FOOTPRINT TRANSISTOR Search Results
FOOTPRINT TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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TTC021 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini |
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FOOTPRINT TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: NXP transistors in LFPAK56 – the true power package for smart efficiency Full power in half the footprint First bipolar transistors in LFPAK/Power-SO8 These high-power bipolar transistors, housed in LFPAK56 Power-SO8 packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable, |
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LFPAK56 AEC-Q101 OT223, com/group/12466 | |
idt 3805
Abstract: PCI express PCB footprint ICS83PR226I-01 TRANSISTOR REPLACEMENT GUIDE PCI x1 express PCB dimensions T6A marking
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ICS83PR226I-01 ICS83PR226I-01 10-VFQFN idt 3805 PCI express PCB footprint TRANSISTOR REPLACEMENT GUIDE PCI x1 express PCB dimensions T6A marking | |
Contextual Info: Programmable FemtoClock LVPECL Oscillator Replacement ICS83PR226I-01 DATA SHEET General Description Features The ICS83PR226I-01 is a programmable LVPECL synthesizer that is “forward” footprint compatible with standard 5mm x 7mm oscillators. Forward footprint compatibility means that a board designed to |
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ICS83PR226I-01 ICS83PR226I-01 10-VFQFN | |
ICS83PR226I-01
Abstract: 10-VFQFN
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ICS83PR226I-01 ICS83PR226I-01 10-VFQFN | |
circuit diagram wireless spy camera
Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
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DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 | |
SFH6315T
Abstract: SFH6316T SFH6343 SFH6343T
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SFH6315T/ SFH6316T/ SFH6343T SFH6315/6 SFH6343) SFH6315T-HCPL0500 SFH6316T-HCPL0501 SFH6343T-HCPL0453 2002/95/EC 2002/96/EC SFH6315T SFH6316T SFH6343 SFH6343T | |
SFH6315T
Abstract: SFH6316T SFH6343 SFH6343T ozone generator circuit 4 kv ac
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SFH6315T/ SFH6316T/ SFH6343T SFH6315/6 SFH6343) SFH6315T-HCPL0500 SFH6316T-HCPL0501 SFH6343T-HCPL0453 2002/95/EC 2002/96/EC SFH6315T SFH6316T SFH6343 SFH6343T ozone generator circuit 4 kv ac | |
2N2907AUBContextual Info: jim»- 2N2907AUB SURFACE MOUNT PNP GENERAL PURPOSE TRANSISTOR 61089 Features OPTOELECTRONIC PRODUCTS DIVISION ORIENTATION KEY Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Footprint and pin-out matches SOT-23 packaged |
OCR Scan |
2N2907AUB OT-23 MIL-S-19500 500mA, VCE-10V, ic-50mA, 100kHz | |
2N2907AUB
Abstract: 2n2907aub optek sot transistor pinout
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2N2907AUB, 2N2907AUBTX, 2N2907AUBTXV OT-23 MIL-PRF-19500/291 2N2907AUBTX 2N2907AUBTXV MIL-PRF-19500/291. 2N2907AUB 2n2907aub optek sot transistor pinout | |
2N2907AUBContextual Info: Surface Mount PNP General Purpose Transistor 2N2907AUB, 2N2907AUBTX, 2N2907AUBTXV Features: • • • • • Ceramic surface mount package Miniature package to minimize circuit board area Hermetically sealed Footprint and pin-out matches SOT-23 packaged transistors |
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2N2907AUB, 2N2907AUBTX, 2N2907AUBTXV OT-23 MIL-PRF-19500/291 2N2907AUBTX 2N2907AUBTXV MIL-PRF-19500/291. 2N2907AUB | |
TPC8004Contextual Info: TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8004 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance |
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TPC8004 TPC8004 | |
TPC8003Contextual Info: TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance |
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TPC8003 TPC8003 | |
TPC8001Contextual Info: TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8001 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance |
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TPC8001 TPC8001 | |
Contextual Info: TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8004 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance |
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TPC8004 32HIBA | |
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Contextual Info: TPC8001 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8001 Lithium Ion Battery Applications Portable Equipment Applications Unit: mm Notebook PC Applications Small footprint due to small and thin package Low drain−source ON resistance |
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TPC8001 | |
tpc8002Contextual Info: TPC8002 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSVI TPC8002 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance |
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TPC8002 tpc8002 | |
Contextual Info: TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U−MOSII TPC8003 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance |
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TPC8003 | |
TPC8009-H
Abstract: TPC8009-H_06
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TPC8009-H TPC8009-H TPC8009-H_06 | |
TPC8017
Abstract: TPC8017-H
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TPC8017-H TPC8017 TPC8017-H | |
Contextual Info: TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSVI TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance |
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TPC8301 | |
Contextual Info: TPCA8006-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type -MOSVII TPCA8006-H Switching Regulator Applications Motor Drive Applications DC DC Converter Applications 6.0±0.3 Small footprint due to a small and thin package • High speed switching |
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TPCA8006-H | |
TPC8212
Abstract: TPC8212-H TPC82
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TPC8212-H TPC8212 TPC8212-H TPC82 | |
3b transistor
Abstract: 3B marking TPC8301
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TPC8301 3b transistor 3B marking TPC8301 | |
M8001Contextual Info: TPCM8001-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCM8001-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications Small footprint due to a small and thin package |
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TPCM8001-H M8001 |