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    Untitled

    Abstract: No abstract text available
    Text: FMC10N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


    Original
    PDF FMC10N60E

    10N60e

    Abstract: POWER MOSFET P1 smd marking code ms5f6933 mosfet marking code AE on semiconductor marking code dpack Diode SMD SJ 04
    Text: Device Name DATE DRAWN Oct.-19-'07 CHECKED Oct.-19-'07 CHECKED Oct.-19-'07 NAME APPROVED : Type Name : DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,


    Original
    PDF FMI10N60E FMC10N60E MS5F6933 H04-004-05 H04-004-03 10N60e POWER MOSFET P1 smd marking code ms5f6933 mosfet marking code AE on semiconductor marking code dpack Diode SMD SJ 04

    10N60e

    Abstract: fuji D4701 4010-N gcu 101
    Text: Device Name DATE DRAWN Oct.-19-'07 CHECKED Oct.-19-'07 CHECKED Oct.-19-'07 NAME APPROVED : Type Name : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,


    Original
    PDF MS5F6933 FMI10N60E FMC10N60E H04-004-0used H04-004-03 10N60e fuji D4701 4010-N gcu 101

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original
    PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28