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Catalog Datasheet | Type | Document Tags | |
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BAW76Contextual Info: BAW76 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current |
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BAW76 D-74025 12-Dec-94 BAW76 | |
BAY80Contextual Info: BAY80 Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current |
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BAY80 12-Dec-94 D-74025 BAY80 | |
1N4151Contextual Info: 1N4151 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current |
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1N4151 D-74025 12-Dec-94 1N4151 | |
1N4154
Abstract: telefunken 1n4154
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1N4154 D-74025 12-Dec-94 1N4154 telefunken 1n4154 | |
BAW75Contextual Info: BAW75 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current |
Original |
BAW75 D-74025 12-Dec-94 BAW75 | |
Contextual Info: Photomos / 1A/1B Solid State Relays Model Number Parameters Input Characteristics LED Forward Current - Turn on LED Forward Current - Turn off Recommended Forward Current LED Forward Voltage Sym. LBA110 1A/1B LBA126 1A/1B Max Typ 5.0 2.0 5.0 2.0 mADC Min Typ |
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100mA, LBA110 LBA126 LBA110STR LBA126 LBA126S LBA126STR | |
LBA110
Abstract: LBA126
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LBA110 LBA126 100mA, LBA110 LBA126 | |
G2-1A07
Abstract: 1a05 relay G2-1A06 1A07 1a05 G2-1A05 G2-1A02 G2-1A03 1A13
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G2-1A02 G2-1A03 G2-1A05 G2-1A06 G2-1A07 G2-1A13 100mA, 1a05 relay 1A07 1a05 1A13 | |
G2-1A13
Abstract: 1a03 ac G2-1A13-TT G21A02ST G2-1A02st G2-1A05 g2-1a33 1a06
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G2-1A02 G2-1A03 G2-1A05 G2-1A06 G2-1A07 G2-1A13 100mA, G2-1A02-SR G2-1A02-ST G2-1A02-TT G2-1A13 1a03 ac G2-1A13-TT G21A02ST G2-1A02st g2-1a33 1a06 | |
G2-AB01
Abstract: G2-AB02
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G2-AB01 G2-AB02 100mA, G2-AB01 G2-AB02 | |
1B MOSFET
Abstract: G2-AB01 G2-AB02
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G2-AB01 G2-AB02 100mA, 1B MOSFET G2-AB01 G2-AB02 | |
BA604Contextual Info: BA604 TELEFUNKEN Semiconductors Silicon Planar Diode Applications General purpose 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Forward current |
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BA604 50mmx5in D-74025 BA604 | |
LS485SContextual Info: LS485S Vishay Telefunken Silicon Epitaxial Planar Diodes Applications General purposes 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage Reverse voltage Forward current Forward peak current Peak forward surge current Junction temperature |
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LS485S 100mA 50mmx50mmx1 D-74025 09-Apr-99 LS485S | |
BAY80Contextual Info: BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current |
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BAY80 01-Apr-99 D-74025 BAY80 | |
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Contextual Info: 6A05G THRU FORWARD INTERNATIONAL ELECTRONICS LUX SEMICONDUCTOR TECHNICAL DATA 6A10G TECHNICAL SPECIFICATIONS O F GLASS PASSIVATED RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT-6.0Amperes FEATURES ' ' ‘ * Low cost Low leakage Low forward voltage drop |
OCR Scan |
6A05G 6A10G MIL-STD-202E, | |
Telefunken
Abstract: 9154 1N4154 telefunken 1n4154
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1N4154 01-Apr-99 D-74025 Telefunken 9154 1N4154 telefunken 1n4154 | |
BA604Contextual Info: BA604 Vishay Telefunken Silicon Planar Diode Applications General purpose 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Power dissipation |
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BA604 01-Apr-99 50mmx50mmx1 D-74025 BA604 | |
BAW76Contextual Info: BAW76 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current |
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BAW76 01-Apr-99 D-74025 BAW76 | |
BAW75Contextual Info: BAW75 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current |
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BAW75 01-Apr-99 D-74025 BAW75 | |
BAV17
Abstract: BAV18 BAV19 BAV20 BAV21
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BAV17. BAV21 BAV17 BAV18 BAV19 BAV20 BAV17 BAV18 BAV19 BAV20 BAV21 | |
1N5321
Abstract: 1N5B22
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OCR Scan |
1N5820 1N5822 DO-27 5820TH 1N5321 1N5B22 | |
BA604Contextual Info: BA604 Silicon Planar Diode Applications General purpose 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Power dissipation Junction temperature |
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BA604 24-Jun-96 50mmx50mmx1the D-74025 BA604 | |
TR152Contextual Info: FR151 THRU FORWARD INTERNATIONAL ELECTRONICS L ID . SEMICONDUCTOR TECHNICAL DATA FR157 TECHNICAL SPECIFICATIONS OF FAST RECOVERY RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.5 Amperes FEATURES * Fast switching * Low leakage T Low forward voltage drop |
OCR Scan |
FR151 FR157 DO-15 MIL-STD-202E, FR151 TR152 | |
BAV17
Abstract: BAV18 BAV19 BAV20 BAV21
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BAV17. BAV21 BAV17 BAV18 BAV19 BAV20 BAV17 BAV18 BAV19 BAV20 BAV21 |