FP118 Search Results

FP11G

Abstract: FP1189-G
Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET

RF transistors with s-parameters

Abstract: high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900
Contextual Info: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package

FP1189-G

Abstract: FP11G FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S marking c7 sot-89
Contextual Info: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package

FP11G

Abstract: TRANSISTOR BC 158 pnp WJ transistor bc 206 transistor bc 3843
Contextual Info: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET

power supply 1000 watt

Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Advanced Product Information Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTTF >100 Years Product Description

MARKING S0 sot89

Abstract: bc 3843 sot-89 marking dn
Contextual Info: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram

high power FET transistor s-parameters

Abstract: FP1189 FP1189-PCB-1900 FP1189-PCB-900
Contextual Info: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • DC – 4000 MHz • +28 dBm P1dB • +40 dBm Output IP3 • High Drain Efficiency • 17 dB Gain @ 1900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description

Contextual Info: PRODUCT DATASHEET Lisa2 series last update 16/10/2013 DETAILS Ordering Number FP11860_LISA2-O-90-CLIP Family Lisa2 Type Assembly Color black Diameter 9.9 mm Height 6.5 mm Style round Optic Material PMMA Holder Material PC Fastening clips, glue Status ready

Contextual Info: PRODUCT DATASHEET Lisa2 series last update 22/10/2012 DETAILS Ordering Number FP11853_LISA2-O-90-PIN Family Lisa2 Type Assembly Color black Diameter 9.9 mm Height 6.6 mm Style round Optic Material PMMA Holder Material PC Fastening pin, glue Status ready ROHS Comliant

FP1189

Abstract: 8893 application diagram
Contextual Info: FP1189 ½ - Watt HFET Product Information Product Features • • • • • • • • Product Description 50 – 4000 MHz ISO & EPC compliant +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package

Contextual Info: PRODUCT DATASHEET Lisa2 series last update 12/11/2012 DETAILS Ordering Number FP11851_LISA2-O-90-PIN Family Lisa2 Type Assembly Color black Diameter 9.9 mm Height 6.8 mm Style round Optic Material PMMA Holder Material PC Fastening pin, glue Status ready ROHS Comliant

Contextual Info: PRODUCT DATASHEET Lisa2 series last update 22/10/2012 DETAILS Ordering Number FP11858_LISA2-O-90-CLIP Family Lisa2 Type Assembly Color black Diameter 9.9 mm Height 6.6 mm Style round Optic Material PMMA Holder Material PC Fastening clips, glue Status ready

WJ transistor

Abstract: FP2189 THEORY FP1189 FP31QF two transistors matched transistors
Contextual Info: Application Note The Communications Edge TM Active-Bias Constant-Current Source Recommended for WJ HFET devices An optional active-bias current mirror is recommended for use with the application circuits shown in WJ’s FP1189 and FP2189 datasheets. All WJ HFET’s require a negative gate voltage with a positive drain voltage.

"line AMPLIFIER"

Abstract: FP1189 100C1000 N2 4401
Contextual Info: Application Note FP1189 CATV Push-pull Reference Design Summary The WJ FP1189 can be used in a push-pull configuration to produce 12 dB of flat-gain and excellent performance for CATV applications while only drawing a total of 200 mA of current. The supply voltage can be set at any voltage between 6 and 12V. The high OIP2 and OIP3

RF transistors with s-parameters

Abstract: 2.5 GHz RF power transistors with s-parameters 400 watt circuit diagram 51Z4 high power FET transistor s-parameters WJ transistor
Contextual Info: FP1189 The Communications Edge TM Advanced Datasheet ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package Product Description

FP11G

Abstract: 113 marking code transistor ROHM FP1189 FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S
Contextual Info: FP1189 ½ - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain

Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET

RFID ID-20

Abstract: 113 marking code transistor ROHM HFET sot-89 MARKING CODE ab FP1189-PCB2140S FP1189-PCB900S JESD22-A114 FP1189 FP1189-PCB1900S 25c021
Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm

Contextual Info: PRODUCT DATASHEET Lisa2 series last update 16/10/2013 DETAILS Ordering Number FP11857_LISA2-O-90-CLIP Family Lisa2 Type Assembly Color black Diameter 9.9 mm Height 6.6 mm Style round Optic Material PMMA Holder Material PC Fastening clips, glue Status ready

Contextual Info: PRODUCT DATASHEET Lisa2 series last update 31/7/2013 DETAILS Ordering Number FP11856_LISA2-O-90-CLIP Family Lisa2 Type Assembly Color black Diameter 9.9 mm Height 6.8 mm Style round Optic Material PMMA Holder Material PC Fastening clips, glue Status ready

Contextual Info: PRODUCT DATASHEET Lisa2 series last update 16/10/2013 DETAILS Ordering Number FP11852_LISA2-O-90-PIN Family Lisa2 Type Assembly Color black Diameter 9.9 mm Height 6.6 mm Style round Optic Material PMMA Holder Material PC Fastening pin, glue Status ready ROHS Comliant

RFID ID-20

Abstract: marking c7 sot-89 113 marking code transistor ROHM FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S JESD22-A114 30ACPR ohm resistor 1 W 100 ROhm
Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm

FP11G

Abstract: fp1189-g rfid reader id-20 FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S TRANSISTOR BC 206 PNP
Contextual Info: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET

marking 08 sot89

Abstract: SOT89 MARKING CODE 8G
Contextual Info: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram