FM25040 Search Results

Contextual Info: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

1E10

Abstract: FM25040 FM25040-P FM25040-S FM25160 MS-001
Contextual Info: FM25040 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

FM25040A-GA

Abstract: FM25040 FM25040A Q100
Contextual Info: AEC Q100 Grade 1 Compliant FM25040A – Automotive Temp. 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

AN-307

Abstract: FM25040 AN307 FM25040A 25040-s
Contextual Info: AN-307 Differences between FM25040 and FM25040A 4Kb 5V SPI FRAM Devices DESCRIPTION The FM25040 was declared “obsolete” in December 2004, and the alternative device was the FM25040A device. Functionally the two devices are the same. The command set op-codes , the addressing, and the

MC6805 pin diagram

Abstract: "Ferroelectric RAM" ramtron FRAM SCK 055 FM25040 MC6805 MC68HC11
Contextual Info: FM25040 FRAM Serial Memory Product Specification Features Simple Three Wire Bus - SPI Compatible CPOL = 0, CPHA = 0 - 2.1MHz Maximum Clock Rate • Multiple Levels of Write Protection - Hardware Write Protect Pin - Internal Write Enable Latch - Block Protect Bits

Contextual Info: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme

FM25040

Abstract: Ramtron FRAM Serial Memory
Contextual Info: FM25040FRAM Serial Memory F^pM lR O N Product Preview" Features • 4Kbit Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ Low Power CMOS Technology - 10pA Standby Over Industrial Temperature Range - 5pA Standby Over Commercial Temperature Range ■ Reliable Thin Film Ferroelectric Technology

1E10

Abstract: FM25040 FM25040-P FM25040-S FM25160 MS-001
Contextual Info: FM25040 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process

FM25040A-GTR

Abstract: FM25040 FM25040A FM25040A-G FM25040A-S 245C0 lter marking
Contextual Info: FM25040A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM25040

Abstract: FM25040-S FM25160
Contextual Info: FM25040 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced high-reliability ferroelectric process

Contextual Info: Preliminary AEC Q100 Grade 1 Compliant FM25040B – Automotive Temp. 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

fm25040B-GTR

Contextual Info: Preliminary FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

1E10

Abstract: FM25040 FM25040-P FM25040-S FM25160 Ramtron FRAM Serial Memory
Contextual Info: FM25040 R 3M 1R O N 4Kb FRAM Serial Memory Features 4K • • • • • bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High endurance 10 Billion 1010 read/writes 10 year data retention at 55° C No write delay Advanced high-reliability ferroelectric process

AEC-Q100-002

Abstract: FM25040
Contextual Info: Preliminary FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: $ r ^ IM lR O N FM25040FRAM Serial Memory Product Specification Features • 4Kbit Nonvolatile Ferroelectric RAM Organized as 512 x 8 ■ Low Power CMOS Technology - 1OpA Standby Over Industrial Temperature Range - 5pA Standby Over Commercial Temperature Range

FM25040B

Contextual Info: AEC Q100 Grade 1 Compliant FM25040B – Automotive Temp. 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM25040

Abstract: FM25040A FM25040A-G FM25040A-S
Contextual Info: FM25040A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25040 4K b F R A M R3M 1RO N Serial M em ory Features 4K • • • • • bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High endurance 10 Billion 1010 read/writes 10 year data retention at 55° C No write delay Advanced high-reliability ferroelectric process

Contextual Info: FM25040B 4-Kbit 512 x 8 Serial (SPI) Automotive F-RAM 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes

Contextual Info: FM25040B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

Contextual Info: FM25040B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and

FM25040A-GTR

Abstract: FM25040 FM25040A FM25040A-G FM25040A-S
Contextual Info: FM25040A 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM25040C 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme