FM 513 DIODE Search Results

KV1720R

Abstract: KV1720RTL KV1720S KV1720STL kv1720 34-1P
Contextual Info: POWER&RF Variable capacitance diode for FM tuning FMチューナ用電圧可変容量ダイオード KV1720R/S FEATURES „ Included Twin Element „ ツインタイプ素子1組搭載 „ Very Small Tolerance of Element Being Next Device To Each Other „ 小さい隣接デバイス間容量偏差

Contextual Info: HL1221AC Laser Diode Description H L 1221A C is a 1.2 fim In G aA sP laser diode with d o u b le h etero ju n ctio n stru ctu re. It is su itable as a light source in fiberoptic c o m ­ m u n icatio n s and various o th er types o f optical e q u ip m en t.

BAY46

Abstract: BAY44 Diode BAY 55 BAY45 Diode BAY 46 Q60201-Y46 Q60201-Y45 BAY 45 Q60201-Y44
Contextual Info: S ilizium -U niversaldio den m it niedrigem S p errstrom BAY 44 BAY 45 -BAY 46 Die Silizium -Dioden BAY 44, BAY 45 und BAY 46 im Glasgehäuse 51 A2 DIN 41880 D O -7 ,

BGY46B

Abstract: TRANSISTOR regulator fm 513 diode piezoelectric mobile charger Analog Voice scrambler dtmf interface with microcontroller DTMF mobile fm operational amplifier SA612 All Microphone
Contextual Info: Philips Semiconductors Semiconductors for Telecom systems Alphanumeric index page BGY46A UHF power amplifier module 42 BGY46B UHF power amplifier module 43 BGY47A UHF power amplifier module 44 BGY95A/B UHF amplifier module 45 BGY96A/B UHF amplifier module

am29701

Abstract: AM27S06 AM27S07 AM27S06ADC AM27S06ADM AM27S06AFM AM27S06APC AM27S07ADC AM27S07ADM AM27S07AFM
Contextual Info: Am27S06 • Am27S07 Non-Inverting Schottky 64-Bit Random Access Memories D IS T IN C T IV E C H A R A C TER IS TIC S F U N C T IO N A L DESCRIPTIO N • • • • The A m 2 7 S 0 6 and Am 27S 07 are 6 4 -b it R A M s b u ilt using S c h o ttk y diode clam ped transistors in c o n ju n c tio n w ith in ternal EC L c irc u itry

30P60

Contextual Info: SGS-THOMSON ê œ H J C T fM O û S B Y T 6 0 P -2 0 0 -> 4 0 0 FAST RECOVERY RECTIFIER DIODES • VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SW ITCHING LOSSES ■ LOW NOISE TURN-OFF SW ITCHING Cathode connected to case DOP 3 (Plastic iUITABLE APPLICATIO N S

transistor D 982

Abstract: TDA7050 All Microphone tda7052 ic POCSAG Receiver piezoelectric mobile charger "true Logarithmic Amplifier" TDA7052 Audio power amplifier IC tda7052
Contextual Info: Philips S em iconductors Semiconductors for Telecom systems Functional index page SPEECH/TRANSMISSION CIRCUITS PCA1070 programmable analog CMOS transmission IC 339 TEA1060/1061 versatile telephone transmission circuits with dialler interface; TEA1060: low impedance input for dynamic and magnetic

SMPS CIRCUIT DIAGRAM 5V 20A

Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Contextual Info: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

ultrafast diode 10a 400v

Abstract: X 0238 CE
Contextual Info: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

ba 513 diode

Contextual Info: M A XIM U M RATINGS Rating Symbol Value Vr 75 Vdc If 200 m Adc *FM surae 500 mA Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Unit BAS16LT1* CASE 318-07, STYLE 8 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Symbol

1N1611AR

Abstract: UHF diode 1N830A DIODE KU 105 D Silicon Point Contact Diode 1N358R
Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R 4flE D • 0 5 6 5 4 4 3 Q 0 0 1 1 7 0 bfl? ■ ALP Silicon Point Contact Detector Diodes 'Tcr>o7 Features ■ Broadband Operation ■ Bias Not Required Description Matched Pairs Alpha’s point contact detector diodes are designed

ir igbt 1200V 40A

Abstract: 20MT120UF E78996 bridge
Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Diode C219

Abstract: resistance 220 ohm diode 1n6
Contextual Info: International lï»RjRectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT H a lf-B rid g e VCE = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail"

Contextual Info: 20A Avg. 60 Volts SBD C20T06QH •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitive Peak Surge Reverse Voltage

C20T06QH

Contextual Info: 20A Avg. 60 Volts SBD C20T06QH •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage くり返しピークサージ逆電圧 Repetitive Peak Surge Reverse Voltage

diode skmd 40 f 10 semikron

Abstract: IR 421F SKMD42F10 SKKD42F15 SKKD42F10 SKKD42F SKKD42F12 SKKD42F14 SKMD42F SKND42F
Contextual Info: S IE D • Ö13bb71 00D3421 BID « I S E K G SEMIKRON SËÎÏIIKRON INC V rsm V rrm Ifrms maximum value for continuous operation 120 A V Ifav (sin. 180; Tease =85°C;50Hz) 42 A 1000 SKKD42F 10 SKMD 42 F 10 SKND42F 10 1200 SKKD42 F 12 SKMD 42 F 12 SKND42F 12

PH01

Abstract: TUA4401K BY1230 BAR63 BB914 4401K f7108 ONE CHIP FM Bicmos Processes d70 Crystal OSCILLATOR
Contextual Info: Wireless Components FM Car Radio IC with PLL TUA 4401K V 2.1 Specification 17.02.00 DS 1 CONFIDENTIAL Revision History: Current Version: 02.00 Previous Version:Data Sheet 23.09.1999 Page in previous Version Page (in current Version) Subjects (major changes since last revision)

BAR63

Abstract: BB914 PH01 TUA4401K divider by 10 PMQFP-44 BB914 equivalent
Contextual Info: Wireless Components FM Car Radio IC with PLL TUA 4401K V 2.1 Specification 17.02.00 DS 1 Revision History: Current Version: 02.00 Previous Version:Data Sheet 23.09.1999 Page in previous Version Page (in current Version) Subjects (major changes since last revision)

RK 723 007

Abstract: DIODE RK 306 SELECTOR SWITCH ASEA ABG RK 795 001-aa RK741 RK717 CATALOGUE SK 63-1 E ASEA ABG 10 RK795 RK70-10E
Contextual Info: C a ta lo g u e R K 70- 10E Edition 1 5930-09 Su persecTes calatog ues R K 7 M O E RK 74-1OE and R K 7 8 -2 E Relay accessories Pushbuttons Component blocks ASEA T h e re lay accesso ries a re used to provide a relay, protective relay or other equip m en t, with

tea6100

Abstract: VLFM
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TEA6100 FM/IF system and microcomputer-based tuning interface Product specification File under Integrated Circuits, IC01 August 1987 Philips Semiconductors Product specification FM/IF system and microcomputer-based tuning interface

958b

Abstract: AS36 IFR 740 IRGTI120F06
Contextual Info: International ü r ]Rectifier PD-9.958B IRGTI120F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V • Rugged Design • Sim ple gate-drive • Fast operation up to 10 K H z hard switching, or 5 0K H z resonant • Switching-Loss Rating includes all "tail"

m7 smd diodes

Abstract: DG401
Contextual Info: REVISIONS LTR APPROVED DATE YR-MO-DA DESCRIPTION REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 5_ i PMIC N/A fi STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY A LL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A DEFENSE ELECTRONICS SUPPLY CENTER