FLYBACK XFMR 3.5 MH Search Results

8 pin flyback transformer 13-1296

Abstract: 615a4 EF16 transformer 615A-4 cell phone charger flyback xfmr 3.5 mh flyback cell phone ac charger 2W flyback transformer 1N4007 1N4148
Contextual Info: DN06017/D Design Note – DN06017/D Efficient, Low Cost, Low Standby Power <100 mW , 2.5 W Cell Phone Charger Device Application Input Voltage Output Power Topology I/O Isolation NCP1011 Cell Phone Charger 90 – 270 Vac 2.5 W Flyback Yes Other Specifications

Contextual Info: Application Note 1039 Design and Application Notes for AP3768 System Solution Prepared by Liu Lei System Engineering Dept. 1. Introduction The AP3768 is the generation II Primary Side Regulation PSR controller, which uses Pulse Frequency Modulation (PFM) method to realize

AP3765

Abstract: k385
Contextual Info: Application Note 1064 Design and Application Notes for AP3765 System Solution Prepared by Sun Jun Jie System Engineering Dept. charger criteria with AP3765 system solution. 1. Introduction The AP3765 uses Pulse Frequency Modulation PFM method to realize Discontinuous Conduction Mode

spice model three phase TRANSFORMER

Abstract: Spice model xfmr xfmr spice alimentation decoupage spice model 1n4148 Christophe Basso SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG three winding transformer MTD1N60E MUR1100E
Contextual Info: MOTOROLA Order this document by AN1679/D SEMICONDUCTOR APPLICATION NOTE AN1679 How to deal with Leakage Elements in FLYBACK Converters Christophe BASSO, MOTOROLA SPS BP–1029, Le Mirail, 31023 Toulouse France e–mail: R38010@email.sps.mot.com; Tel.: 33 5 61 19 90 12

IRF730A

Abstract: SiHF730A-E3 SiHF730A flyback xfmr 3.5 mh
Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

transformer 230v to 35v

Contextual Info: CDB1611A-8W CDB1611A-8W 8 Watt Demonstration Board Features General Description • Quasi-resonant Flyback with Constant-current Output • Rated Input Power: 7.7W The CDB1611A-8W reference design demonstrates the performance of the CS1611A resonant mode AC/DC

Contextual Info: CRD1611A-8W CRD1611A-8W 8 Watt Reference Design Features General Description • Quasi-resonant Flyback with Constant-current Output The CRD1611A-8W reference design demonstrates the performance of the CS1611A resonant mode AC/DC dimmable LED driver IC with a 550mA output driving

spice model three phase TRANSFORMER

Abstract: three-winding transformer SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG 3 phase to d-q transformation spice offline switchmode -flyback spice model mesh TRANSFORMER 1N4937 pspice spice model of power TRANSFORMER AN1679 xfmr spice
Contextual Info: AN1679/D How to deal with Leakage Elements in Flyback Converters http://onsemi.com Prepared by: Christophe Basso ON Semiconductor 14, rue Paul Mesplé – BP1112 – 31035 TOULOUSE Cedex 1, France 33 0 5 34 61 11 54 e–mail: christophe.basso@onsemi.com INTRODUCTION

AN1001

Abstract: IRF730A SiHF730A SiHF730A-E3
Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC)

Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 5.5 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Qg (Max.) (nC) 22 Qgs (nC)

flyback xfmr 3.5 mh

Contextual Info: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt

IRF730AL

Abstract: IRF730AS SiHF730AL SiHF730AS SiHF730AS-E3 SiHFL014T-E3 flyback xfmr 3.5 mh
Contextual Info: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration

three-winding transformer

Abstract: spice model three phase TRANSFORMER three-winding power transformer Spice model xfmr switching transformer winding Christophe Basso smps transformer design 3 phase to d-q transformation spice SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG IC SEM 2005
Contextual Info: AN1679/D How to deal with Leakage Elements in Flyback Converters Prepared by: Christophe Basso ON Semiconductor http://onsemi.com APPLICATION NOTE Introduction Several ways exist to depict how the magnetic variables are organized within the transformer. The reluctance method

spice model three phase TRANSFORMER

Abstract: AN1679 Christophe Basso three-winding transformer Spice model xfmr spice model mesh TRANSFORMER SEM500 spice model of power TRANSFORMER Severns spice model 1n4148
Contextual Info: AN1679/D How to deal with Leakage Elements in Flyback Converters http://onsemi.com Prepared by: Christophe Basso ON Semiconductor 14, rue Paul Mesplé – BP1112 – 31035 TOULOUSE Cedex 1, France 33 0 5 34 61 11 54 e–mail: christophe.basso@onsemi.com INTRODUCTION

flyback xfmr 3.5 mh

Contextual Info: IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 400 RDS(on) (Max.) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration

AN1001

Abstract: IRF730A
Contextual Info: PD - 91902A IRF730A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

Contextual Info: PD-91902 IRF730A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

AN1001

Contextual Info: PD - 94976 IRF730APbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

TRANSISTOR marking ar code

Abstract: AN1001 AN-994 IRF730A IRL3103L
Contextual Info: PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

flyback xfmr 3.5 mh

Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

PZT amplifier

Abstract: UCC2975 UCC2975PW UCC2976 UCC2976PW UCC2977 UCC3975 UCC3976 UCC3977 low profile transformer ccfl driver
Contextual Info: UCC2975, UCC2976, UCC2977 UCC3975, UCC3976, UCC3977 SLUS499A – NOVEMBER 2001 – REVISED JANUARY 2002 MULTIĆTOPOLOGY PIEZOELECTRIC TRANSFORMER CONTROLLER FEATURES D 3-V to 13.5-V Operation D Supports Flyback UCC3975 , Half-Bridge D D D D D DESCRIPTION

PZT driver design

Contextual Info: UCC2975, UCC2976, UCC2977 UCC3975, UCC3976, UCC3977 SLUS499 – NOVEMBER 2001 MULTIĆTOPOLOGY PIEZOELECTRIC TRANSFORMER CONTROLLER FEATURES D 3-V to 13.5-V Operation D Supports Flyback UCC3975 , Half-Bridge Liquid crystal display (LCD) enclosures and cold

Contextual Info: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt