FMB39M Search Results

fmbg19l

Abstract: SFPB-69 FMB-G19L FMB-29 FMB-29L FMB-39 FMB-39M FME-220A FME-230A MPE-29G
Contextual Info: Schottky Barrier Diodes Package Part Number Surface Mount Axial 90 Frame-2Pin Center-tap Center-tap 100 IFSM A I F (AV) (A) Tj (°C) 50Hz IR (mA) Tstg (°C) VF (V) max IF (A) VR = VRM max Half-cycle Sinewave Single Shot IR (H) (mA) VR = VRM max Ta (°C)

MN638S

Abstract: STA464C sk 3001s relay Re 04501 spf0001 sta509a Schottky Diode 80V 6A 2SD2633 sk 5151s SLA2403M
Contextual Info: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

fmbg19l

Abstract: FMB-39M
Contextual Info: Schottky Barrier Diodes 90V Electrical Characteristics（Ta＝25℃） Absolute Maximum Ratings Parameter VRM （V） Type No. I F（ AV） （A） FMB-G19L IFSM （A） 50Hz Half-cycle Sinewave Single Shot 4.0 5.0 35 50 2.0 3.0 15 4.0 5.0 35 7.5 10.0 50 10.0

CTB24L

Abstract: ctb34m
Contextual Info: 5-5. Schottky Barrier Diodes Surface Mount Type Type No. SFPA-51 VRM IF AV IFSM (V) (A) (A) 10 Tj Tstg (°C) 60 Electrical Characteristics VF (V) IR H•IR Condition (mA) (mA) Fig. = IF Ta = 100°C No. max per max per max per element element element 0.34

FMB-29

Abstract: FMB-29L FMB-39 FMB-39M FMB-G19L FME-220A FME-230A MPE-29G SFPB-59 SFPB-69
Contextual Info: Schottky Barrier Diodes Package Part Number Surface Mount Axial 90 Frame-2Pin Center-tap Center-tap 100 IFSM A I F (AV) (A) Tj (°C) 50Hz IR (mA) IR (H) (mA) Tstg (°C) VF (V) max IF (A) VR = VRM max Half-cycle Sinewave Single Shot VR = VRM max Ta (°C)

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

Contextual Info: Schottky Barrier Diodes Package Part Number I F AV (A) IFSM (A) 50Hz Tj (°C) VF (V) max IF (A) Half-cycle Sinewave Single Shot Surface Mount Surface Mount Center-tap Axial Frame-2Pin VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) Mass (g) 1.0 30 –40 to +150

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)

alternator rectifier diode 50a

Abstract: EL 14v 4c STA509A equivalent sta509a smd diode marking A05 CTB-34M HALL SENSOR A 22L GENERAL SEMICONDUCTOR MARKING mJ SMA ED TRANSISTOR SMD MARKING CODE 12w Zener diode smd marking code 22h
Contextual Info: Bulletin No C01EA0 Jun., 1999 DEVICES for AUTOMOTIVE CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

AK03

Abstract: CTB34M B29L FMB-G24H RBA-406B RK36 FMBG24H rk49
Contextual Info: R SCHOTTK Pi3IODE SCHOTTKY BARRIER DIODES CENTER-TAP TYPE SCHOTTKY BARRIER DIODES Absolute Maximum Ratings (TA=25°C) Type Mo. V rm lo I fsm (V) (A) (A) with Fin SFPB-52 1.0 (V) 30 SFPB-62 20 2.0 SFPB -72 20 3.0 60 RK42 20 3.0 100 FM B-G12L 20 5.0 100 FMB-G22H

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

FMB-G19L

Abstract: EK 110 fmbg19l FMBG24H FMBG14 FMB-29 FMB-29L FMB-G14L FMB-39M FME-230A
Contextual Info: Schottky Barrier Diodes Package Part Number Surface Mount Axial 90 Frame-2Pin Center-tap Center-tap 100 IFSM A I F (AV) (A) Tj (°C) 50Hz IR (mA) IR (H) (mA) Tstg (°C) VF (V) max IF (A) VR = VRM max Half-cycle Sinewave Single Shot VR = VRM max Ta (°C)

FMBG19

Abstract: FMB-29L FMB-G19L FMB-G19 FMB-29 FMB-39 FMB-39M FME-220A FME-230A MPE-29G
Contextual Info: Schottky Barrier Diodes Package Part Number Surface Mount Axial 90 Frame-2Pin Center-tap Center-tap 100 IFSM A I F (AV) (A) Tj (°C) 50Hz IR (mA) IR (H) (mA) Tstg (°C) VF (V) max IF (A) VR = VRM max Half-cycle Sinewave Single Shot VR = VRM max Ta (°C)

FMB-29

Abstract: FMB-29L FMB-39 FMB-39M FMB-G19L fmbg19l
Contextual Info: Schottky Barrier Diodes 90V Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. Tj (°C) IFSM (A) I F (AV) (A) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot FMB-G19L VF (V) IF (A) max per element 5.0 35 3.0 15 Rth ( j-c) Mass

SD MOSFET DRIVE DATASHEET 4468 8 PIN

Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720

FMB36M

Contextual Info: Schottky Barrier Diodes VF V max IF (A) VR = VRM max Half-cycle Sinewave Single Shot Bridge • External Dimensions 0.62 0.7 1 100 20 0.072 82 –40 to +150 0.7 1.5 1 70 150 (Tj) 20 0.072 95 2.0 25 –40 to +150 0.69 2.0 1 15 100 20 0.072 2.0 40 –40 to +150

MPE-220A

Contextual Info: 4-4 Schottky Barrier Diode Standard ●Surface-Mount V RM V 40 60 90 IF (AV) (A) Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (mA) VR=V RM max Ta (°C) Rth(j-l) Rth(j-c) (°C/W)