263A. TB-2080. TB-2088 FTMS 101B STM 97.2 STM 97.1 TB-2083 SA6524 | |
UF2815OJContextual Info: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C |
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UF2815OJ -65to UF2815OJ | |
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UF2820P
Abstract: UF282OP PO520 Series PVI equivalent
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UF2820P -55to UF2820P UF282OP PO520 Series PVI equivalent | |
transistor v2w
Abstract: transistor C 2240 TRANSISTOR 500 PL031 TT 2240
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LF281 rt-l-970' transistor v2w transistor C 2240 TRANSISTOR 500 PL031 TT 2240 | |
RTC6591
Abstract: RTC6581 6591
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RTC-658X/RTC-659X RTC6591 RTC6581 6591 | |
AN40005
Abstract: MIL-STD-1686C
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AN-40-005) AN-40-005 M150261 AN40005 MIL-STD-1686C | |
f2f decoder ic
Abstract: ET6103 f2f decoder circuit f2f chip msr 900 reader Etrend Electronic magnetic strip reader f2f decoder ic triple pos MAGNETIC HEAD reader circuit 2f decoder
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ET6103 ET6103 f2f decoder ic f2f decoder circuit f2f chip msr 900 reader Etrend Electronic magnetic strip reader f2f decoder ic triple pos MAGNETIC HEAD reader circuit 2f decoder | |
AMP 346859-1
Abstract: krone block 10 pairs pimf pimf cat 6 cable cable CAT.6 F/ftp pimf krone INGF-033 block krone Krone LSA-Plus 346859-1
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06/Feb/2008 ESE0-0020-05. INGF-033 AMP 346859-1 krone block 10 pairs pimf pimf cat 6 cable cable CAT.6 F/ftp pimf krone INGF-033 block krone Krone LSA-Plus 346859-1 | |
Contextual Info: LMK03200 www.ti.com SNAS478C – JULY 2009 – REVISED APRIL 2013 LMK03200 Family Precision 0-Delay Clock Conditioner with Integrated VCO Check for Samples: LMK03200 1 Introduction 1.1 Features 12 • Integrated VCO with Very Low Phase Noise Floor • Integrated Integer-N PLL with Outstanding |
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LMK03200 SNAS478C LMK03200 | |
UF284OPContextual Info: an =y FE AMP comDanv RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF284OP Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor . . Absolute Maximum Ratings at 25°C |
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UF284OP lOOW42SV. wlF25oNNsmr-RmDco~ lsTum5ra22AvGvw UF284OP | |
MIL-STD-1686C
Abstract: antistatic shoes an-40-005 JESD625-A M88352 MIL-HDBK-263 vinyl tiles JESD625A ionizer AN40005
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AN-40-005) MIL-HDBK-263 MIL-STD-1686C JESD625-A AN-40-005 M88352 AN40005 MIL-STD-1686C antistatic shoes JESD625-A M88352 MIL-HDBK-263 vinyl tiles JESD625A ionizer | |
Contextual Info: A m ßan A McP com c pany m RF MOSFET Power Transistor, 10W, 28V 100-500 MHz UF2810P V2.00 Features • N-Channel Enhancement Mode Device • DMOS Structure • • • • l.ower Capacitances for Broadband Operation Common Source Configuration I.ower Noise Floor |
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UF2810P UF8610P |